页 21 - Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

RSF015N06FRATL

Rohm Semiconductor

MOSFET N-CH 60V 1.5A TUMT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TUMT3
Package / Case: 3-SMD, Flat Leads

封装: -

库存21,588

MOSFET (Metal Oxide)

60 V

1.5A (Ta)

4V, 10V

2.5V @ 1mA

2 nC @ 5 V

110 pF @ 10 V

±20V

-

800mW (Ta)

290mOhm @ 1.5A, 10V

150°C

Surface Mount

TUMT3

3-SMD, Flat Leads

RQ5A020ZPTL

Rohm Semiconductor

MOSFET P-CH 12V 2A TSMT3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

封装: -

库存6,750

MOSFET (Metal Oxide)

12 V

2A (Ta)

1.5V, 4.5V

1V @ 1mA

6.5 nC @ 4.5 V

770 pF @ 6 V

±10V

-

700mW (Ta)

105mOhm @ 2A, 4.5V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RD3P130SPTL1

Rohm Semiconductor

MOSFET P-CH 100V 13A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存13,248

MOSFET (Metal Oxide)

100 V

13A (Ta)

4V, 10V

2.5V @ 1mA

40 nC @ 10 V

2400 pF @ 25 V

±20V

-

20W (Tc)

200mOhm @ 6.5A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

R6576ENZ4C13

Rohm Semiconductor

650V 76A TO-247, LOW-NOISE POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: -

库存1,686

MOSFET (Metal Oxide)

650 V

76A (Ta)

10V

4V @ 2.96mA

260 nC @ 10 V

6500 pF @ 25 V

±20V

-

735W (Tc)

46mOhm @ 44.4A, 10V

150°C (TJ)

Through Hole

TO-247

TO-247-3

RSQ045N03HZGTR

Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: -

库存42

MOSFET (Metal Oxide)

30 V

4.5A (Ta)

4V, 10V

2.5V @ 1mA

9.5 nC @ 5 V

520 pF @ 10 V

±20V

-

950mW (Ta)

38mOhm @ 4.5A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

R6515ENZC17

Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 430µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

15A (Tc)

10V

4V @ 430µA

40 nC @ 10 V

910 pF @ 25 V

±20V

-

60W (Tc)

315mOhm @ 6.5A, 10V

150°C (TJ)

Through Hole

TO-3PF

TO-3P-3 Full Pack

RS6R035BHTB1

Rohm Semiconductor

NCH 150V 35A, HSOP8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSOP
Package / Case: 8-PowerTDFN

封装: -

库存7,362

MOSFET (Metal Oxide)

150 V

35A (Tc)

6V, 10V

4V @ 1mA

25 nC @ 10 V

1470 pF @ 75 V

±20V

-

3W (Ta), 73W (Tc)

41mOhm @ 35A, 10V

150°C (TJ)

Surface Mount

8-HSOP

8-PowerTDFN

R6077VNZC17

Rohm Semiconductor

600V 29A TO-3PF, PRESTOMOS WITH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

封装: -

库存1,260

MOSFET (Metal Oxide)

600 V

29A (Tc)

10V, 15V

6.5V @ 1.9mA

108 nC @ 10 V

5200 pF @ 100 V

±30V

-

113W (Tc)

51mOhm @ 23A, 15V

150°C (TJ)

Through Hole

TO-3PF

TO-3P-3 Full Pack

R6530KNZC17

Rohm Semiconductor

MOSFET N-CH 650V 30A TO3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

封装: -

库存900

MOSFET (Metal Oxide)

650 V

30A (Tc)

10V

5V @ 960µA

56 nC @ 10 V

2350 pF @ 25 V

±20V

-

86W (Tc)

140mOhm @ 14.5A, 10V

150°C (TJ)

Through Hole

TO-3PF

TO-3P-3 Full Pack

R6050JNZ4C13

Rohm Semiconductor

MOSFET N-CH 600V 50A TO247G

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 615W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247G
Package / Case: TO-247-3

封装: -

库存1,635

MOSFET (Metal Oxide)

600 V

50A (Tc)

15V

7V @ 5mA

120 nC @ 15 V

4500 pF @ 100 V

±30V

-

615W (Tc)

83mOhm @ 25A, 15V

150°C (TJ)

Through Hole

TO-247G

TO-247-3

RS6G120BGTB1

Rohm Semiconductor

NCH 40V 210A, HSOP8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSOP
Package / Case: 8-PowerTDFN

封装: -

库存6,282

MOSFET (Metal Oxide)

40 V

120A (Tc)

4.5V, 10V

2.5V @ 1mA

67 nC @ 10 V

4240 pF @ 20 V

±20V

-

104W (Tc)

1.34mOhm @ 90A, 10V

150°C (TJ)

Surface Mount

8-HSOP

8-PowerTDFN

RD3U080AAFRATL

Rohm Semiconductor

250V 8A TO-252, AUTOMOTIVE POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存14,727

MOSFET (Metal Oxide)

250 V

8A (Tc)

10V

5V @ 1mA

25 nC @ 10 V

1440 pF @ 25 V

±30V

-

85W (Tc)

300mOhm @ 4A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RSR025P03HZGTL

Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

封装: -

库存33,390

MOSFET (Metal Oxide)

30 V

2.5A (Ta)

4V, 10V

2.5V @ 1mA

5.4 nC @ 5 V

460 pF @ 10 V

±20V

-

700mW (Ta)

98mOhm @ 2.5A, 10V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RD3H045SPFRATL

Rohm Semiconductor

MOSFET P-CH 45V 4.5A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存7,158

MOSFET (Metal Oxide)

45 V

4.5A (Ta)

4V, 10V

3V @ 1mA

12 nC @ 5 V

550 pF @ 10 V

±20V

-

15W (Tc)

155mOhm @ 4.5A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RSL020P03FRATR

Rohm Semiconductor

MOSFET P-CH 30V 2A TUMT6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads

封装: -

库存40,401

MOSFET (Metal Oxide)

30 V

2A (Ta)

10V

2.5V @ 1mA

3.9 nC @ 5 V

350 pF @ 10 V

±20V

-

1W (Ta)

120mOhm @ 2A, 10V

150°C

Surface Mount

TUMT6

6-SMD, Flat Leads

R6020ANZ8U7C8

Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

4.15V @ 1mA

65 nC @ 10 V

2040 pF @ 25 V

±30V

-

120W (Tc)

220mOhm @ 10A, 10V

150°C

Through Hole

TO-3PF

TO-3P-3 Full Pack

R6520ENXC7G

Rohm Semiconductor

650V 20A TO-220FM, LOW-NOISE POW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

封装: -

库存2,907

MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4V @ 630µA

61 nC @ 10 V

1400 pF @ 25 V

±20V

-

68W (Tc)

205mOhm @ 9.5A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

RQ5E020SPTL

Rohm Semiconductor

MOSFET P-CH 30V 2A TSMT3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

封装: -

库存8,055

MOSFET (Metal Oxide)

30 V

2A (Ta)

4V, 10V

2.5V @ 1mA

4.3 nC @ 5 V

370 pF @ 10 V

±20V

-

700mW (Ta)

120mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RQ6G050ATTCR

Rohm Semiconductor

PCH -30V -5A POWER MOSFET - RQ6G

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: -

库存70,098

MOSFET (Metal Oxide)

40 V

5A (Ta)

4.5V, 10V

2.5V @ 1mA

22 nC @ 10 V

1100 pF @ 20 V

±20V

-

950mW (Ta)

40mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

R6000ENHTB1

Rohm Semiconductor

600V 0.5A, SOP8, LOW-NOISE POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 200mA, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

库存6,555

MOSFET (Metal Oxide)

600 V

500mA (Ta)

10V

5V @ 1mA

4.3 nC @ 10 V

45 pF @ 25 V

±20V

-

2W (Ta)

8.8Ohm @ 200mA, 10V

150°C

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

RQ6E035SPTR

Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: -

库存8,118

MOSFET (Metal Oxide)

30 V

3.5A (Ta)

4V, 10V

2.5V @ 1mA

9.2 nC @ 5 V

780 pF @ 10 V

±20V

-

950mW (Ta)

65mOhm @ 3.5A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

SCT4013DEC11

Rohm Semiconductor

750V, 105A, 3-PIN THD, TRENCH-ST

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 312W
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3

封装: -

库存1,251

SiCFET (Silicon Carbide)

750 V

105A (Tj)

18V

4.8V @ 30.8mA

170 nC @ 18 V

4580 pF @ 500 V

+21V, -4V

-

312W

16.9mOhm @ 58A, 18V

175°C (TJ)

Through Hole

TO-247N

TO-247-3

RH6P040BHTB1

Rohm Semiconductor

NCH 100V 40A, HSMT8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 59W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 40A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

封装: -

库存16,380

MOSFET (Metal Oxide)

100 V

40A (Tc)

6V, 10V

4V @ 1mA

16.7 nC @ 10 V

1080 pF @ 50 V

±20V

-

59W (Tc)

15.6mOhm @ 40A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

R6004ENXC7G

Rohm Semiconductor

600V 4A TO-220FM, LOW-NOISE POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

封装: -

库存2,460

MOSFET (Metal Oxide)

600 V

4A (Tc)

10V

4V @ 1mA

15 nC @ 10 V

250 pF @ 25 V

±20V

-

40W (Tc)

980mOhm @ 1.5A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

R6006KND3TL1

Rohm Semiconductor

MOSFET N-CH 600V 6A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存7,989

MOSFET (Metal Oxide)

600 V

6A (Tc)

10V

5.5V @ 1mA

12 nC @ 10 V

350 pF @ 25 V

±20V

-

70W (Tc)

830mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RQ7L050ATTCR

Rohm Semiconductor

PCH -60V -5A SMALL SIGNAL POWER

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

封装: -

库存6,255

MOSFET (Metal Oxide)

60 V

5A (Ta)

4.5V, 10V

2.5V @ 1mA

38 nC @ 10 V

2160 pF @ 30 V

±20V

-

1.1W (Ta)

39mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

TSMT8

8-SMD, Flat Lead

LSS050P03FP8TB1

Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

RTL035N03FRATR

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TUMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads

封装: -

库存34,098

MOSFET (Metal Oxide)

30 V

3.5A (Ta)

2.5V, 4.5V

1.5V @ 1mA

6.4 nC @ 4.5 V

350 pF @ 10 V

-

1W (Ta)

56mOhm @ 3.5A, 4.5V

150°C

Surface Mount

TUMT6

6-SMD, Flat Leads

RF4G060ATTCR

Rohm Semiconductor

PCH -40V -6A POWER, DFN2020, MOS

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: HUML2020L8
Package / Case: 6-PowerUDFN

封装: -

库存8,898

MOSFET (Metal Oxide)

40 V

6A (Ta)

4.5V, 10V

2.5V @ 1mA

17.2 nC @ 10 V

880 pF @ 20 V

±20V

-

2W (Ta)

40mOhm @ 6A, 10V

150°C (TJ)

Surface Mount

HUML2020L8

6-PowerUDFN

SCT4045DW7HRTL

Rohm Semiconductor

750V, 31A, 7-PIN SMD, TRENCH-STR

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 93W
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7L
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

库存2,967

SiCFET (Silicon Carbide)

750 V

31A (Tc)

18V

4.8V @ 8.89mA

63 nC @ 18 V

1460 pF @ 500 V

+21V, -4V

-

93W

59mOhm @ 17A, 18V

175°C (TJ)

