Microsemi Corporation 产品

JANTX2N4093UB

Microsemi Corporation

JFET N-CH 40V 0.36W SMD

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 40V
• Drain to Source Voltage (Vdss): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: -
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
• Resistance - RDS(On): 80 Ohm
• Power - Max: 360mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB

封装: 3-SMD, No Lead

APTGF50DSK120T3G

Microsemi Corporation

MOD IGBT NPT 1200V 70A SP3

• IGBT Type: NPT
• Configuration: Dual Buck Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Power - Max: 312W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.45nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封装: SP3

APTGF150A120T3WG

Microsemi Corporation

IGBT NPT PHASE 1200V 210A SP3

• IGBT Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 210A
• Power - Max: 961W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封装: SP3

3135GN-100M

Microsemi Corporation

TRANSISTOR GAN 55-QP

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MRF5812G

Microsemi Corporation

TRANS NPN 15V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

SD1526-01

Microsemi Corporation

TRANS RF BIPO 21.9W 1A M115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 45V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 21.9W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 1A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M115
• Supplier Device Package: M115

封装: M115

1N4929

Microsemi Corporation

DIODE ZENER 19.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 19.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 36 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -25°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

1N5913PE3/TR8

Microsemi Corporation

DIODE ZENER 3.3V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N5337CE3/TR8

Microsemi Corporation

DIODE ZENER 4.7V 5W T18

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

1EZ140D2E3/TR8

Microsemi Corporation

DIODE ZENER 140V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 140V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1100 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 106.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTX1N6336US

Microsemi Corporation

DIODE ZENER 33V 500MW B SQ-MELF

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 25V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

封装: SQ-MELF, B

JAN1N3827AUR-1

Microsemi Corporation

DIODE ZENER 5.6V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB (MELF, LL41)

封装: DO-213AB, MELF

CDLL5921D

Microsemi Corporation

DIODE ZENER 6.8V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±1%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 5.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF

SMBJ5360B/TR13

Microsemi Corporation

DIODE ZENER 25V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

JANTXV1N6662US

Microsemi Corporation

DIODE GEN PURP 400V 500MA D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50nA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, A

SG7905AK-DESC

Microsemi Corporation

IC REG LINEAR -5V 1.5A TO3

• Output Configuration: Negative
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): -35V
• Voltage - Output (Min/Fixed): -5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 2.3V @ 1A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2.5mA
• PSRR: 54dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3

封装: TO-204AA, TO-3

MT8888CSR1

Microsemi Corporation

IC TXRX DTMF 20SOIC

• Function: DTMF Transceiver
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 7mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

封装: 20-SOIC (0.295", 7.50mm Width)

A3P1000-2FGG484M

Microsemi Corporation

IC FPGA 300 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 300
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FBGA (23x23)

封装: 484-BGA

M2GL050-FCS325I

Microsemi Corporation

IC FPGA 200 I/O 325FCBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56340
• Total RAM Bits: 1869824
• Number of I/O: 200
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

封装: 325-TFBGA

ZL40200LDG1

Microsemi Corporation

IC CLK BUFFER 1:2 750MHZ 16QFN

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:2
• Differential - Input:Output: Yes/Yes
• Input: CML, HCSL, LVCMOS, LVDS, LVPECL
• Output: LVPECL
• Frequency - Max: 750MHz
• Voltage - Supply: 2.375 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-QFN (3x3)

封装: 16-VFQFN Exposed Pad

JANTX1N5645A

Microsemi Corporation

TVS DIODE 28.2VWM 45.7VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28.2V
• Voltage - Breakdown (Min): 31.4V
• Voltage - Clamping (Max) @ Ipp: 45.7V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

封装: DO-13

MSMCJLCE160A

Microsemi Corporation

TVS DIODE 160VWM 259VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

MA5KP5.0AE3

Microsemi Corporation

TVS DIODE 5VWM 9.2VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.2V
• Current - Peak Pulse (10/1000µs): 543A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

封装: DO-204AR, Axial

MXPLAD18KP30CAE3

Microsemi Corporation

TVS DIODE 48.4VC 372A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 372A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MAPLAD36KP20CA

Microsemi Corporation

TVS DIODE 34VC 1059A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 34V
• Current - Peak Pulse (10/1000µs): 1059A (1.059kA)
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXLPLAD18KP11CAE3

Microsemi Corporation

TVS DIODE 18.2VC 989A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 989A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXLPLAD18KP130CA

Microsemi Corporation

TVS DIODE 209VC 87A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 87A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MASMBG85AE3

Microsemi Corporation

TVS DIODE 85VWM 137VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 4.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

UXN40M7K

Microsemi Corporation

MMIC PRESCALER

• Function: -
• Frequency: -
• RF Type: -
• Secondary Attributes: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MMA005AA

Microsemi Corporation

MMIC AMPLIFIER - 2-22GHZ

• Frequency: 2GHz ~ 20GHz
• P1dB: 14dBm
• Gain: 13.5dB
• Noise Figure: 2.5dB
• RF Type: -
• Voltage - Supply: 8V
• Current - Supply: 105mA
• Test Frequency: 20GHz
• Package / Case: -
• Supplier Device Package: -

封装: -