页 884 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S29GL512P11TFIV20	Cypress Semiconductor Corp	IC FLASH 512MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封装: 56-TFSOP (0.724", 18.40mm Width)	库存4,208	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
S99-50249D	Cypress Semiconductor Corp	IC MEM 1GB FLASH 56TSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,040	-	-	-	-	-	-	-	-	-	-	-	-
MT49H16M36FM-18:B	Micron Technology Inc.	IC RLDRAM 576MBIT 533MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	封装: 144-TFBGA	库存72,000	DRAM	DRAM	576Mb (16M x 36)	Parallel	533MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
CAT24C16VP2I-GT3	ON Semiconductor	IC EEPROM 16KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	封装: 8-WFDFN Exposed Pad	库存19,260	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
STK11C68-5K55M	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 55NS 28CDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封装: 28-CDIP (0.300", 7.62mm)	库存13,080	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
CY7C1460AV25-200BZI	Cypress Semiconductor Corp	IC SRAM 36MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.2ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存2,944	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	200MHz	-	3.2ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
AT24C08-10PI-2.7	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存5,744	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	900ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
7027L20PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存5,968	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
N25Q128A13ESF40F TR	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封装: 16-SOIC (0.295", 7.50mm Width)	库存6,864	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
25AA010A-I/MS	Microchip Technology	IC EEPROM 1KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存22,440	EEPROM	EEPROM	1Kb (128 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
BR24C16A-10TU-1.8	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存4,800	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CYDM256B16-55BVXI	Cypress Semiconductor Corp	IC SRAM 256KBIT 55NS 100VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, MoBL Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-VFBGA Supplier Device Package: 100-VFBGA (6x6)	封装: 100-VFBGA	库存13,092	SRAM	SRAM - Dual Port, MoBL	256Kb (16K x 16)	Parallel	-	55ns	55ns	1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V	-40°C ~ 85°C (TA)	Surface Mount	100-VFBGA	100-VFBGA (6x6)
S25FL256SDPBHVC10	Cypress Semiconductor Corp	IC 256M FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封装: 24-TBGA	库存4,560	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
DS1265AB-70IND+	Maxim Integrated	IC NVSRAM 8MBIT 70NS 36EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 36-DIP Module (0.600", 15.24mm) Supplier Device Package: 36-EDIP	封装: 36-DIP Module (0.600", 15.24mm)	库存7,408	NVSRAM	NVSRAM (Non-Volatile SRAM)	8Mb (1M x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Through Hole	36-DIP Module (0.600", 15.24mm)	36-EDIP
FM25V01A-GTR	Cypress Semiconductor Corp	IC FRAM 128KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存300,984	FRAM	FRAM (Ferroelectric RAM)	128Kb (16K x 8)	SPI	40MHz	-	-	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M24C16-DRMN3TP/K	STMicroelectronics	IC EEPROM 16KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 4ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,456	EEPROM	EEPROM	16Kb (2K x 8)	I2C	1MHz	4ms	450ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
S25FL512SAGBHIC10	Cypress Semiconductor Corp	IC FLASH 512MBIT 133MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封装: 24-TBGA	库存7,308	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
AS4C32M32MD1A-5BINTR	Alliance Memory, Inc.	IC DRAM 1G PARALLEL 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-FBGA (8x13)	封装: 90-VFBGA	库存3,600	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	200MHz	15ns	5ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TJ)	Surface Mount	90-VFBGA	90-FBGA (8x13)
MT53D4DCTW-DC TR	Micron Technology Inc.	LPDDR4 0 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,192	-	-	-	-	-	-	-	-	-	-	-	-
MT29RZ1CVCZZHGTN-18 W.85H	Micron Technology Inc.	IC FLASH RAM 1G PARALLEL 533MHZ Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, DRAM - LPDDR2 Memory Size: 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,048	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)	Parallel	533MHz	-	-	1.8V	-25°C ~ 85°C (TA)	-	-	-
AM29DL800BT-120WBC	Advanced Micro Devices	IC FLASH 8MBIT PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x9)	封装: -	Request a Quote	FLASH	FLASH	8Mbit	Parallel	-	120ns	120 ns	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x9)
CAT1023WI-25-T3	onsemi	CAT1023 - SUPERVISORY CIRCUIT WI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
R1QEA7236ABB-20IB0	Renesas Electronics Corporation	STANDARD SRAM, 2MX36, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS46LQ32128A-062TBLA1	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 4G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
MT61K512M32KPA-21-U-TR	Micron Technology Inc.	GDDR6 16G 512MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 16Gbit Memory Interface: POD_135 Clock Frequency: 10.5 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3095V ~ 1.3905V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	封装: -	Request a Quote	DRAM	SGRAM - GDDR6	16Gbit	POD_135	10.5 GHz	-	-	1.3095V ~ 1.3905V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
MTC20C2085S1EC56BAZ	Micron Technology Inc.	DDR5 32GB EUDIMM VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AS4C32M16D2C-25BCNTR	Alliance Memory, Inc.	DRAM DDR2, 512MB, 32M X 16, 1.8V Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 400 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR2	512Mbit	SSTL_18	400 MHz	15ns	400 ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
MT29F4T08GMLBEJ4-B-TR	Micron Technology Inc.	IC FLASH 4TBIT PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	封装: -	Request a Quote	FLASH	FLASH - NAND	4Tbit	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
16-4370-01	Cypress Semiconductor Corp	IC GATE NAND Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPD43256BGU-70LL-E2-A	Renesas Electronics Corporation	STANDARD SRAM, 32KX8, 70NS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.40mm Width) Supplier Device Package: 28-SOP	封装: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous	256Kbit	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.330", 8.40mm Width)	28-SOP

S29GL512P11TFIV20

Cypress Semiconductor Corp

IC FLASH 512MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

库存4,208

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

S99-50249D

Cypress Semiconductor Corp

IC MEM 1GB FLASH 56TSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,040

-

MT49H16M36FM-18:B

Micron Technology Inc.

