页 49 - ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

记录 2,260
页  49/76
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTD18N06L-1G
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存6,368
MOSFET (Metal Oxide)
60V
18A (Ta)
5V
2V @ 250µA
22nC @ 5V
675pF @ 25V
±15V
-
2.1W (Ta), 55W (Tj)
65 mOhm @ 9A, 5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD18N06L
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存182,400
MOSFET (Metal Oxide)
60V
18A (Ta)
5V
2V @ 250µA
22nC @ 5V
675pF @ 25V
±15V
-
2.1W (Ta), 55W (Tj)
65 mOhm @ 9A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD18N06G
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存122,400
MOSFET (Metal Oxide)
60V
18A (Ta)
10V
4V @ 250µA
30nC @ 10V
710pF @ 25V
±20V
-
2.1W (Ta), 55W (Tj)
60 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06-1G
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,576
MOSFET (Metal Oxide)
60V
18A (Ta)
10V
4V @ 250µA
30nC @ 10V
710pF @ 25V
±20V
-
2.1W (Ta), 55W (Tj)
60 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD18N06
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,408
MOSFET (Metal Oxide)
60V
18A (Ta)
10V
4V @ 250µA
30nC @ 10V
710pF @ 25V
±20V
-
2.1W (Ta), 55W (Tj)
60 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD12N10G
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存62,508
MOSFET (Metal Oxide)
100V
12A (Ta)
10V
4V @ 250µA
20nC @ 10V
550pF @ 25V
±20V
-
1.28W (Ta), 56.6W (Tc)
165 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD12N10-1G
ON Semiconductor

MOSFET N-CH 100V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存39,564
MOSFET (Metal Oxide)
100V
12A (Ta)
10V
4V @ 250µA
20nC @ 10V
550pF @ 25V
±20V
-
1.28W (Ta), 56.6W (Tc)
165 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD110N02RG
ON Semiconductor

MOSFET N-CH 24V 12.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,504
MOSFET (Metal Oxide)
24V
12.5A (Ta), 110A (Tc)
4.5V, 10V
2V @ 250µA
28nC @ 4.5V
3440pF @ 20V
±20V
-
1.5W (Ta), 110W (Tc)
4.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD110N02R-001G
ON Semiconductor

MOSFET N-CH 24V 12.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存71,640
MOSFET (Metal Oxide)
24V
12.5A (Ta), 110A (Tc)
4.5V, 10V
2V @ 250µA
28nC @ 4.5V
3440pF @ 20V
±20V
-
1.5W (Ta), 110W (Tc)
4.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD110N02R
ON Semiconductor

MOSFET N-CH 24V 12.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存52,740
MOSFET (Metal Oxide)
24V
12.5A (Ta), 110A (Tc)
4.5V, 10V
2V @ 250µA
28nC @ 4.5V
3440pF @ 20V
±20V
-
1.5W (Ta), 110W (Tc)
4.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTB90N02G
ON Semiconductor

MOSFET N-CH 24V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,752
MOSFET (Metal Oxide)
24V
90A (Ta)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2120pF @ 20V
±20V
-
85W (Tc)
5.8 mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB90N02
ON Semiconductor

MOSFET N-CH 24V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存17,400
MOSFET (Metal Oxide)
24V
90A (Ta)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2120pF @ 20V
±20V
-
85W (Tc)
5.8 mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB85N03G
ON Semiconductor

MOSFET N-CH 28V 85A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,280
MOSFET (Metal Oxide)
28V
85A (Tc)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2150pF @ 24V
±20V
-
80W (Tc)
6.8 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB85N03
ON Semiconductor

