页 11 - Microsemi Corporation 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Microsemi Corporation 产品 - 晶体管 - FET，MOSFET - 单

记录 613
页  11/21
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零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT10M09B2VFRG
Microsemi Corporation

MOSFET N-CH 100V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
封装: TO-247-3 Variant
库存4,544
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
±30V
-
625W (Tc)
9 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT1003RKLLG
Microsemi Corporation

MOSFET N-CH 1000V 4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,056
MOSFET (Metal Oxide)
1000V
4A (Tc)
10V
5V @ 1mA
34nC @ 10V
694pF @ 25V
±30V
-
139W (Tc)
3 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT10035B2LLG
Microsemi Corporation

MOSFET N-CH 1000V 28A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
封装: TO-247-3 Variant
库存4,208
MOSFET (Metal Oxide)
1000V
28A (Tc)
10V
5V @ 2.5mA
186nC @ 10V
5185pF @ 25V
±30V
-
690W (Tc)
350 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APTM120UM70FAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,440
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM65SCAVG
Microsemi Corporation

MOSFET N-CH 1000V 145A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 145A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3250W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: Module
封装: Module
库存2,688
MOSFET (Metal Oxide)
1000V
145A
10V
5V @ 20mA
1068nC @ 10V
28500pF @ 25V
±30V
-
3250W (Tc)
78 mOhm @ 72.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
Module
APTM100UM45FAG
Microsemi Corporation

MOSFET N-CH 1000V 215A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 215A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存3,504
MOSFET (Metal Oxide)
1000V
215A
10V
5V @ 30mA
1602nC @ 10V
42700pF @ 25V
±30V
-
5000W (Tc)
52 mOhm @ 107.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120U10SCAVG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 116A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存3,312
MOSFET (Metal Oxide)
1200V
116A
10V
5V @ 20mA
1100nC @ 10V
28900pF @ 25V
±30V
-
3290W (Tc)
120 mOhm @ 58A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50UM09FAG
Microsemi Corporation

MOSFET N-CH 500V 497A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 497A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 63300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 248.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存4,512
MOSFET (Metal Oxide)
500V
497A
10V
5V @ 30mA
1200nC @ 10V
63300pF @ 25V
±30V
-
5000W (Tc)
10 mOhm @ 248.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120UM70DAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,808
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM60FAG
Microsemi Corporation

MOSFET N-CH 1000V 129A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 129A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 31100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2272W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 64.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存3,552
MOSFET (Metal Oxide)
1000V
129A
10V
5V @ 15mA
1116nC @ 10V
31100pF @ 25V
±30V
-
2272W (Tc)
70 mOhm @ 64.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120U10SAG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 116A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,168
MOSFET (Metal Oxide)
1200V
116A
10V
5V @ 20mA
1100nC @ 10V
28900pF @ 25V
±30V
-
3290W (Tc)
120 mOhm @ 58A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50UM13SAG
Microsemi Corporation

MOSFET N-CH 500V 335A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 335A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 167.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,840
MOSFET (Metal Oxide)
500V
335A
10V
5V @ 20mA
800nC @ 10V
42200pF @ 25V
±30V
-
3290W (Tc)
15 mOhm @ 167.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM65DAG
Microsemi Corporation

MOSFET N-CH 1000V 145A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 145A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3250W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存6,944
MOSFET (Metal Oxide)
1000V
145A
10V
5V @ 20mA
1068nC @ 10V
28500pF @ 25V
±30V
-
3250W (Tc)
78 mOhm @ 72.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20UM04SAG
Microsemi Corporation

MOSFET N-CH 200V 417A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 417A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1560W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 208.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存7,584
MOSFET (Metal Oxide)
200V
417A
10V
5V @ 10mA
560nC @ 10V
28800pF @ 25V
±30V
-
1560W (Tc)
5 mOhm @ 208.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10UM02FAG
Microsemi Corporation

MOSFET N-CH 100V 570A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 570A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1660W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存6,064
MOSFET (Metal Oxide)
100V
570A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1660W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100SKM90G
Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存7,648
MOSFET (Metal Oxide)
1000V
78A
10V
5V @ 10mA
744nC @ 10V
20700pF @ 25V
±30V
-
1250W (Tc)
105 mOhm @ 39A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100DAM90G
Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存7,248
MOSFET (Metal Oxide)
1000V
78A
10V
5V @ 10mA
744nC @ 10V
20700pF @ 25V
±30V
-
1250W (Tc)
105 mOhm @ 39A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20DAM04G
Microsemi Corporation

MOSFET N-CH 200V 372A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,040
MOSFET (Metal Oxide)
200V
372A
10V
5V @ 10mA
560nC @ 10V
28900pF @ 25V
±30V
-
1250W (Tc)
5 mOhm @ 186A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50SKM17G
Microsemi Corporation

MOSFET N-CH 500V 180A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存2,784
MOSFET (Metal Oxide)
500V
180A
10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
±30V
-
1250W (Tc)
20 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50DAM17G
Microsemi Corporation

MOSFET N-CH 500V 180A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,408
MOSFET (Metal Oxide)
500V
180A
10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
±30V
-
1250W (Tc)
20 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10SKM02G
Microsemi Corporation

MOSFET N-CH 100V 495A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存5,312
MOSFET (Metal Oxide)
100V
495A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1250W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10DAM02G
Microsemi Corporation

MOSFET N-CH 100V 495A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存7,200
MOSFET (Metal Oxide)
100V
495A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1250W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APT50MC120JCU2
Microsemi Corporation

MOSFET N-CH 1200V SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 71A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 179nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存5,936
MOSFET (Metal Oxide)
1200V
71A
20V
2.3V @ 1mA (Typ)
179nC @ 20V
2980pF @ 1000V
+25V, -10V
-
300W (Tc)
34 mOhm @ 50A, 20V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APTM20SKM05G
Microsemi Corporation

MOSFET N-CH 200V 317A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存6,384
MOSFET (Metal Oxide)
200V
317A
10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
±30V
-
1136W (Tc)
6 mOhm @ 158.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20DAM05G
Microsemi Corporation

MOSFET N-CH 200V 317A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存6,128
MOSFET (Metal Oxide)
200V
317A
10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
±30V
-
1136W (Tc)
6 mOhm @ 158.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50SKM19G
Microsemi Corporation

MOSFET N-CH 500V 163A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 163A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存2,560
MOSFET (Metal Oxide)
500V
163A
10V
5V @ 10mA
492nC @ 10V
22400pF @ 25V
±30V
-
1136W (Tc)
22.5 mOhm @ 81.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50DAM19G
Microsemi Corporation

MOSFET N-CH 500V 163A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 163A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封装: SP6
库存6,784
MOSFET (Metal Oxide)
500V
163A
10V
5V @ 10mA
492nC @ 10V
22400pF @ 25V
±30V
-
1136W (Tc)
22.5 mOhm @ 81.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC60DAM18CTG
Microsemi Corporation

MOSFET N-CH 600V 143A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 143A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
封装: SP4
库存3,440
MOSFET (Metal Oxide)
600V
143A
10V
3.9V @ 4mA
1036nC @ 10V
28000pF @ 25V
±30V
-
833W (Tc)
18 mOhm @ 71.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTML50UM90R020T1AG
Microsemi Corporation

MOSFET N-CH 500V 52A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 52A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
封装: SP1
库存3,936
MOSFET (Metal Oxide)
500V
52A
10V
4V @ 2.5mA
-
7600pF @ 25V
±30V
-
568W (Tc)
108 mOhm @ 26A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTML60U12R020T1AG
Microsemi Corporation

MOSFET N-CH 600V 45A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
封装: SP1
库存7,504
MOSFET (Metal Oxide)
600V
45A
10V
4V @ 2.5mA
-
7600pF @ 25V
±30V
-
568W (Tc)
150 mOhm @ 22.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1