页 82 - STMicroelectronics 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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STMicroelectronics 产品 - 晶体管 - FET,MOSFET - 单

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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot STL16N1VH5
STMicroelectronics

MOSFET N-CH 12V 16A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 500mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 12V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存11,472
MOSFET (Metal Oxide)
12V
16A (Tc)
2.5V, 4.5V
500mV @ 250µA
26.5nC @ 4.5V
2085pF @ 12V
±8V
-
2W (Ta), 50W (Tc)
3 mOhm @ 8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
hot STL35N6F3
STMicroelectronics

MOSFET N-CH 60V 44A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存360,000
MOSFET (Metal Oxide)
60V
35A (Tc)
10V
4V @ 250µA
-
-
±20V
-
5W (Ta), 80W (Tc)
22 mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot STP20NM65N
STMicroelectronics

MOSFET N-CH 650V 15A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,152
MOSFET (Metal Oxide)
650V
15A (Tc)
10V
4V @ 250µA
44nC @ 10V
1280pF @ 50V
±25V
-
125W (Tc)
270 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STF20NM65N
STMicroelectronics

MOSFET N-CH 650V 15A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存13,788
MOSFET (Metal Oxide)
650V
15A (Tc)
10V
4V @ 250µA
44nC @ 10V
1280pF @ 50V
±25V
-
30W (Tc)
270 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STF11N52K3
STMicroelectronics

MOSFET N-CH 525V 10A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存2,512
MOSFET (Metal Oxide)
525V
10A (Tc)
10V
4.5V @ 50µA
51nC @ 10V
1400pF @ 50V
±30V
-
30W (Tc)
510 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STD150N2LH5
STMicroelectronics

MOSFET N-CH DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,008
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STB16NF25
STMicroelectronics

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,024
MOSFET (Metal Oxide)
30V
14.5A (Tc)
-
2.5V @ 250µA
40nC @ 4.5V
4490pF @ 12V
-
-
-
4 mOhm @ 30A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STP5NK65Z
STMicroelectronics

MOSFET N-CH 650V 5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,552
MOSFET (Metal Oxide)
650V
5A (Tc)
10V
4.5V @ 50µA
35nC @ 10V
680pF @ 25V
±30V
-
85W (Tc)
1.8 Ohm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STF3LN62K3
STMicroelectronics

MOSFET N-CH 620V 2.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存72,024
MOSFET (Metal Oxide)
620V
2.5A (Tc)
10V
4.5V @ 50µA
17nC @ 10V
386pF @ 50V
±30V
-
20W (Tc)
3 Ohm @ 1.25A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STU8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存37,188
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
5V @ 250µA
15nC @ 10V
690pF @ 100V
±25V
-
70W (Tc)
600 mOhm @ 3.5A, 10V
150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot STP7NM60N
STMicroelectronics

MOSFET N-CH 600V 5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存6,096
MOSFET (Metal Oxide)
600V
5A (Tc)
10V
4V @ 250µA
14nC @ 10V
363pF @ 50V
±25V
-
45W (Tc)
900 mOhm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STI8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存11,556
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
5V @ 250µA
15nC @ 10V
690pF @ 100V
±25V
-
70W (Tc)
600 mOhm @ 3.5A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
STI12N65M5
STMicroelectronics

MOSFET N-CH 650V 8.5A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存2,416
MOSFET (Metal Oxide)
650V
8.5A (Tc)
10V
5V @ 250µA
22nC @ 10V
900pF @ 100V
±25V
-
70W (Tc)
430 mOhm @ 4.3A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot STH210N75F6-2
STMicroelectronics

MOSFET N-CH 75V 180A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
封装: TO-263-3, D2Pak (2 Leads + Tab) Variant
库存10,200
MOSFET (Metal Oxide)
75V
180A (Tc)
10V
4V @ 250µA
171nC @ 10V
11800pF @ 25V
±20V
-
300W (Tc)
2.8 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-3, D2Pak (2 Leads + Tab) Variant
STP3LN62K3
STMicroelectronics

MOSFET N-CH 620V 2.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,216
MOSFET (Metal Oxide)
620V
2.5A (Tc)
10V
4.5V @ 50µA
17nC @ 10V
386pF @ 50V
±30V
-
45W (Tc)
3 Ohm @ 1.25A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STL75N3LLZH5
STMicroelectronics

MOSFET N-CH 30V 75A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存5,712
MOSFET (Metal Oxide)
30V
75A (Tc)
4.5V, 10V
1V @ 250µA
11.8nC @ 4.5V
1510pF @ 25V
±18V
-
60W (Tc)
6.1 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
STL100N1VH5
STMicroelectronics

MOSFET N-CH 12V 100A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存4,720
MOSFET (Metal Oxide)
12V
100A (Tc)
2.5V, 4.5V
500mV @ 250µA (Min)
26.5nC @ 4.5V
2085pF @ 10V
±8V
-
60W (Tc)
3 mOhm @ 12.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
STB6N52K3
STMicroelectronics

MOSFET N-CH 525V 5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,208
MOSFET (Metal Oxide)
525V
5A (Tc)
10V
4.5V @ 50µA
26nC @ 10V
670pF @ 50V
±30V
-
70W (Tc)
1.2 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STL80N3LLH6
STMicroelectronics

MOSFET N-CH 30V 21A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存9,564
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
1V @ 250µA
17nC @ 4.5V
1690pF @ 25V
±20V
-
60W (Tc)
5.2 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot STB5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,240
MOSFET (Metal Oxide)
525V
4.4A (Tc)
10V
4.5V @ 50µA
17nC @ 10V
545pF @ 100V
±30V
-
70W (Tc)
1.5 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STF11N65K3
STMicroelectronics

MOSFET N-CH 650V 11.0A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存7,392
MOSFET (Metal Oxide)
650V
11A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1180pF @ 50V
±30V
-
35W (Tc)
850 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STL7NM60N
STMicroelectronics

MOSFET N-CH 600V 5.8A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-PowerFLAT? (5x5)
  • Package / Case: 14-PowerVQFN
封装: 14-PowerVQFN
库存4,560
MOSFET (Metal Oxide)
600V
5.8A (Tc)
10V
4V @ 250µA
14nC @ 10V
363pF @ 50V
±25V
-
68W (Tc)
900 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
14-PowerFLAT? (5x5)
14-PowerVQFN
hot STD35N3LH5
STMicroelectronics

MOSFET N-CH 30V 35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存630,048
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
6nC @ 4.5V
725pF @ 25V
±20V
-
35W (Tc)
16 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STD10NM50N
STMicroelectronics

MOSFET N-CH 500V 7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存82,560
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
4V @ 250µA
17nC @ 10V
450pF @ 50V
±25V
-
70W (Tc)
630 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STB5N62K3
STMicroelectronics

MOSFET N-CH 620V 4.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,680
MOSFET (Metal Oxide)
620V
4.2A (Tc)
10V
4.5V @ 50µA
26nC @ 10V
680pF @ 50V
±30V
-
70W (Tc)
1.6 Ohm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STW16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 279 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存43,200
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
5V @ 250µA
31nC @ 10V
1250pF @ 100V
±25V
-
90W (Tc)
279 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STL17N3LLH6
STMicroelectronics

MOSFET N-CH 30V 17A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存146,928
MOSFET (Metal Oxide)
30V
17A (Tc)
4.5V, 10V
1V @ 250µA
17nC @ 4.5V
1690pF @ 25V
±20V
-
2W (Ta), 50W (Tc)
4.5 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
hot STP8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存821,088
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
5V @ 250µA
15nC @ 10V
690pF @ 100V
±25V
-
70W (Tc)
600 mOhm @ 3.5A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot STL52N25M5
STMicroelectronics

MOSFET N-CH 250V 28A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存6,640
MOSFET (Metal Oxide)
250V
28A (Tc)
10V
5V @ 100µA
47nC @ 10V
1770pF @ 50V
±25V
-
2.5W (Ta), 110W (Tc)
65 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot STP10NM50N
STMicroelectronics

MOSFET N-CH 500V 7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存780,000
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
4V @ 250µA
17nC @ 10V
450pF @ 50V
±25V
-
70W (Tc)
630 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3