页 847 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RMLV0414EGSB-4S2#HA1	Renesas Electronics America	IC SRAM 4MBIT 45NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,024	SRAM	SRAM	4Mb (256K x 16)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT47H128M8CF-3 IT:H	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	封装: 60-TFBGA	库存170,400	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
TE28F640P30B85A	Micron Technology Inc.	IC FLASH 64MBIT 85NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封装: 56-TFSOP (0.724", 18.40mm Width)	库存7,984	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	40MHz	85ns	85ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
CY7C1021BN-12ZXC	Cypress Semiconductor Corp	IC SRAM 1MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,696	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT25020A-10PU-1.8	Microchip Technology	IC EEPROM 2KBIT 20MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存6,976	EEPROM	EEPROM	2Kb (256 x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT49F001T-90TI	Microchip Technology	IC FLASH 1MBIT 90NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封装: 32-TFSOP (0.724", 18.40mm Width)	库存6,688	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
NM27C512V90	Fairchild/ON Semiconductor	IC OTP 512KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存6,752	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC
71V67803S150BQ8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存6,480	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
S29PL127J60BAW003	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,064	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	-	-	-
AS4C16M16SA-6BANTR	Alliance Memory, Inc.	IC SDRAM 256MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: 54-TFBGA	库存4,528	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	12ns	5ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
W978H6KBQX2I	Winbond Electronics	IC SDRAM 256MBIT 400MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	封装: 168-WFBGA	库存4,464	DRAM	SDRAM - Mobile LPDDR2	256Mb (16M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
N25Q128A13ESFA0F TR	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封装: 16-SOIC (0.295", 7.50mm Width)	库存3,968	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
AS6C2008A-55TIN	Alliance Memory, Inc.	IC SRAM 2MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	封装: 32-TFSOP (0.724", 18.40mm Width)	库存6,336	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
W947D6HBHX6E TR	Winbond Electronics	IC SDRAM 128MBIT 166MHZ 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-VFBGA (8x9)	封装: 60-TFBGA	库存2,400	DRAM	SDRAM - Mobile LPDDR	128Mb (8M x 16)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-VFBGA (8x9)
CY62137EV30LL-45ZSXI	Cypress Semiconductor Corp	IC SRAM 2MBIT 45NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存8,136	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
M24128-DRMN3TP/K	STMicroelectronics	IC EEPROM 128KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 4ms Access Time: 450ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,216	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	4ms	450ns	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BR93G86NUX-3BTTR	Rohm Semiconductor	IC EEPROM 16KBIT 3MHZ 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	封装: 8-UFDFN Exposed Pad	库存28,194	EEPROM	EEPROM	16Kb (1K x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
FM25V02A-G	Cypress Semiconductor Corp	IC FRAM 256KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,942	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	SPI	40MHz	-	-	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S29GL256S10TFB013	Cypress Semiconductor Corp	IC 256 MB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,112	-	-	-	-	-	-	-	-	-	-	-	-
S27KL0641DABHV030	Cypress Semiconductor Corp	IC 64 MB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,456	-	-	-	-	-	-	-	-	-	-	-	-
S29GL064N90BFI043	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封装: 48-VFBGA	库存3,232	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
MT29F1T08EEHAFJ4-3T:A	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,472	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
40060455	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
70V24S17PFG8	Renesas Electronics Corporation	70V24S17PFG8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q512JVEIN	Winbond Electronics	SPIFLASH, 512M-BIT, 4KB UNIFORM Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3.5ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI	133 MHz	3.5ms	6.5 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS25LP512M-RMLE-TY	DeLorme	IC FLASH 512MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	50µs, 1ms	-	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
10282417	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS66WVS1M8BLL-104NLI-TR	ISSI, Integrated Silicon Solution Inc	8Mb, SerialRAM, 2.7V-3.6V, 104MH Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 8Mbit Memory Interface: SPI, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	8Mbit	SPI, QPI	104 MHz	-	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GS82582TT38GE-500I	GSI Technology Inc.	IC SRAM 288MBIT PAR 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 288Mbit Memory Interface: Parallel Clock Frequency: 500 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x17)	封装: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	288Mbit	Parallel	500 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x17)
MT40A2G8AG-062E-AIT-F-TR	Micron Technology Inc.	DDR4 16G 2GX8 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	Parallel	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	-	-	-

RMLV0414EGSB-4S2#HA1

Renesas Electronics America

IC SRAM 4MBIT 45NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,024

SRAM

4Mb (256K x 16)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT47H128M8CF-3 IT:H

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

封装: 60-TFBGA

库存170,400

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

TE28F640P30B85A

Micron Technology Inc.

IC FLASH 64MBIT 85NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

库存7,984

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

40MHz

85ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

CY7C1021BN-12ZXC

Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,696

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT25020A-10PU-1.8

Microchip Technology

IC EEPROM 2KBIT 20MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存6,976

EEPROM

2Kb (256 x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT49F001T-90TI

Microchip Technology

IC FLASH 1MBIT 90NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

库存6,688

FLASH

1Mb (128K x 8)

Parallel

-

50µs

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

NM27C512V90

Fairchild/ON Semiconductor

IC OTP 512KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存6,752

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC

71V67803S150BQ8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存6,480

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

S29PL127J60BAW003

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,064

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

-

AS4C16M16SA-6BANTR

Alliance Memory, Inc.

IC SDRAM 256MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

库存4,528

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

12ns

5ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

W978H6KBQX2I

Winbond Electronics

IC SDRAM 256MBIT 400MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

封装: 168-WFBGA

库存4,464

DRAM

SDRAM - Mobile LPDDR2

256Mb (16M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

N25Q128A13ESFA0F TR

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封装: 16-SOIC (0.295", 7.50mm Width)

库存3,968

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

AS6C2008A-55TIN

Alliance Memory, Inc.

IC SRAM 2MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

封装: 32-TFSOP (0.724", 18.40mm Width)

库存6,336

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

55ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

W947D6HBHX6E TR

Winbond Electronics

IC SDRAM 128MBIT 166MHZ 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-VFBGA (8x9)

封装: 60-TFBGA

库存2,400

DRAM

SDRAM - Mobile LPDDR

128Mb (8M x 16)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-VFBGA (8x9)

CY62137EV30LL-45ZSXI

Cypress Semiconductor Corp

IC SRAM 2MBIT 45NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存8,136

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

M24128-DRMN3TP/K

STMicroelectronics

IC EEPROM 128KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 450ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,216

EEPROM

128Kb (16K x 8)

I2C

1MHz

4ms

450ns

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BR93G86NUX-3BTTR

Rohm Semiconductor

IC EEPROM 16KBIT 3MHZ 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

封装: 8-UFDFN Exposed Pad

库存28,194

EEPROM

16Kb (1K x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

FM25V02A-G

Cypress Semiconductor Corp

IC FRAM 256KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,942

FRAM

FRAM (Ferroelectric RAM)

256Kb (32K x 8)

SPI

40MHz

-

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S29GL256S10TFB013

Cypress Semiconductor Corp

IC 256 MB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,112

-

S27KL0641DABHV030

Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,456

-

S29GL064N90BFI043

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封装: 48-VFBGA

库存3,232

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

MT29F1T08EEHAFJ4-3T:A

Micron Technology Inc.

IC FLASH 1T PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,472

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

40060455

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

70V24S17PFG8

Renesas Electronics Corporation

70V24S17PFG8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

W25Q512JVEIN

Winbond Electronics

SPIFLASH, 512M-BIT, 4KB UNIFORM

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI

133 MHz

3.5ms

6.5 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS25LP512M-RMLE-TY

DeLorme

IC FLASH 512MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

50µs, 1ms

-

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

10282417

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IS66WVS1M8BLL-104NLI-TR

ISSI, Integrated Silicon Solution Inc

8Mb, SerialRAM, 2.7V-3.6V, 104MH

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 8Mbit
Memory Interface: SPI, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

8Mbit

SPI, QPI

104 MHz

-

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

GS82582TT38GE-500I

GSI Technology Inc.

IC SRAM 288MBIT PAR 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 288Mbit
Memory Interface: Parallel
Clock Frequency: 500 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x17)

封装: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

288Mbit

Parallel

500 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x17)

MT40A2G8AG-062E-AIT-F-TR

Micron Technology Inc.

DDR4 16G 2GX8 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

DRAM

SDRAM - DDR4

16Gbit

Parallel

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

-