Microsemi Corporation 产品

APT95GR65JDU60

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 135A
• Current - Collector Pulsed (Icm): 380A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
• Power - Max: 446W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: 29ns/226ns
• Test Condition: 433V, 95A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

封装: SOT-227-4, miniBLOC

APT50M75JLLU2

Microsemi Corporation

MOSFET N-CH 500V 51A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 51A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

MS2204

Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10.8dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
• Current - Collector (Ic) (Max): 300mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M115
• Supplier Device Package: M115

封装: M115

JANTXV2N2325A

Microsemi Corporation

SCR 150V TO205AA

• Voltage - Off State: 150V
• Voltage - Gate Trigger (Vgt) (Max): 600mV
• Current - Gate Trigger (Igt) (Max): 20µA
• Voltage - On State (Vtm) (Max): 2.2V
• Current - On State (It (AV)) (Max): 1.6A
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): 2mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
• SCR Type: Sensitive Gate
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

封装: TO-205AA, TO-5-3 Metal Can

JANTX1N943B-1

Microsemi Corporation

DIODE ZENER 12.28V 500MW DO35

• Voltage - Zener (Nom) (Vz): 11.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 15µA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

JANTXV1N5542DUR-1

Microsemi Corporation

DIODE ZENER 24V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 21.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

JANTX1N3034CUR-1

Microsemi Corporation

DIODE ZENER 39V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

封装: DO-213AB, MELF (Glass)

1N3313B

Microsemi Corporation

DIODE ZENER 14V 50W DO5

• Voltage - Zener (Nom) (Vz): 14V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 1.2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

封装: DO-203AB, DO-5, Stud

JANTXV1N4132D-1

Microsemi Corporation

DIODE ZENER 82V 500MW DO35

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 800 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 62.4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

JANTX1N4957

Microsemi Corporation

DIODE ZENER 9.1V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 6.9V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: -

封装: E, Axial

CDLL3821

Microsemi Corporation

DIODE ZENER 3.3V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF

JAN1N985C-1

Microsemi Corporation

DIODE ZENER 100V 500MW DO35

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

1N4619UR

Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 400nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)

UPS170E3/TR7

Microsemi Corporation

DIODE SCHOTTKY 1A 70V POWERMITE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

1N4938-1

Microsemi Corporation

DIODE GEN PURP 175V 100MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 175V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 175V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AH, DO-35, Axial

MT8870DS1

Microsemi Corporation

IC RECEIVER DTMF 18SOIC

• Function: DTMF Receiver
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 3mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOIC

封装: 18-SOIC (0.295", 7.50mm Width)

M2S010TS-1VF400

Microsemi Corporation

IC FPGA SOC 10K LUTS 400VFBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

封装: 400-LFBGA

AGLP030V5-VQ128I

Microsemi Corporation

IC FPGA 101 I/O 128VQFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 792
• Total RAM Bits: -
• Number of I/O: 101
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 128-TQFP
• Supplier Device Package: 128-VTQFP (14x14)

封装: 128-TQFP

APA750-FG676

Microsemi Corporation

IC FPGA 454 I/O 676FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 454
• Number of Gates: 750000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

封装: 676-BGA

AGLE3000V2-FGG484

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 75264
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

U1AFS1500-FG256

Microsemi Corporation

IC FPGA 119 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 276480
• Number of I/O: 119
• Number of Gates: 1500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

A3P125-1VQG100T

Microsemi Corporation

IC FPGA 71 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 71
• Number of Gates: 125000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封装: 100-TQFP

ZL30363GDG2

Microsemi Corporation

IC NETWORK SYNCH ETH CLK 144LBGA

• PLL: Yes
• Main Purpose: Ethernet, Fibre Channel, SONET/SDH, Stratum
• Input: Clock
• Output: LVCMOS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 11:16
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 750MHz
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 144-BGA
• Supplier Device Package: 144-LBGA (13x13)

封装: 144-BGA

MP6KE39CA

Microsemi Corporation

TVS DIODE 33.3VWM 53.9VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 53.9V
• Current - Peak Pulse (10/1000µs): 11.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

MP4KE33CAE3

Microsemi Corporation

TVS DIODE 28.2VWM 45.7VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 28.2V
• Voltage - Breakdown (Min): 31.4V
• Voltage - Clamping (Max) @ Ipp: 45.7V
• Current - Peak Pulse (10/1000µs): 9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

MXRT100KP85A

Microsemi Corporation

TVS DIODE 85VWM 166VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 166V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXLPLAD36KP18AE3

Microsemi Corporation

TVS DIODE 30.8VC 1169A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 30.8V
• Current - Peak Pulse (10/1000µs): 1169A (1.169kA)
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MAPLAD30KP16CAE3

Microsemi Corporation

TVS DIODE 16VWM 27.2VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 27.2V
• Current - Peak Pulse (10/1000µs): 1101A (1.101kA)
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MPLAD18KP120AE3

Microsemi Corporation

TVS DIODE 193VC 94A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 94A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MSMBG16CAE3

Microsemi Corporation

TVS DIODE 16VWM 26VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 23.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing