页 25 - Rohm Semiconductor 产品 - 晶体管 - 双极 (BJT) - 单，预偏置

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
DTC114WSATP	Rohm Semiconductor	TRANS PREBIAS NPN 300MW SPT Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存5,760	100mA	50V	10k	4.7k	24 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTC114TSATP	Rohm Semiconductor	TRANS PREBIAS NPN 300MW SPT Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存6,624	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTC114ESATP	Rohm Semiconductor	TRANS PREBIAS NPN 300MW SPT Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存6,320	50mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTB143ESTP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存2,832	500mA	50V	4.7k	4.7k	47 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTB123ESTP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存4,272	500mA	50V	2.2k	2.2k	39 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTB113ZSTP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存4,000	500mA	50V	1k	10k	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA144ESATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存60,000	30mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA143TSATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存7,920	100mA	50V	4.7k	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA143ESATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存36,000	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA143EKAT246	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存6,784	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTA124ESATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存60,000	30mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA114WSATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存3,024	100mA	50V	10k	4.7k	24 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA114ESATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存240,000	50mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTA113ZSATP	Rohm Semiconductor	TRANS PREBIAS PNP 300MW SPT Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	封装: SC-72 Formed Leads	库存2,160	100mA	50V	1k	10k	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Through Hole	SC-72 Formed Leads	SPT
DTD122JKT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存3,168	500mA	50V	220	4.7k	47 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTB114TKT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存5,440	500mA	40V	10k	-	100 @ 50mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTB143TKT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存4,688	500mA	40V	4.7k	-	100 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTC314TKT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 15V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存33,600	600mA	15V	10k	-	100 @ 50mA, 5V	80mV @ 2.5mA, 50mA	500nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
EML20T2R	Rohm Semiconductor	TRANS PREBIAS NPN 0.15W Transistor Type: NPN - Pre-Biased + Diode Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: SOT-563, SOT-666	库存7,376	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
DTC363EKT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 6.8k Resistor - Emitter Base (R2) (Ohms): 6.8k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存3,200	600mA	20V	6.8k	6.8k	70 @ 50mA, 5V	80mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTB122JKT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 10µA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存2,464	500mA	50V	220	4.7k	47 @ 50mA, 5V	300mV @ 2.5mA, 50mA	10µA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTD523YMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 150MW VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封装: SOT-723	库存4,352	500mA	12V	2.2k	10k	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260MHz	150mW	Surface Mount	SOT-723	VMT3
DTB743XMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封装: SOT-723	库存6,624	200mA	30V	4.7k	10k	140 @ 100mA, 2V	300mV @ 2.5mA, 50mA	500nA	260MHz	150mW	Surface Mount	SOT-723	VMT3
DTB543XMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封装: SOT-723	库存2,784	500mA	12V	4.7k	10k	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260MHz	150mW	Surface Mount	SOT-723	VMT3
DTB523YMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封装: SOT-723	库存7,344	500mA	12V	2.2k	10k	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260MHz	150mW	Surface Mount	SOT-723	VMT3
DTB113ZKT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封装: TO-236-3, SC-59, SOT-23-3	库存77,136	500mA	50V	1k	10k	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
EML17T2R	Rohm Semiconductor	TRANS PREBIAS PNP 0.12W EMT5 Transistor Type: PNP - Pre-Biased + Diode Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 120mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	封装: 6-SMD (5 Leads), Flat Lead	库存3,264	30mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	120mW	Surface Mount	6-SMD (5 Leads), Flat Lead	EMT5
DTA114ECAT116	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封装: TO-236-3, SC-59, SOT-23-3	库存2,320	50mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTD723YETL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封装: SC-75, SOT-416	库存6,416	200mA	30V	2.2k	10k	140 @ 100mA, 2V	300mV @ 2.5mA, 50mA	500nA	260MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3
DTD713ZETL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封装: SC-75, SOT-416	库存2,816	200mA	30V	1k	10k	140 @ 100mA, 2V	300mV @ 2.5mA, 50mA	500nA	260MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3

DTC114WSATP

Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存5,760

100mA

50V

10k

4.7k

24 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTC114TSATP

Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存6,624

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTC114ESATP

Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存6,320

50mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTB143ESTP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存2,832

500mA

50V

4.7k

47 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTB123ESTP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存4,272

500mA

50V

2.2k

39 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTB113ZSTP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存4,000

500mA

50V

1k

10k

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA144ESATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存60,000

30mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA143TSATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存7,920

100mA

50V

4.7k

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA143ESATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存36,000

100mA

50V

4.7k

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA143EKAT246

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存6,784

100mA

50V

4.7k

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTA124ESATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存60,000

30mA

50V

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA114WSATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存3,024

100mA

50V

10k

4.7k

24 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA114ESATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存240,000

50mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTA113ZSATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

封装: SC-72 Formed Leads

库存2,160

100mA

50V

1k

10k

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

300mW

Through Hole

SC-72 Formed Leads

SPT

DTD122JKT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存3,168

500mA

50V

220

4.7k

47 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTB114TKT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存5,440

500mA

40V

10k

-

100 @ 50mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTB143TKT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存4,688

500mA

40V

4.7k

-

100 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTC314TKT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存33,600

600mA

15V

10k

-

100 @ 50mA, 5V

80mV @ 2.5mA, 50mA

500nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

EML20T2R

Rohm Semiconductor

TRANS PREBIAS NPN 0.15W

Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: SOT-563, SOT-666

库存7,376

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

DTC363EKT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 6.8k
Resistor - Emitter Base (R2) (Ohms): 6.8k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存3,200

600mA

20V

6.8k

70 @ 50mA, 5V

80mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTB122JKT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 10µA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存2,464

500mA

50V

220

4.7k

47 @ 50mA, 5V

300mV @ 2.5mA, 50mA

10µA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTD523YMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 150MW VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封装: SOT-723

库存4,352

500mA

12V

2.2k

10k

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260MHz

150mW

Surface Mount

SOT-723

VMT3

DTB743XMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封装: SOT-723

库存6,624

200mA

30V

4.7k

10k

140 @ 100mA, 2V

300mV @ 2.5mA, 50mA

500nA

260MHz

150mW

Surface Mount

SOT-723

VMT3

DTB543XMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封装: SOT-723

库存2,784

500mA

12V

4.7k

10k

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260MHz

150mW

Surface Mount

SOT-723

VMT3

DTB523YMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封装: SOT-723

库存7,344

500mA

12V

2.2k

10k

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260MHz

150mW

Surface Mount

SOT-723

VMT3

DTB113ZKT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

库存77,136

500mA

50V

1k

10k

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

EML17T2R

Rohm Semiconductor

TRANS PREBIAS PNP 0.12W EMT5

Transistor Type: PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 120mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: EMT5

封装: 6-SMD (5 Leads), Flat Lead

库存3,264

30mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

120mW

Surface Mount

6-SMD (5 Leads), Flat Lead

EMT5

DTA114ECAT116

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封装: TO-236-3, SC-59, SOT-23-3

库存2,320

50mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTD723YETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封装: SC-75, SOT-416

库存6,416

200mA

30V

2.2k

10k

140 @ 100mA, 2V

300mV @ 2.5mA, 50mA

500nA

260MHz

150mW

Surface Mount

SC-75, SOT-416

EMT3

DTD713ZETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封装: SC-75, SOT-416

库存2,816

200mA

30V

1k

10k

140 @ 100mA, 2V

300mV @ 2.5mA, 50mA

500nA

260MHz

150mW

Surface Mount

SC-75, SOT-416

EMT3