Microsemi Corporation 产品

APTGT150DH120G

Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP6

• IGBT Type: Trench Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 220A
• Power - Max: 690W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector Cutoff (Max): 350µA
• Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

封装: SP6

JANTX2N6770

Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3
• Package / Case: TO-204AE

封装: TO-204AE

APT30F50B

Microsemi Corporation

MOSFET N-CH 500V 30A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4525pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 415W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

封装: TO-247-3

JANTXV2N5663

Microsemi Corporation

TRANS NPN 300V 2A TO-5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
• Current - Collector Cutoff (Max): 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

封装: TO-205AA, TO-5-3 Metal Can

UTV020

Microsemi Corporation

TRANS RF BIPO 17W 1.2A 55FT-6

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 470MHz ~ 860MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12dB
• Power - Max: 17W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
• Current - Collector (Ic) (Max): 1.2A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: 55FT
• Supplier Device Package: 55FT

封装: 55FT

1N5527B (DO35)

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 6.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

1EZ200DE3/TR12

Microsemi Corporation

DIODE ZENER 200V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±20%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1900 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTX1N3026C-1

Microsemi Corporation

DIODE ZENER 18V 1W DO41

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: DO-204AL, DO-41, Axial

JAN1N4954D

Microsemi Corporation

DIODE ZENER 6.8V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1 Ohms
• Current - Reverse Leakage @ Vr: 150µA @ 5.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

封装: E, Axial

JANTX1N4493

Microsemi Corporation

DIODE ZENER 150V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 120V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JAN1N5545C-1

Microsemi Corporation

DIODE ZENER 30V 500MW DO35

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

JANTX1N4614UR-1

Microsemi Corporation

DIODE ZENER 1.8V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 1.8V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 3.5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

1N4976

Microsemi Corporation

DIODE ZENER 56V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: -

封装: E, Axial

JAN1N4100-1

Microsemi Corporation

DIODE ZENER 7.5V DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 5.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

1N5918BE3/TR13

Microsemi Corporation

DIODE ZENER 5.1V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTXV1N3893

Microsemi Corporation

DIODE GEN PURP 400V 12A DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 115pF @ 10V, 1MHz
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

MPF300TS-1FCG1152I

Microsemi Corporation

IC FPGA 512 I/O

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 300000
• Total RAM Bits: 21094400
• Number of I/O: 512
• Number of Gates: -
• Voltage - Supply: 0.97 V ~ 1.08 V
• Mounting Type: -
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封装: -

AX250-1FG256

Microsemi Corporation

IC FPGA 138 I/O 256FBGA

• Number of LABs/CLBs: 4224
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 138
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

A3P1000-2FGG144

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 97
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

封装: 144-LBGA

MAP4KE82AE3

Microsemi Corporation

TVS DIODE 70.1VWM 113VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70.1V
• Voltage - Breakdown (Min): 77.9V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 3.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

UPTB48/TR13

Microsemi Corporation

TVS DIODE 48VWM POWERMITE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 54V
• Voltage - Clamping (Max) @ Ipp: 84.3V
• Current - Peak Pulse (10/1000µs): 1.78A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite 1 (DO216-AA)

封装: DO-216AA

MAPLAD36KP33AE3

Microsemi Corporation

TVS DIODE 53.3VC 676A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 676A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MX15KP36CA

Microsemi Corporation

TVS DIODE 36VWM 59.7VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 59.7V
• Current - Peak Pulse (10/1000µs): 251A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXL15KP48CA

Microsemi Corporation

TVS DIODE 48VWM 77.7VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.7V
• Current - Peak Pulse (10/1000µs): 193A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXLPLAD18KP13AE3

Microsemi Corporation

TVS DIODE 21.5VC 838A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 838A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXSMBJ45CA

Microsemi Corporation

TVS DIODE 45VWM 72.7VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 8.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

MXP4KE11CAE3

Microsemi Corporation

TVS DIODE 9.4VWM 15.6VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9.4V
• Voltage - Breakdown (Min): 10.5V
• Voltage - Clamping (Max) @ Ipp: 15.6V
• Current - Peak Pulse (10/1000µs): 26A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

MXLP4KE11AE3

Microsemi Corporation

TVS DIODE 9.4VWM 15.6VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9.4V
• Voltage - Breakdown (Min): 10.5V
• Voltage - Clamping (Max) @ Ipp: 15.6V
• Current - Peak Pulse (10/1000µs): 26A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTX1N5641A

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC DO-13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-202AA (DO-13)

封装: DO-13

PM8018C1-F3GI

Microsemi Corporation

PM8018C1 SPCV 16X6G, PB FREE

• Protocol: PCI
• Function: Controller
• Interface: UART
• Standards: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: 1071-BGA, FCBGA
• Supplier Device Package: 1071-FCBGA (27x27)

封装: 1071-BGA, FCBGA