IC RLDRAM 576MBIT 533MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

封装: 144-TFBGA

库存72,000

DRAM

576Mb (16M x 36)

Parallel

533MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

CAT24C16VP2I-GT3

ON Semiconductor

IC EEPROM 16KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

封装: 8-WFDFN Exposed Pad

库存19,260

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

STK11C68-5K55M

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 55NS 28CDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封装: 28-CDIP (0.300", 7.62mm)

库存13,080

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

CY7C1460AV25-200BZI

Cypress Semiconductor Corp

IC SRAM 36MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存2,944

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

200MHz

-

3.2ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

AT24C08-10PI-2.7

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存5,744

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

900ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

7027L20PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存5,968

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

N25Q128A13ESF40F TR

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封装: 16-SOIC (0.295", 7.50mm Width)

库存6,864

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

25AA010A-I/MS

Microchip Technology

IC EEPROM 1KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存22,440

EEPROM

1Kb (128 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

BR24C16A-10TU-1.8

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存4,800

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CYDM256B16-55BVXI

Cypress Semiconductor Corp

IC SRAM 256KBIT 55NS 100VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Supplier Device Package: 100-VFBGA (6x6)

封装: 100-VFBGA

库存13,092

SRAM

SRAM - Dual Port, MoBL

256Kb (16K x 16)

Parallel

-

55ns

1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V

-40°C ~ 85°C (TA)

Surface Mount

100-VFBGA

100-VFBGA (6x6)

S25FL256SDPBHVC10

Cypress Semiconductor Corp

IC 256M FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封装: 24-TBGA

库存4,560

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

DS1265AB-70IND+

Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 36-DIP Module (0.600", 15.24mm)
Supplier Device Package: 36-EDIP

封装: 36-DIP Module (0.600", 15.24mm)

库存7,408

NVSRAM

NVSRAM (Non-Volatile SRAM)

8Mb (1M x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Through Hole

36-DIP Module (0.600", 15.24mm)

36-EDIP

FM25V01A-GTR

Cypress Semiconductor Corp

IC FRAM 128KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存300,984

FRAM

FRAM (Ferroelectric RAM)

128Kb (16K x 8)

SPI

40MHz

-

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M24C16-DRMN3TP/K

STMicroelectronics

IC EEPROM 16KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,456

EEPROM

16Kb (2K x 8)

I2C

1MHz

4ms

450ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

S25FL512SAGBHIC10

Cypress Semiconductor Corp

IC FLASH 512MBIT 133MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封装: 24-TBGA

库存7,308

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

AS4C32M32MD1A-5BINTR

Alliance Memory, Inc.

IC DRAM 1G PARALLEL 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)

封装: 90-VFBGA

库存3,600

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

200MHz

15ns

5ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TJ)

Surface Mount

90-VFBGA

90-FBGA (8x13)

MT53D4DCTW-DC TR

Micron Technology Inc.

LPDDR4 0 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,192

-

MT29RZ1CVCZZHGTN-18 W.85H

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL 533MHZ

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,048

FLASH, RAM

FLASH - NAND, DRAM - LPDDR2

1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)

Parallel

533MHz

-

1.8V

-25°C ~ 85°C (TA)

-

AM29DL800BT-120WBC

Advanced Micro Devices

IC FLASH 8MBIT PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x9)

封装: -

Request a Quote

FLASH

8Mbit

Parallel

-

120ns

120 ns

2.7V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x9)

CAT1023WI-25-T3

onsemi

CAT1023 - SUPERVISORY CIRCUIT WI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

R1QEA7236ABB-20IB0

Renesas Electronics Corporation

STANDARD SRAM, 2MX36, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IS46LQ32128A-062TBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

MT61K512M32KPA-21-U-TR

Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 16Gbit
Memory Interface: POD_135
Clock Frequency: 10.5 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3095V ~ 1.3905V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

封装: -

Request a Quote

DRAM

SGRAM - GDDR6

16Gbit

POD_135

10.5 GHz

-

1.3095V ~ 1.3905V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

MTC20C2085S1EC56BAZ

Micron Technology Inc.

DDR5 32GB EUDIMM VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

AS4C32M16D2C-25BCNTR

Alliance Memory, Inc.

DRAM DDR2, 512MB, 32M X 16, 1.8V

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR2

512Mbit

SSTL_18

400 MHz

15ns

400 ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

MT29F4T08GMLBEJ4-B-TR

Micron Technology Inc.

IC FLASH 4TBIT PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

封装: -

Request a Quote

FLASH

FLASH - NAND

4Tbit

Parallel

-

2.5V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

16-4370-01

Cypress Semiconductor Corp

IC GATE NAND

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

UPD43256BGU-70LL-E2-A

Renesas Electronics Corporation

STANDARD SRAM, 32KX8, 70NS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Supplier Device Package: 28-SOP

封装: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous

256Kbit

Parallel

-

70ns

70 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.330", 8.40mm Width)

28-SOP