页 62 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT58L1MY18DF-7-5	Micron Technology Inc.	IC SRAM 18MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Standard	18Mbit	Parallel	133 MHz	-	4.2 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT53E512M64D2HJ-046-AIT-B	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	32Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MTFC64GAZAQHD-IT	Micron Technology Inc.	IC FLASH 512GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	库存5,874	FLASH	FLASH - NAND	512Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MTFC64GAZAQHD-WT	Micron Technology Inc.	EMMC 512G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 512Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	512Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-25°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MT62F512M64D4BG-031-WT-B	Micron Technology Inc.	LPDDR5 32G 512MX64 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	-	-	-
MT29F512G08EBHAFJ4-3R-A	Micron Technology Inc.	IC FLASH 512GBIT PAR 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MT62F512M64D4EK-031-AUT-B	Micron Technology Inc.	LPDDR5 32G 512MX64 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	-	-40°C ~ 125°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MT62F8D1DCL-DC-X-TR	Micron Technology Inc.	LPDDR5 FBGA Y42M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1536M32D4DS-023-WT-ES-B-TR	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29VZZZAD9FQKSM-046-W-12I-TR	Micron Technology Inc.	UMCP 1056G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT58L256L18F1T-10ITTR	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 66 MHz Write Cycle Time - Word, Page: - Access Time: 10 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	66 MHz	-	10 ns	3.135V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT53E2G64D8EG-046-WT-A	Micron Technology Inc.	DRAM LPDDR4 128G 2GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E2G64D8EG-046-WT-C	Micron Technology Inc.	DRAM LPDDR4 128G 2GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E4DCDT-DC-TR	Micron Technology Inc.	LPDDR4 12G QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT61K512M32KPA-18-E	Micron Technology Inc.	GDDR6 16GBIT 32 180/252 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 16Gbit Memory Interface: POD_135 Clock Frequency: 9 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3095V ~ 1.391V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	封装: -	Request a Quote	DRAM	SGRAM - GDDR6	16Gbit	POD_135	9 GHz	-	-	1.3095V ~ 1.391V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
MT58L64L32DT-7-5TR	Micron Technology Inc.	IC SRAM 2MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM - Standard	2Mbit	Parallel	133 MHz	-	4 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT53E4D1ADE-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F512M32D1DS-023-AAT-E	Micron Technology Inc.	LPDDR5 16GBIT 32 315/315 TFBGA 1 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53D384M32D2DS-053-AAT-E-TR	Micron Technology Inc.	IC DRAM 12GBIT 1.866GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gbit Memory Interface: - Clock Frequency: 1.866 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	12Gbit	-	1.866 GHz	-	-	1.1V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT61K512M32KPA-16-C	Micron Technology Inc.	GDDR6 16G 512MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 16Gbit Memory Interface: POD_135 Clock Frequency: 8 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3095V ~ 1.3905V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	封装: -	库存3,732	DRAM	SGRAM - GDDR6	16Gbit	POD_135	8 GHz	-	-	1.3095V ~ 1.3905V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
MT61K512M32KPA-16-E	Micron Technology Inc.	GDDR6 16GBIT 32 180/252 TFBGA 2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT61K512M32KPA-14-C	Micron Technology Inc.	GDDR6 16G 512MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 16Gbit Memory Interface: POD_135 Clock Frequency: 7 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3095V ~ 1.3905V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	封装: -	库存3,759	DRAM	SGRAM - GDDR6	16Gbit	POD_135	7 GHz	-	-	1.3095V ~ 1.3905V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
M29F800FB5AM6F2	Micron Technology Inc.	FLASH NOR 8Mb 5v SOIC (Btm Bt-Bl Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC Supplier Device Package: 44-SOIC (0.496", 12.60mm Width)	封装: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	Parallel	-	55ns	55 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	44-SOIC	44-SOIC (0.496", 12.60mm Width)
MT62F3G32D8DV-026-WT-B-TR	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	-	-	-
MT25QU128ABB8E57-CSIT	Micron Technology Inc.	IC FLASH 128MBIT SPI/QUAD 166MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: 5 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O	166 MHz	1.8ms	5 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	-	-	-
MT62F2G64D8EK-023-FAAT-C-TR	Micron Technology Inc.	LPDDR5 128GBIT 64 441/441 TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 128Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	128Gbit	Parallel	4.266 GHz	-	-	1.05V	-40°C ~ 105°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MT62F4DCCA-DC	Micron Technology Inc.	LPDDR5 QDP Y4BM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT40A2G8JE-062E-AIT-E-TR	Micron Technology Inc.	DDR4 16G 2GX8 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x11)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	POD	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x11)
MT40A512M16TD-062E-AIT-R-TR	Micron Technology Inc.	IC DRAM 4GBIT PARALLEL 96FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
MT53E384M64D4NK-046-WT-E-TR	Micron Technology Inc.	IC DRAM 24GBIT 2.133GHZ FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	24Gbit	-	2.133 GHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-

MT58L1MY18DF-7-5

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

Request a Quote

SRAM

SRAM - Standard

18Mbit

Parallel

133 MHz

-

4.2 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT53E512M64D2HJ-046-AIT-B

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

32Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MTFC64GAZAQHD-IT

Micron Technology Inc.

IC FLASH 512GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

库存5,874

FLASH

FLASH - NAND

512Gbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MTFC64GAZAQHD-WT

Micron Technology Inc.

EMMC 512G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 512Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

512Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-25°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MT62F512M64D4BG-031-WT-B

Micron Technology Inc.

LPDDR5 32G 512MX64 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

-

MT29F512G08EBHAFJ4-3R-A

Micron Technology Inc.

IC FLASH 512GBIT PAR 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

512Gbit

Parallel

333 MHz

-

2.5V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MT62F512M64D4EK-031-AUT-B

Micron Technology Inc.

LPDDR5 32G 512MX64 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

-40°C ~ 125°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MT62F8D1DCL-DC-X-TR

Micron Technology Inc.

LPDDR5 FBGA Y42M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT62F1536M32D4DS-023-WT-ES-B-TR

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT29VZZZAD9FQKSM-046-W-12I-TR

Micron Technology Inc.

UMCP 1056G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT58L256L18F1T-10ITTR

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 66 MHz
Write Cycle Time - Word, Page: -
Access Time: 10 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

Request a Quote

SRAM

SRAM - Standard

4Mbit

Parallel

66 MHz

-

10 ns

3.135V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT53E2G64D8EG-046-WT-A

Micron Technology Inc.

DRAM LPDDR4 128G 2GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT53E2G64D8EG-046-WT-C

Micron Technology Inc.

DRAM LPDDR4 128G 2GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT53E4DCDT-DC-TR

Micron Technology Inc.

LPDDR4 12G QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT61K512M32KPA-18-E

Micron Technology Inc.

GDDR6 16GBIT 32 180/252 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 16Gbit
Memory Interface: POD_135
Clock Frequency: 9 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3095V ~ 1.391V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

封装: -

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DRAM

SGRAM - GDDR6

16Gbit

POD_135

9 GHz

-

1.3095V ~ 1.391V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

MT58L64L32DT-7-5TR

Micron Technology Inc.

IC SRAM 2MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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SRAM

SRAM - Standard

2Mbit

Parallel

133 MHz

-

4 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT53E4D1ADE-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT62F512M32D1DS-023-AAT-E

Micron Technology Inc.

LPDDR5 16GBIT 32 315/315 TFBGA 1

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT53D384M32D2DS-053-AAT-E-TR

Micron Technology Inc.

IC DRAM 12GBIT 1.866GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gbit
Memory Interface: -
Clock Frequency: 1.866 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4

12Gbit

-

1.866 GHz

-

1.1V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT61K512M32KPA-16-C

Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 16Gbit
Memory Interface: POD_135
Clock Frequency: 8 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3095V ~ 1.3905V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

封装: -

库存3,732

DRAM

SGRAM - GDDR6

16Gbit

POD_135

8 GHz

-

1.3095V ~ 1.3905V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

MT61K512M32KPA-16-E

Micron Technology Inc.

GDDR6 16GBIT 32 180/252 TFBGA 2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT61K512M32KPA-14-C

Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 16Gbit
Memory Interface: POD_135
Clock Frequency: 7 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3095V ~ 1.3905V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

封装: -

库存3,759

DRAM

SGRAM - GDDR6

16Gbit

POD_135

7 GHz

-

1.3095V ~ 1.3905V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

M29F800FB5AM6F2

Micron Technology Inc.

FLASH NOR 8Mb 5v SOIC (Btm Bt-Bl

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC
Supplier Device Package: 44-SOIC (0.496", 12.60mm Width)

封装: -

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FLASH

FLASH - NOR

8Mbit

Parallel

-

55ns

55 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

44-SOIC

44-SOIC (0.496", 12.60mm Width)

MT62F3G32D8DV-026-WT-B-TR

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

-

MT25QU128ABB8E57-CSIT

Micron Technology Inc.

IC FLASH 128MBIT SPI/QUAD 166MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O

166 MHz

1.8ms

5 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

-

MT62F2G64D8EK-023-FAAT-C-TR

Micron Technology Inc.

LPDDR5 128GBIT 64 441/441 TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 128Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

封装: -

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DRAM

SDRAM - Mobile LPDDR5

128Gbit

Parallel

4.266 GHz

-

1.05V

-40°C ~ 105°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MT62F4DCCA-DC

Micron Technology Inc.

LPDDR5 QDP Y4BM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MT40A2G8JE-062E-AIT-E-TR

Micron Technology Inc.

DDR4 16G 2GX8 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x11)

封装: -

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DRAM

SDRAM - DDR4

16Gbit

POD

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x11)

MT40A512M16TD-062E-AIT-R-TR

Micron Technology Inc.

IC DRAM 4GBIT PARALLEL 96FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

封装: -

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-

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

MT53E384M64D4NK-046-WT-E-TR

Micron Technology Inc.

IC DRAM 24GBIT 2.133GHZ FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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DRAM

SDRAM - Mobile LPDDR4

24Gbit

-

2.133 GHz

-

1.1V

-30°C ~ 85°C (TC)

-