Microsemi Corporation 产品

090-00218-001

Microsemi Corporation

OSC ATOMIC CLK 10MHZ CMOS 35G

• Type: Atomic
• Frequency: 10MHz
• Function: -
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±5ppb
• Operating Temperature: -10°C ~ 35°C
• Current - Supply (Max): -
• Ratings: -
• Mounting Type: Through Hole
• Package / Case: 12-DIP Module, 9 Leads
• Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
• Height - Seated (Max): 0.450" (11.43mm)

封装: 12-DIP Module, 9 Leads

APTGF300A120D3G

Microsemi Corporation

IGBT MODULE NPT PHASE LEG D3

• IGBT Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 420A
• Power - Max: 2100W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 300A
• Current - Collector Cutoff (Max): 5mA
• Input Capacitance (Cies) @ Vce: 19nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: D-3 Module
• Supplier Device Package: D3

封装: D-3 Module

APTM100UM45DAG

Microsemi Corporation

MOSFET N-CH 1000V 215A SP6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 215A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 30mA
• Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 5000W (Tc)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP6
• Package / Case: SP6

封装: SP6

ARF463AG

Microsemi Corporation

RF PWR MOSFET 500V 9A TO-247

• Transistor Type: N-Channel
• Frequency: 81.36MHz
• Gain: 15dB
• Voltage - Test: 125V
• Current Rating: 9A
• Noise Figure: -
• Current - Test: 50mA
• Power - Output: 100W
• Voltage - Rated: 500V
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

APTMC60TLM55CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 55A SP3F

• FET Type: 4 N-Channel (Three Level Inverter)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 55A
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封装: SP3

MRF8372G

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

1PMT5917A/TR13

Microsemi Corporation

DIODE ZENER 4.7V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封装: DO-216AA

1EZ160D2/TR12

Microsemi Corporation

DIODE ZENER 160V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1400 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1EZ120D2/TR12

Microsemi Corporation

DIODE ZENER 120V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 710 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N3329RB

Microsemi Corporation

DIODE ZENER 45V 50W DO5

• Voltage - Zener (Nom) (Vz): 45V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

封装: DO-203AB, DO-5, Stud

JAN1N4372AUR-1

Microsemi Corporation

DIODE ZENER 3V DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 29 Ohms
• Current - Reverse Leakage @ Vr: 30µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

1N5946CP/TR12

Microsemi Corporation

DIODE ZENER 75V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 140 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1PMT4132E3/TR7

Microsemi Corporation

DIODE ZENER 82V 1W DO216

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 62.32V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

封装: DO-216AA

APT20DC120HJ

Microsemi Corporation

RECT BRIDGE 20A 1200V SOT227

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Current - Reverse Leakage @ Vr: 400µA @ 1200V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

封装: SOT-227-4, miniBLOC

SG7912AIG-DESC

Microsemi Corporation

IC REG LINEAR 500MA TO257

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-257-3
• Supplier Device Package: TO-257

封装: TO-257-3

A2F200M3F-CSG288I

Microsemi Corporation

IC FPGA 200K GATES 256KB 288-CSP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 200K Gates, 4608 D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 288-TFBGA, CSPBGA
• Supplier Device Package: 288-CSP (11x11)

封装: 288-TFBGA, CSPBGA

A3P1000L-1PQ208I

Microsemi Corporation

IC FPGA 154 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 154
• Number of Gates: 1000000
• Voltage - Supply: 1.14V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

M1AFS1500-1FG484K

Microsemi Corporation

IC FPGA 223 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 276480
• Number of I/O: 223
• Number of Gates: 1500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

LXMG1617A-05-62

Microsemi Corporation

MOD INVERTER CCFL 6W 5V PROG

• Voltage - Input: 4.75 ~ 5.25V
• Output: 1900V
• Type: CCFL and UV Lamps
• Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
• Mounting Type: Chassis Mount

封装: -

JAN1N6127

Microsemi Corporation

TVS DIODE 56VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 56V
• Voltage - Breakdown (Min): 67.74V
• Voltage - Clamping (Max) @ Ipp: 108.26V
• Current - Peak Pulse (10/1000µs): 4.56A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

封装: B, Axial

MXPLAD36KP400AE3

Microsemi Corporation

TVS DIODE 644VC 56A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 400V
• Voltage - Breakdown (Min): 444V
• Voltage - Clamping (Max) @ Ipp: 644V
• Current - Peak Pulse (10/1000µs): 56A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MAPLAD36KP150CA

Microsemi Corporation

TVS DIODE 243VC 149A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 149A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MPLAD18KP15A

Microsemi Corporation

TVS DIODE 24.4VC 738A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 738A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXLCE100AE3

Microsemi Corporation

TVS DIODE 100VWM 162VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MXL5KP22AE3

Microsemi Corporation

TVS DIODE 22VWM 35.5VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 141A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXP5KE100AE3

Microsemi Corporation

TVS DIODE 100VWM 162VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

30KPA58CE3/TR13

Microsemi Corporation

TVS DIODE 58VWM P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 61.07V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

MASMBJ64AE3

Microsemi Corporation

TVS DIODE 64VWM 103VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

SMCJ350CAE3/TR13

Microsemi Corporation

TVS DIODE 350VWM SMCJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 350V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

MMA002AA

Microsemi Corporation

MMIC AMPLIFIER - 5-20GHZ

• Frequency: 5GHz ~ 20GHz
• P1dB: 17.5dBm
• Gain: 13.5dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 3.3V
• Current - Supply: 160mA
• Test Frequency: 5GHz ~ 20GHz
• Package / Case: -
• Supplier Device Package: -

封装: -