MOSFET N-CH 28V 85A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,376
MOSFET (Metal Oxide)
28V
85A (Tc)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2150pF @ 24V
±20V
-
80W (Tc)
6.8 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB75N06LT4G
ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存390,000
MOSFET (Metal Oxide)
60V
75A (Ta)
5V
2V @ 250µA
92nC @ 5V
4370pF @ 25V
±20V
-
2.4W (Ta), 214W (Tj)
11 mOhm @ 37.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N06LG
ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,256
MOSFET (Metal Oxide)
60V
75A (Ta)
5V
2V @ 250µA
92nC @ 5V
4370pF @ 25V
±20V
-
2.4W (Ta), 214W (Tj)
11 mOhm @ 37.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N06L
ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,792
MOSFET (Metal Oxide)
60V
75A (Ta)
5V
2V @ 250µA
92nC @ 5V
4370pF @ 25V
±20V
-
2.4W (Ta), 214W (Tj)
11 mOhm @ 37.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB75N06G
ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存426,204
MOSFET (Metal Oxide)
60V
75A (Ta)
10V
4V @ 250µA
130nC @ 10V
4510pF @ 25V
±20V
-
2.4W (Ta), 214W (Tj)
9.5 mOhm @ 37.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB75N03L09G
ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,132
MOSFET (Metal Oxide)
30V
75A (Tc)
5V
2V @ 250µA
75nC @ 5V
5635pF @ 25V
±20V
-
2.5W (Ta), 125W (Tc)
8 mOhm @ 37.5A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB75N03-6T4G
ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,200
MOSFET (Metal Oxide)
30V
75A (Tc)
10V
2V @ 250µA
75nC @ 5V
5635pF @ 25V
±20V
-
2.5W (Ta), 125W (Tc)
6.5 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N03-6G
ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,888
MOSFET (Metal Oxide)
30V
75A (Tc)
10V
2V @ 250µA
75nC @ 5V
5635pF @ 25V
±20V
-
2.5W (Ta), 125W (Tc)
6.5 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N03-006
ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,376
MOSFET (Metal Oxide)
30V
75A (Tc)
10V
2V @ 250µA
75nC @ 5V
5635pF @ 25V
±20V
-
2.5W (Ta), 125W (Tc)
6.5 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB65N02RG
ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,496
MOSFET (Metal Oxide)
25V
65A (Tc)
4.5V, 10V
2V @ 250µA
9.5nC @ 4.5V
1330pF @ 20V
±20V
-
1.04W (Ta), 62.5W (Tc)
8.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB65N02R
ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,408
MOSFET (Metal Oxide)
25V
65A (Tc)
4.5V, 10V
2V @ 250µA
9.5nC @ 4.5V
1330pF @ 20V
±20V
-
1.04W (Ta), 62.5W (Tc)
8.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB60N06LG
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,168
MOSFET (Metal Oxide)
60V
60A (Ta)
5V
2V @ 250µA
65nC @ 5V
3075pF @ 25V
±15V
-
2.4W (Ta), 150W (Tj)
16 mOhm @ 30A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB60N06L
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存390,000
MOSFET (Metal Oxide)
60V
60A (Ta)
5V
2V @ 250µA
65nC @ 5V
3075pF @ 25V
±15V
-
2.4W (Ta), 150W (Tj)
16 mOhm @ 30A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB60N06G
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存12,228
MOSFET (Metal Oxide)
60V
60A (Ta)
10V
4V @ 250µA
81nC @ 10V
3220pF @ 25V
±20V
-
2.4W (Ta), 150W (Tj)
14 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB5605PT4
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,288
MOSFET (Metal Oxide)
60V
18.5A (Ta)
5V
2V @ 250µA
22nC @ 5V
1190pF @ 25V
±20V
-
88W (Tc)
140 mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB5605PG
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,504
MOSFET (Metal Oxide)
60V
18.5A (Ta)
5V
2V @ 250µA
22nC @ 5V
1190pF @ 25V
±20V
-
88W (Tc)
140 mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB5605P
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,936
MOSFET (Metal Oxide)
60V
18.5A (Ta)
5V
2V @ 250µA
22nC @ 5V
1190pF @ 25V
±20V
-
88W (Tc)
140 mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB