页 358 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT25QL01GBBA8E12E01-2SIT TR	Micron Technology Inc.	IC FLASH 1GBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存5,472	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
PF58F0095HVT0B0A	Micron Technology Inc.	NOR FLASH 512MX16 PLASTIC PBF LF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,440	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M64D4EZ-062 WT:C TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,312	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4EZ-062 WT:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,592	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4EZ-062 WT ES:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,448	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M32D2GZ-062 AIT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,072	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53B4DBEZ-DC TR	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,336	-	-	-	-	-	-	-	-	-	-	-	-
MT53B4DAEZ-DC TR	Micron Technology Inc.	LPDDR4 24G 384MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,832	-	-	-	-	-	-	-	-	-	-	-	-
MT53B192M32D1SG-062 WT ES:A TR	Micron Technology Inc.	IC SDRAM 6GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 6Gb (192M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,192	DRAM	SDRAM - Mobile LPDDR4	6Gb (192M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT42L64M64D2LL-18 WT:C TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,016	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	-	-	-
MT42L64M64D2LL-18 IT:C TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,688	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
MT42L64M32D1TK-18 IT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,320	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
MT42L64M32D1TK-18 AAT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,056	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 105°C (TC)	-	-	-
MT42L64M32D1LF-18 IT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-TFBGA Supplier Device Package: 168-FBGA (12x12)	封装: 168-TFBGA	库存4,240	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	168-TFBGA	168-FBGA (12x12)
MT42L32M16D1FE-25 IT:A TR	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	封装: 121-WFBGA	库存2,304	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)
MT42L32M16D1AB-25 IT:A TR	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	封装: 121-WFBGA	库存5,936	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)
MT42L256M16D1GU-18 WT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-WFBGA Supplier Device Package: 134-FBGA (10x11.5)	封装: 134-WFBGA	库存4,768	DRAM	SDRAM - Mobile LPDDR2	4Gb (256M x 16)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	134-WFBGA	134-FBGA (10x11.5)
MT42L128M64D2MC-18 IT:A TR	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 240FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 240-WFBGA Supplier Device Package: 240-FBGA (14x14)	封装: 240-WFBGA	库存2,544	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	240-WFBGA	240-FBGA (14x14)
MT42L128M32D1TK-25 IT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封装: 138-UFBGA, WLBGA	库存6,608	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1TK-25 AIT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封装: 138-UFBGA, WLBGA	库存3,952	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1TK-25 AAT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封装: 138-UFBGA, WLBGA	库存6,416	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 105°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1LF-18 WT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	封装: 168-WFBGA	库存4,304	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
MT41K2G4SN-107:A TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (2G x 4) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x13.2)	封装: 78-TFBGA	库存6,272	DRAM	SDRAM - DDR3L	8Gb (2G x 4)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	78-TFBGA	78-FBGA (9x13.2)
MT38W201DAA033JZZI.X68 TR	Micron Technology Inc.	MCP 5MX16 PLASTIC 2.0V IND TEMP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,416	-	-	-	-	-	-	-	-	-	-	-	-
MT29F64G08CBEDBJ4-12IT:D TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,608	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F64G08CBEDBJ4-12:D TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,472	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08ABCBBH6-6:B TR	Micron Technology Inc.	IC FLASH 64GBIT 167MHZ 152VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,016	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EMCBBJ5-10:B TR	Micron Technology Inc.	IC FLASH 512GBIT 100MHZ 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,040	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CUEDBJ6-12IT:D TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,392	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08CUEDBJ6-12:D TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,320	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-

MT25QL01GBBA8E12E01-2SIT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存5,472

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

PF58F0095HVT0B0A

Micron Technology Inc.

NOR FLASH 512MX16 PLASTIC PBF LF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,440

-

MT53B512M64D4EZ-062 WT:C TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,312

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M64D4EZ-062 WT:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,592

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M64D4EZ-062 WT ES:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,448

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M32D2GZ-062 AIT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,072

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT53B4DBEZ-DC TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,336

-

MT53B4DAEZ-DC TR

Micron Technology Inc.

LPDDR4 24G 384MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,832

-

MT53B192M32D1SG-062 WT ES:A TR

Micron Technology Inc.

IC SDRAM 6GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 6Gb (192M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,192

DRAM

SDRAM - Mobile LPDDR4

6Gb (192M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT42L64M64D2LL-18 WT:C TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,016

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

-

MT42L64M64D2LL-18 IT:C TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,688

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

MT42L64M32D1TK-18 IT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,320

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

MT42L64M32D1TK-18 AAT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,056

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-40°C ~ 105°C (TC)

-

MT42L64M32D1LF-18 IT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TFBGA
Supplier Device Package: 168-FBGA (12x12)

封装: 168-TFBGA

库存4,240

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

168-TFBGA

168-FBGA (12x12)

MT42L32M16D1FE-25 IT:A TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

封装: 121-WFBGA

库存2,304

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)

MT42L32M16D1AB-25 IT:A TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

封装: 121-WFBGA

库存5,936

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)

MT42L256M16D1GU-18 WT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-WFBGA
Supplier Device Package: 134-FBGA (10x11.5)

封装: 134-WFBGA

库存4,768

DRAM

SDRAM - Mobile LPDDR2

4Gb (256M x 16)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

134-WFBGA

134-FBGA (10x11.5)

MT42L128M64D2MC-18 IT:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 240FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 240-WFBGA
Supplier Device Package: 240-FBGA (14x14)

封装: 240-WFBGA

库存2,544

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

240-WFBGA

240-FBGA (14x14)

MT42L128M32D1TK-25 IT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封装: 138-UFBGA, WLBGA

库存6,608

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1TK-25 AIT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封装: 138-UFBGA, WLBGA

库存3,952

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1TK-25 AAT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封装: 138-UFBGA, WLBGA

库存6,416

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-40°C ~ 105°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1LF-18 WT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

封装: 168-WFBGA

库存4,304

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

MT41K2G4SN-107:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (2G x 4)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x13.2)

封装: 78-TFBGA

库存6,272

DRAM

SDRAM - DDR3L

8Gb (2G x 4)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

78-TFBGA

78-FBGA (9x13.2)

MT38W201DAA033JZZI.X68 TR

Micron Technology Inc.

MCP 5MX16 PLASTIC 2.0V IND TEMP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,416

-

MT29F64G08CBEDBJ4-12IT:D TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,608

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F64G08CBEDBJ4-12:D TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,472

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F64G08ABCBBH6-6:B TR

Micron Technology Inc.

IC FLASH 64GBIT 167MHZ 152VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,016

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08EMCBBJ5-10:B TR

Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,040

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08CUEDBJ6-12IT:D TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,392

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F512G08CUEDBJ6-12:D TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,320

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-