Microsemi Corporation 产品

APT64GA90B2D30

Microsemi Corporation

IGBT 900V 117A 500W TO-247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 117A
• Current - Collector Pulsed (Icm): 193A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
• Power - Max: 500W
• Switching Energy: 1192µJ (on), 1088µJ (off)
• Input Type: Standard
• Gate Charge: 162nC
• Td (on/off) @ 25°C: 18ns/131ns
• Test Condition: 600V, 38A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

封装: TO-247-3 Variant

APT29F100L

Microsemi Corporation

MOSFET N-CH 1000V 30A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264
• Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

JAN2N2222AUB

Microsemi Corporation

TRANS NPN 50V 0.8A

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 500mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Non-Standard
• Supplier Device Package: -

封装: 3-SMD, Non-Standard

SMBJ5333A/TR13

Microsemi Corporation

DIODE ZENER 3.3V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 300µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

1N5335E3/TR12

Microsemi Corporation

DIODE ZENER 3.9V 5W T18

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

1N5365B

Microsemi Corporation

DIODE ZENER 36V 5W T18

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 25.9V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

JANTXV1N5534CUR-1

Microsemi Corporation

DIODE ZENER 14V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 14V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 12.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

1N3326RB

Microsemi Corporation

DIODE ZENER 36V 50W DO5

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

封装: DO-203AB, DO-5, Stud

JANTXV1N4116CUR-1

Microsemi Corporation

DIODE ZENER 24V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 18.3V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

JANTX1N3044C-1

Microsemi Corporation

DIODE ZENER 100V 1W DO41

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: DO-204AL, DO-41, Axial

JANTX1N981CUR-1

Microsemi Corporation

DIODE ZENER 68V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 230 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 52V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

1PMT5933C/TR7

Microsemi Corporation

DIODE ZENER 22V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封装: DO-216AA

SMBJ5369B/TR13

Microsemi Corporation

DIODE ZENER 51V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 27 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 36.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

UFS515JE3/TR13

Microsemi Corporation

DIODE GEN PURP 150V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AB, SMC

FST60100

Microsemi Corporation

DIODE MODULE 100V 60A TO249

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 100V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-249-9, TO-249AA Variant
• Supplier Device Package: TO-249

封装: TO-249-9, TO-249AA Variant

M2S010S-TQG144I

Microsemi Corporation

IC FPGA SOC

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封装: -

A42MX16-VQ100M

Microsemi Corporation

IC FPGA 83 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封装: 100-TQFP

A40MX04-1VQG80

Microsemi Corporation

IC FPGA 69 I/O 80VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 69
• Number of Gates: 6000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

封装: 80-TQFP

ZL30364GDG2003P

Microsemi Corporation

IC CLK TRANSLATOR 2CH 144LBGA

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MMAD1107/TR13

Microsemi Corporation

TVS DIODE 12A 14SOIC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 8
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 75V (Max)
• Voltage - Breakdown (Min): 90V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): 12A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Ethernet
• Capacitance @ Frequency: 1.5pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

MP5KE24CA

Microsemi Corporation

TVS DIODE 24VWM 38.9VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 12.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

M1.5KE91CA

Microsemi Corporation

TVS DIODE 77.8VWM 125VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 77.8V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MX15KP26A

Microsemi Corporation

TVS DIODE 26VWM 44VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 44V
• Current - Peak Pulse (10/1000µs): 341A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MPLAD15KP13A

Microsemi Corporation

TVS DIODE 13VWM 21.5VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 696A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

30KPA168CE3/TR13

Microsemi Corporation

TVS DIODE 168VWM P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 168V
• Voltage - Breakdown (Min): 176.94V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

MXLP6KE27CA

Microsemi Corporation

TVS DIODE 23.1VWM 37.5VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 16A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

MXL1.5KE39A

Microsemi Corporation

TVS DIODE 33.3VWM 53.9VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 53.9V
• Current - Peak Pulse (10/1000µs): 28A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MXL1.5KE36A

Microsemi Corporation

TVS DIODE 30.8VWM 49.9VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 30A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MXL1.5KE22AE3

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MSMBJ15CA

Microsemi Corporation

TVS DIODE 15VWM 24.4VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB