页 9 - Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

记录 1,247
页  9/42
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封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RF4C100BCTCR
Rohm Semiconductor

MOSFET P-CH 20V 10A HUML2020L8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 8-PowerUDFN
封装: -
库存8,502
MOSFET (Metal Oxide)
20 V
10A (Ta)
1.8V, 4.5V
1.2V @ 1mA
23.5 nC @ 4.5 V
1660 pF @ 10 V
±8V
-
2W (Ta)
15.6mOhm @ 10A, 4.5V
150°C (TJ)
Surface Mount
HUML2020L8
8-PowerUDFN
R6055VNZC17
Rohm Semiconductor

600V 23A TO-3PF, PRESTOMOS WITH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
库存1,260
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V, 15V
6.5V @ 1.5mA
80 nC @ 10 V
3700 pF @ 100 V
±30V
-
99W (Tc)
71mOhm @ 16A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RD3L03BBGTL1
Rohm Semiconductor

NCH 60V 50A, TO-252, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存6,324
MOSFET (Metal Oxide)
60 V
35A (Tc)
4.5V, 10V
2.5V @ 1mA
14 nC @ 10 V
970 pF @ 30 V
±20V
-
50W (Tc)
11.3mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R8009KNXC7G
Rohm Semiconductor

HIGH-SPEED SWITCHING NCH 800V 9A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存5,613
MOSFET (Metal Oxide)
800 V
9A (Ta)
10V
4.5V @ 5mA
27 nC @ 10 V
900 pF @ 100 V
±20V
-
59W (Tc)
600mOhm @ 4.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RF4P060BGTCR
Rohm Semiconductor

NCH 100V 6A, HUML2020L8, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020-8S
  • Package / Case: 8-PowerUDFN
封装: -
库存9,000
MOSFET (Metal Oxide)
100 V
6A (Ta)
4.5V, 10V
2.5V @ 1mA
6.7 nC @ 10 V
305 pF @ 50 V
±20V
-
2W (Ta)
53mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
DFN2020-8S
8-PowerUDFN
R6007KNXC7G
Rohm Semiconductor

600V 7A TO-220FM, HIGH-SPEED SWI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,910
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
5V @ 1mA
14.5 nC @ 10 V
470 pF @ 25 V
±20V
-
46W (Tc)
620mOhm @ 2.4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6025JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 25A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 4.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存5,913
MOSFET (Metal Oxide)
600 V
25A (Tc)
15V
7V @ 4.5mA
57 nC @ 15 V
1900 pF @ 100 V
±30V
-
85W (Tc)
182mOhm @ 12.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3H200SNFRATL
Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存5,211
MOSFET (Metal Oxide)
45 V
20A (Ta)
4V, 10V
2.5V @ 1mA
12 nC @ 5 V
950 pF @ 10 V
±20V
-
20W (Tc)
28mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6022YNZ4C13
Rohm Semiconductor

NCH 600V 22A, TO-247, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,800
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V, 12V
6V @ 1.8mA
33 nC @ 10 V
1400 pF @ 100 V
±30V
-
205W (Tc)
165mOhm @ 6.5A, 12V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
SCT3120ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 21A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 103W
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
封装: -
库存6,750
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
5.6V @ 3.33mA
38 nC @ 18 V
460 pF @ 500 V
+22V, -4V
-
103W
156mOhm @ 6.7A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RF6G035BGTCR
Rohm Semiconductor

NCH 40V 3.5A, TUMT6, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
3.5 nC @ 10 V
150 pF @ 20 V
±20V
-
910mW (Ta)
46mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
R8019KNXC7G
Rohm Semiconductor

800V 19A, TO-220FM, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
19A (Tc)
10V
4.5V @ 7mA
65 nC @ 10 V
2100 pF @ 100 V
±20V
-
83W (Tc)
265mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
SCT3080KRC15
Rohm Semiconductor

1200V, 31A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
库存1,095
SiC (Silicon Carbide Junction Transistor)
1200 V
31A (Tj)
18V
5.6V @ 5mA
60 nC @ 18 V
785 pF @ 800 V
+22V, -4V
-
165W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT3080KRC14
Rohm Semiconductor

SICFET N-CH 1200V 31A TO247-4L

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
库存1,620
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
18V
5.6V @ 5mA
60 nC @ 18 V
785 pF @ 800 V
+22V, -4V
-
165W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
R6535KNZ4C13
Rohm Semiconductor

650V 35A TO-247, HIGH-SPEED SWIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,068
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
5V @ 1.21mA
72 nC @ 10 V
3000 pF @ 25 V
±20V
-
379W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
RD3L150SNFRATL
Rohm Semiconductor

MOSFET N-CH 60V 15A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存6,975
MOSFET (Metal Oxide)
60 V
15A (Ta)
4V, 10V
3V @ 1mA
18 nC @ 10 V
930 pF @ 10 V
±20V
-
20W (Tc)
40mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RTF016N05FRATL
Rohm Semiconductor

MOSFET N-CH 45V 1.6A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
封装: -
库存36,567
MOSFET (Metal Oxide)
45 V
1.6A (Ta)
-
1.5V @ 1mA
2.3 nC @ 4.5 V
150 pF @ 10 V
±12V
-
800mW
190mOhm @ 1.6A, 4.5V
150°C
Surface Mount
TUMT3
3-SMD, Flat Leads
R6535ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 35A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
4V @ 1.21mA
110 nC @ 10 V
2600 pF @ 25 V
±20V
-
102W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RX3G07BBGC16
Rohm Semiconductor

NCH 40V 70A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存2,922
MOSFET (Metal Oxide)
40 V
70A (Tc)
4.5V, 10V
2.5V @ 1mA
56 nC @ 10 V
3540 pF @ 20 V
±20V
-
89W (Tc)
3mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6511ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 11A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 124W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存270
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4V @ 320µA
32 nC @ 10 V
670 pF @ 25 V
±20V
-
124W (Tc)
400mOhm @ 3.8A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6086YNZ4C13
Rohm Semiconductor

NCH 600V 86A, TO-247, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 4.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 781W (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,704
MOSFET (Metal Oxide)
600 V
86A (Tc)
10V, 12V
6V @ 4.6mA
110 nC @ 10 V
5100 pF @ 100 V
±30V
-
781W (Tc)
44mOhm @ 17A, 12V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
SCT4018KRC15
Rohm Semiconductor

1200V, 18M, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 312W
  • Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
库存14,571
SiCFET (Silicon Carbide)
1200 V
81A (Tc)
18V
4.8V @ 22.2mA
170 nC @ 18 V
4532 pF @ 800 V
+21V, -4V
-
312W
23.4mOhm @ 42A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT4062KW7HRTL
Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 93W
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
库存2,940
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
4.8V @ 6.45mA
64 nC @ 18 V
1498 pF @ 800 V
+21V, -4V
-
93W
81mOhm @ 12A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RV2E014AJT2CL
Rohm Semiconductor

NCH 30V 1.4A, DFN1006-3, SMALL S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: 3-XFDFN
封装: -
库存23,970
MOSFET (Metal Oxide)
30 V
700mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
105 pF @ 15 V
±12V
-
400mW (Ta)
290mOhm @ 1.4A, 4.5V
150°C (TJ)
Surface Mount
DFN1006-3
3-XFDFN
RD3U080CNTL1
Rohm Semiconductor

MOSFET N-CH 250V 8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存29,934
MOSFET (Metal Oxide)
250 V
8A (Tc)
10V
5V @ 1mA
25 nC @ 10 V
1440 pF @ 25 V
±30V
-
85W (Tc)
300mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3G03BATTL1
Rohm Semiconductor

PCH -40V -35A POWER MOSFET - RD3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存13,857
MOSFET (Metal Oxide)
40 V
35A (Tc)
4.5V, 10V
2.5V @ 1mA
38 nC @ 10 V
2100 pF @ 20 V
±20V
-
56W (Tc)
19.1mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RSS070N05FRATB
Rohm Semiconductor

MOSFET N-CH 45V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
16.8 nC @ 5 V
1000 pF @ 10 V
±20V
-
2W (Ta)
25mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJ1P04BBHTL1
Rohm Semiconductor

NCH 100V 40A, TO-263AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存2,388
MOSFET (Metal Oxide)
100 V
40A (Tc)
6V, 10V
4V @ 1mA
38 nC @ 10 V
2410 pF @ 50 V
±20V
-
89W (Tc)
8.8mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6015ANZFU7C8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.15V @ 1mA
50 nC @ 10 V
1700 pF @ 25 V
±30V
-
110W (Tc)
300mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6020JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 20A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存5,790
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
76W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack