页 896 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  896/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
5962-9459903MXA
Cypress Semiconductor Corp

IC SRAM NON-VOLATILE

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-DIP
封装: 28-DIP (0.300", 7.62mm)
库存2,816
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-DIP
IS65WV1288DBLL-45TLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 45NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
封装: 32-TFSOP (0.724", 18.40mm Width)
库存2,896
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.5 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
CY7C1462SV25-200AXCT
Cypress Semiconductor Corp

IC SRAM 36MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.2ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存5,904
SRAM
SRAM - Synchronous
36Mb (2M x 18)
Parallel
200MHz
-
3.2ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT28F004B3VG-8 B
Micron Technology Inc.

IC FLASH 4MBIT 80NS 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 80ns
  • Access Time: 80ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP I
封装: 40-TFSOP (0.724", 18.40mm Width)
库存2,016
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
80ns
80ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP I
CY14B104NA-BA45XET
Cypress Semiconductor Corp

NON VOLATILE SRAMS

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,536
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (256K x 16)
Parallel
-
45ns
45ns
3 V ~ 3.6 V
-40°C ~ 125°C (TA)
-
-
-
JS28F512P30TFA
Micron Technology Inc.

IC FLASH 512MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
封装: 56-TFSOP (0.724", 18.40mm Width)
库存3,104
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
40MHz
110ns
110ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
IS42VM16800H-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存5,280
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
AS6C4016-55BIN
Alliance Memory, Inc.

IC SRAM 4MBIT 55NS 48TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封装: 48-LFBGA
库存5,616
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
55ns
55ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-TFBGA (6x8)
MT29F1G08ABADAH4-IT:D TR
Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封装: 63-VFBGA
库存7,184
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
S27KS0641DPBHB023
Cypress Semiconductor Corp

NOR

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 40ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,768
DRAM
DRAM
64Mb (8M x 8)
Parallel
166MHz
-
40ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
-
-
-
MX29LV400CBXEI-90G
Macronix

IC FLASH 4MBIT 90NS 48LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA, CSPBGA
  • Supplier Device Package: 48-LFBGA, CSP (6x8)
封装: 48-LFBGA, CSPBGA
库存4,768
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA, CSPBGA
48-LFBGA, CSP (6x8)
DS24L65P+T
Maxim Integrated

IC EEPROM 64BIT 1WIRE 6TSOC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512b (32 Bytes x 2 pages)
  • Memory Interface: 1-Wire?
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
封装: 6-LSOJ (0.148", 3.76mm Width)
库存2,080
EEPROM
EEPROM
512b (32 Bytes x 2 pages)
1-Wire?
400kHz
-
-
1.71 V ~ 1.89 V
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
S-25C010A0I-T8T1U
SII Semiconductor Corporation

IC EEPROM 1KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存7,120
EEPROM
EEPROM
1Kb (128 x 8)
SPI
5MHz
4ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BR24G02FJ-3AGTE2
Rohm Semiconductor

IC EEPROM 2KBIT 400KHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,552
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
MX29GL320EBXEI-70G
Macronix

IC FLASH 32MBIT 70NS 48LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA, CSPBGA
  • Supplier Device Package: 48-LFBGA, CSP (6x8)
封装: 48-LFBGA, CSPBGA
库存6,416
FLASH
FLASH - NOR
32Mb (4M x 8)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA, CSPBGA
48-LFBGA, CSP (6x8)
hot FM25040B-GTR
Cypress Semiconductor Corp

IC FRAM 4KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,139,384
FRAM
FRAM (Ferroelectric RAM)
4Kb (512 x 8)
SPI
20MHz
-
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS43DR16640C-25DBLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
封装: 84-TFBGA
库存7,552
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
IS61NLF25636B-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 117MHZ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
封装: 100-LQFP
库存7,008
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
S29GL256P90FFCR10
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
封装: 64-LBGA
库存2,000
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
S40135MM270B0S010
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,168
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M64D4NZ-046 WT ES:E TR
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,176
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT40A512M8SA-062E:F
Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (7.5x11)
封装: 78-TFBGA
库存5,120
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.6GHz
-
13.75ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (7.5x11)
GS82582Q18GE-333I
GSI Technology Inc.

IC SRAM 288MBIT PAR 165FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 288Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FPBGA (15x17)
封装: -
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SRAM
SRAM - Quad Port, Synchronous
288Mbit
Parallel
333 MHz
-
-
1.7V ~ 1.9V
-40°C ~ 100°C (TJ)
Surface Mount
165-LBGA
165-FPBGA (15x17)
MT62F1536M32D4DS-023-FAAT-C
Micron Technology Inc.

LPDDR5 48GBIT 32 315/315 TFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 48Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 315-TFBGA
  • Supplier Device Package: 315-TFBGA (12.4x15)
封装: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5X
48Gbit
LVSTL
4.266 GHz
-
-
1.01V ~ 1.12V
-40°C ~ 105°C (TC)
Surface Mount
315-TFBGA
315-TFBGA (12.4x15)
W25M02GVZEIG
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
封装: -
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FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O
104 MHz
700µs
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
CY7C197-35PC
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP (0.300", 7.62mm)
  • Supplier Device Package: 24-PDIP
封装: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
35ns
35 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
24-DIP (0.300", 7.62mm)
24-PDIP
W25N02JWTBIF-TR
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
封装: -
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FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O, QPI, DTR
166 MHz
700µs
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)
MT29F1T08EBLCHD4-R-C-TR
Micron Technology Inc.

TLC 1T 128GX8 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SM662PXB-BDST
Silicon Motion, Inc.

IC FLASH 256GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 256Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
封装: -
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FLASH
FLASH - NAND (TLC)
256Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
W25Q80DVUXAE
Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 30µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封装: -
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FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O
104 MHz
30µs, 3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)