Surface Mount

TO-263-7L

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RSF015N06FRATL	Rohm Semiconductor	MOSFET N-CH 60V 1.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	封装: -	库存21,588	MOSFET (Metal Oxide)	60 V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	2 nC @ 5 V	110 pF @ 10 V	±20V	-	800mW (Ta)	290mOhm @ 1.5A, 10V	150°C	Surface Mount	TUMT3	3-SMD, Flat Leads
RQ5A020ZPTL	Rohm Semiconductor	MOSFET P-CH 12V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	封装: -	库存6,750	MOSFET (Metal Oxide)	12 V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	6.5 nC @ 4.5 V	770 pF @ 6 V	±10V	-	700mW (Ta)	105mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RD3P130SPTL1	Rohm Semiconductor	MOSFET P-CH 100V 13A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存13,248	MOSFET (Metal Oxide)	100 V	13A (Ta)	4V, 10V	2.5V @ 1mA	40 nC @ 10 V	2400 pF @ 25 V	±20V	-	20W (Tc)	200mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6576ENZ4C13	Rohm Semiconductor	650V 76A TO-247, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 76A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: -	库存1,686	MOSFET (Metal Oxide)	650 V	76A (Ta)	10V	4V @ 2.96mA	260 nC @ 10 V	6500 pF @ 25 V	±20V	-	735W (Tc)	46mOhm @ 44.4A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
RSQ045N03HZGTR	Rohm Semiconductor	MOSFET N-CH 30V 4.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: -	库存42	MOSFET (Metal Oxide)	30 V	4.5A (Ta)	4V, 10V	2.5V @ 1mA	9.5 nC @ 5 V	520 pF @ 10 V	±20V	-	950mW (Ta)	38mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
R6515ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 15A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	4V @ 430µA	40 nC @ 10 V	910 pF @ 25 V	±20V	-	60W (Tc)	315mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RS6R035BHTB1	Rohm Semiconductor	NCH 150V 35A, HSOP8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	封装: -	库存7,362	MOSFET (Metal Oxide)	150 V	35A (Tc)	6V, 10V	4V @ 1mA	25 nC @ 10 V	1470 pF @ 75 V	±20V	-	3W (Ta), 73W (Tc)	41mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
R6077VNZC17	Rohm Semiconductor	600V 29A TO-3PF, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	封装: -	库存1,260	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V, 15V	6.5V @ 1.9mA	108 nC @ 10 V	5200 pF @ 100 V	±30V	-	113W (Tc)	51mOhm @ 23A, 15V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6530KNZC17	Rohm Semiconductor	MOSFET N-CH 650V 30A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	封装: -	库存900	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 960µA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	86W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6050JNZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 50A TO247G FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 615W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	封装: -	库存1,635	MOSFET (Metal Oxide)	600 V	50A (Tc)	15V	7V @ 5mA	120 nC @ 15 V	4500 pF @ 100 V	±30V	-	615W (Tc)	83mOhm @ 25A, 15V	150°C (TJ)	Through Hole	TO-247G	TO-247-3
RS6G120BGTB1	Rohm Semiconductor	NCH 40V 210A, HSOP8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	封装: -	库存6,282	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	2.5V @ 1mA	67 nC @ 10 V	4240 pF @ 20 V	±20V	-	104W (Tc)	1.34mOhm @ 90A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RD3U080AAFRATL	Rohm Semiconductor	250V 8A TO-252, AUTOMOTIVE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存14,727	MOSFET (Metal Oxide)	250 V	8A (Tc)	10V	5V @ 1mA	25 nC @ 10 V	1440 pF @ 25 V	±30V	-	85W (Tc)	300mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RSR025P03HZGTL	Rohm Semiconductor	MOSFET P-CH 30V 2.5A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	封装: -	库存33,390	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	5.4 nC @ 5 V	460 pF @ 10 V	±20V	-	700mW (Ta)	98mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RD3H045SPFRATL	Rohm Semiconductor	MOSFET P-CH 45V 4.5A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存7,158	MOSFET (Metal Oxide)	45 V	4.5A (Ta)	4V, 10V	3V @ 1mA	12 nC @ 5 V	550 pF @ 10 V	±20V	-	15W (Tc)	155mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RSL020P03FRATR	Rohm Semiconductor	MOSFET P-CH 30V 2A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	封装: -	库存40,401	MOSFET (Metal Oxide)	30 V	2A (Ta)	10V	2.5V @ 1mA	3.9 nC @ 5 V	350 pF @ 10 V	±20V	-	1W (Ta)	120mOhm @ 2A, 10V	150°C	Surface Mount	TUMT6	6-SMD, Flat Leads
