Microsemi Corporation 产品

APT70GR120L

Microsemi Corporation

IGBT 1200V 160A 961W TO264

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
• Power - Max: 961W
• Switching Energy: 3.82mJ (on), 2.58mJ (off)
• Input Type: Standard
• Gate Charge: 544nC
• Td (on/off) @ 25°C: 33ns/278ns
• Test Condition: 600V, 70A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

封装: TO-264-3, TO-264AA

APT60N60SCSG/TR

Microsemi Corporation

MOSFET N-CH 600V 60A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 431W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT10021JFLL

Microsemi Corporation

MOSFET N-CH 1000V 37A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 37A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

APTM120A65FT1G

Microsemi Corporation

MOSFET 2N-CH 1200V 16A SP1

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 16A
• Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
• Power - Max: 390W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

封装: SP1

1N4731 G

Microsemi Corporation

DIODE ZENER 4.3V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

SMBG5956AE3/TR13

Microsemi Corporation

DIODE ZENER 200V 2W SMBG

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

JANTXV1N4123CUR-1

Microsemi Corporation

DIODE ZENER 39V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

JANTX1N755C-1

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

JANTXV1N971BUR-1

Microsemi Corporation

DIODE ZENER 27V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 41 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

1N5747C

Microsemi Corporation

DIODE ZENER 30V 500MW DO35

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

1N4747CPE3/TR8

Microsemi Corporation

DIODE ZENER 20V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N5920BPE3/TR8

Microsemi Corporation

DIODE ZENER 6.2V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

UPS10100E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 10A 100V PWRMITE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

JANTXV1N5314-1

Microsemi Corporation

DIODE CURRENT REG 100V AXIAL

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 4.7mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

封装: DO-204AA, DO-7, Axial

M2S060-VFG400

Microsemi Corporation

IC FPGA SOC 60K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 60K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

封装: 400-LFBGA

AGLN125V5-CSG81

Microsemi Corporation

IC FPGA 60 I/O 81CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 3072
• Total RAM Bits: 36864
• Number of I/O: 60
• Number of Gates: 125000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 81-WFBGA, CSBGA
• Supplier Device Package: 81-CSP (5x5)

封装: 81-WFBGA, CSBGA

M2GL150-1FCVG484

Microsemi Corporation

IC FPGA 248 I/O 484VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 146124
• Total RAM Bits: 5120000
• Number of I/O: 248
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BFBGA
• Supplier Device Package: 484-BGA

封装: 484-BFBGA

AX250-FGG256

Microsemi Corporation

IC FPGA 138 I/O 256FBGA

• Number of LABs/CLBs: 4224
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 138
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

M2GL010S-1TQ144

Microsemi Corporation

IC FPGA 84 I/O 144TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 12084
• Total RAM Bits: 933888
• Number of I/O: 84
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封装: -

ZL30367GDG2003N

Microsemi Corporation

IC CLK TRANSLATOR 2CH 144LBGA

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

LXM1623-05-61

Microsemi Corporation

MOD INVERTER CCFL DUAL 6W 5V

• Voltage - Input: 5V
• Output: 1800V
• Type: CCFL and UV Lamps
• Size / Dimension: 6.50" L x 0.83" W x 0.30" H (165mm x 21mm x 7.5mm)
• Mounting Type: Chassis Mount

封装: -

MSMCGLCE51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 18.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXSMBJ24CAE3

Microsemi Corporation

TVS DIODE 24VWM 38.9VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 15.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

MXP6KE120A

Microsemi Corporation

TVS DIODE 102VWM 165VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 102V
• Voltage - Breakdown (Min): 114V
• Voltage - Clamping (Max) @ Ipp: 165V
• Current - Peak Pulse (10/1000µs): 3.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

MASMCJ6.0CAE3

Microsemi Corporation

TVS DIODE 6VWM 10.3VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 6V
• Voltage - Breakdown (Min): 6.67V
• Voltage - Clamping (Max) @ Ipp: 10.3V
• Current - Peak Pulse (10/1000µs): 145.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

MSMBG36CA

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

SMCJ6041AE3/TR13

Microsemi Corporation

TVS DIODE 10VWM 16.7VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

SMCJ250E3/TR13

Microsemi Corporation

TVS DIODE 250VWM DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 250V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

1N5944BG

Microsemi Corporation

DIODE ZENER 62V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 47.1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: -

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APT10SCE170B

Microsemi Corporation

DIODE SIL CARB 1.7KV 23A TO247

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1700 V
• Current - Average Rectified (Io): 23A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
• Capacitance @ Vr, F: 1120pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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