R6020ANZ8U7C8	Rohm Semiconductor	MOSFET N-CH 600V 20A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4.15V @ 1mA	65 nC @ 10 V	2040 pF @ 25 V	±30V	-	120W (Tc)	220mOhm @ 10A, 10V	150°C	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6520ENXC7G	Rohm Semiconductor	650V 20A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	封装: -	库存2,907	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4V @ 630µA	61 nC @ 10 V	1400 pF @ 25 V	±20V	-	68W (Tc)	205mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RQ5E020SPTL	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	封装: -	库存8,055	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	2.5V @ 1mA	4.3 nC @ 5 V	370 pF @ 10 V	±20V	-	700mW (Ta)	120mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ6G050ATTCR	Rohm Semiconductor	PCH -30V -5A POWER MOSFET - RQ6G FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: -	库存70,098	MOSFET (Metal Oxide)	40 V	5A (Ta)	4.5V, 10V	2.5V @ 1mA	22 nC @ 10 V	1100 pF @ 20 V	±20V	-	950mW (Ta)	40mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
R6000ENHTB1	Rohm Semiconductor	600V 0.5A, SOP8, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 200mA, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	库存6,555	MOSFET (Metal Oxide)	600 V	500mA (Ta)	10V	5V @ 1mA	4.3 nC @ 10 V	45 pF @ 25 V	±20V	-	2W (Ta)	8.8Ohm @ 200mA, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ6E035SPTR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: -	库存8,118	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	9.2 nC @ 5 V	780 pF @ 10 V	±20V	-	950mW (Ta)	65mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
SCT4013DEC11	Rohm Semiconductor	750V, 105A, 3-PIN THD, TRENCH-ST FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 312W Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	封装: -	库存1,251	SiCFET (Silicon Carbide)	750 V	105A (Tj)	18V	4.8V @ 30.8mA	170 nC @ 18 V	4580 pF @ 500 V	+21V, -4V	-	312W	16.9mOhm @ 58A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RH6P040BHTB1	Rohm Semiconductor	NCH 100V 40A, HSMT8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	封装: -	库存16,380	MOSFET (Metal Oxide)	100 V	40A (Tc)	6V, 10V	4V @ 1mA	16.7 nC @ 10 V	1080 pF @ 50 V	±20V	-	59W (Tc)	15.6mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
R6004ENXC7G	Rohm Semiconductor	600V 4A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	封装: -	库存2,460	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 1mA	15 nC @ 10 V	250 pF @ 25 V	±20V	-	40W (Tc)	980mOhm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6006KND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存7,989	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	5.5V @ 1mA	12 nC @ 10 V	350 pF @ 25 V	±20V	-	70W (Tc)	830mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ7L050ATTCR	Rohm Semiconductor	PCH -60V -5A SMALL SIGNAL POWER FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	封装: -	库存6,255	MOSFET (Metal Oxide)	60 V	5A (Ta)	4.5V, 10V	2.5V @ 1mA	38 nC @ 10 V	2160 pF @ 30 V	±20V	-	1.1W (Ta)	39mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
LSS050P03FP8TB1	Rohm Semiconductor	MOSFET P-CH 30V 5A SOP8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RTL035N03FRATR	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TUMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	封装: -	库存34,098	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	6.4 nC @ 4.5 V	350 pF @ 10 V	-	-	1W (Ta)	56mOhm @ 3.5A, 4.5V	150°C	Surface Mount	TUMT6	6-SMD, Flat Leads
RF4G060ATTCR	Rohm Semiconductor	PCH -40V -6A POWER, DFN2020, MOS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 6-PowerUDFN	封装: -	库存8,898	MOSFET (Metal Oxide)	40 V	6A (Ta)	4.5V, 10V	2.5V @ 1mA	17.2 nC @ 10 V	880 pF @ 20 V	±20V	-	2W (Ta)	40mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	HUML2020L8	6-PowerUDFN
SCT4045DW7HRTL	Rohm Semiconductor	750V, 31A, 7-PIN SMD, TRENCH-STR FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 93W Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7L Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封装: -	库存2,967	SiCFET (Silicon Carbide)	750 V	31A (Tc)	18V	4.8V @ 8.89mA	63 nC @ 18 V	1460 pF @ 500 V	+21V, -4V	-	93W	59mOhm @ 17A, 18V	175°C (TJ)	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA