页 78 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S25FL064P0XNFI001M	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,752	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
S70GL02GP12FFI020	Cypress Semiconductor Corp	IC FLASH 2GBIT 120NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封装: 64-LBGA	库存5,440	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
IS43LD32320A-25BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: 134-TFBGA	库存2,752	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	0°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
MTFC32GJTED-3F WT	Micron Technology Inc.	IC FLASH 256GBIT 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-VFBGA Supplier Device Package: 169-VFBGA (14x18)	封装: 169-VFBGA	库存3,008	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	169-VFBGA	169-VFBGA (14x18)
R1EX25002ASA00I#S0	Renesas Electronics America	IC EEPROM 2KBIT 5MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,280	EEPROM	EEPROM	2Kb (256 x 8)	SPI	5MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CY7C1425UV18-267BZI	Cypress Semiconductor Corp	IC SRAM 36MBIT 267MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (4M x 9) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存4,784	SRAM	SRAM - Synchronous, QDR II	36Mb (4M x 9)	Parallel	267MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V256SA15PZI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封装: 28-TSSOP (0.465", 11.80mm Width)	库存3,424	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
MT48LC128M4A2TG-7E:C	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存5,168	DRAM	SDRAM	512Mb (128M x 4)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT28F400B3WG-8 BET TR	Micron Technology Inc.	IC FLASH 4MBIT 80NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 80ns Access Time: 80ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存3,856	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	80ns	80ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
M93C46-WMN6T	STMicroelectronics	IC EEPROM 1KBIT 2MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存1,705,728	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AT29LV010A-20JC	Microchip Technology	IC FLASH 1MBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 200ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存6,496	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	20ms	200ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
7164S20TDB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封装: 28-CDIP (0.300", 7.62mm)	库存2,560	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
MT46V16M16CY-5B:K TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	封装: 60-TFBGA	库存7,312	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
24LC21/SN	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,864	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	10ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY14B104K-ZS45XI	Cypress Semiconductor Corp	IC NVSRAM 4MBIT 45NS 44TSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存11,124	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
24LC128-E/ST	Microchip Technology	IC EEPROM 128KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存12,528	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1021D-10ZSXIT	Cypress Semiconductor Corp	IC SRAM 1MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存378,120	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
93LC76C-I/MS	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存14,658	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
MT53D512M64D8TZ-053 WT:B	Micron Technology Inc.	IC DRAM 32G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,848	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MX25V4035FM1I	Macronix	IC FLASH 4MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,184	-	-	-	-	-	-	-	-	-	-	-	-
AS25F304MD-10S1INR	Alliance Memory, Inc.	4MB, 3.3V,SERIAL MULTI NOR FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 75µs, 2ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Dual I/O	104 MHz	75µs, 2ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
24FC16H-I-SN	Microchip Technology	IC EEPROM 16KBIT I2C 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 450 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存3,264	EEPROM	EEPROM	16Kbit	I2C	1 MHz	5ms	450 ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
W25Q128JVFJQ-TR	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	3ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT62F1536M32D4DS-026-WT-ES-B	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
R1QDA7218ABG-19IB0	Renesas Electronics Corporation	STANDARD SRAM, 4MX18, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
M10082040054X0ISAY	Renesas Electronics Corporation	IC RAM 8MBIT SPI 54MHZ 8SOIC Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 54 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71V ~ 2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	8Mbit	SPI	54 MHz	-	-	1.71V ~ 2V	-40°C ~ 85°C	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
24FC08T-E-Q6B36KVAO	Microchip Technology	IC EEPROM 8KBIT I2C 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 450 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: -	Request a Quote	EEPROM	EEPROM	8Kbit	I2C	1 MHz	5ms	450 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount, Wettable Flank	8-UFDFN Exposed Pad	8-UDFN (2x3)
W66BQ6NBUAGJ	Winbond Electronics	IC DRAM 2GBIT LVSTL 11 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.866 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_11	1.866 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
IM4G16D3FDBG-093	Intelligent Memory Ltd.	IC DRAM 4GBIT PAR 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 2133 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	4Gbit	Parallel	2133 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
S80KS2563GABHA020	Infineon Technologies	IC PSRAM 256MBIT SPI/OCTL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 256Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	库存2,028	PSRAM	PSRAM (Pseudo SRAM)	256Mbit	SPI - Octal I/O	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)

S25FL064P0XNFI001M

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,752

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

S70GL02GP12FFI020

Cypress Semiconductor Corp

IC FLASH 2GBIT 120NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

库存5,440

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

IS43LD32320A-25BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: 134-TFBGA

库存2,752

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

0°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

MTFC32GJTED-3F WT

Micron Technology Inc.

IC FLASH 256GBIT 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-VFBGA
Supplier Device Package: 169-VFBGA (14x18)

封装: 169-VFBGA

库存3,008

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

169-VFBGA

169-VFBGA (14x18)

R1EX25002ASA00I#S0

Renesas Electronics America

IC EEPROM 2KBIT 5MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,280

EEPROM

2Kb (256 x 8)

SPI

5MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CY7C1425UV18-267BZI

Cypress Semiconductor Corp

IC SRAM 36MBIT 267MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存4,784

SRAM

SRAM - Synchronous, QDR II

36Mb (4M x 9)

Parallel

267MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V256SA15PZI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封装: 28-TSSOP (0.465", 11.80mm Width)

库存3,424

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

MT48LC128M4A2TG-7E:C

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存5,168

DRAM

SDRAM

512Mb (128M x 4)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT28F400B3WG-8 BET TR

Micron Technology Inc.

IC FLASH 4MBIT 80NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存3,856

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

80ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

M93C46-WMN6T

STMicroelectronics

IC EEPROM 1KBIT 2MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存1,705,728

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AT29LV010A-20JC

Microchip Technology

IC FLASH 1MBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 200ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存6,496

FLASH

1Mb (128K x 8)

Parallel

-

20ms

200ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

7164S20TDB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封装: 28-CDIP (0.300", 7.62mm)

库存2,560

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

MT46V16M16CY-5B:K TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

封装: 60-TFBGA

库存7,312

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

24LC21/SN

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,864

EEPROM

1Kb (128 x 8)

I2C

400kHz

10ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY14B104K-ZS45XI

Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 44TSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存11,124

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

24LC128-E/ST

Microchip Technology

IC EEPROM 128KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存12,528

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1021D-10ZSXIT

Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存378,120

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

93LC76C-I/MS

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存14,658

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

MT53D512M64D8TZ-053 WT:B

Micron Technology Inc.

IC DRAM 32G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,848

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MX25V4035FM1I

Macronix

IC FLASH 4MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,184

-

AS25F304MD-10S1INR

Alliance Memory, Inc.

4MB, 3.3V,SERIAL MULTI NOR FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 75µs, 2ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Dual I/O

104 MHz

75µs, 2ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

24FC16H-I-SN

Microchip Technology

IC EEPROM 16KBIT I2C 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存3,264

EEPROM

16Kbit

I2C

1 MHz

5ms

450 ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

W25Q128JVFJQ-TR

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

3ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT62F1536M32D4DS-026-WT-ES-B

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

R1QDA7218ABG-19IB0

Renesas Electronics Corporation

STANDARD SRAM, 4MX18, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

M10082040054X0ISAY

Renesas Electronics Corporation

IC RAM 8MBIT SPI 54MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 54 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71V ~ 2V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

8Mbit

SPI

54 MHz

-

1.71V ~ 2V

-40°C ~ 85°C

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

24FC08T-E-Q6B36KVAO

Microchip Technology

IC EEPROM 8KBIT I2C 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: -

Request a Quote

EEPROM

8Kbit

I2C

1 MHz

5ms

450 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount, Wettable Flank

8-UFDFN Exposed Pad

8-UDFN (2x3)

W66BQ6NBUAGJ

Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.866 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_11

1.866 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

IM4G16D3FDBG-093

Intelligent Memory Ltd.

IC DRAM 4GBIT PAR 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 2133 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

4Gbit

Parallel

2133 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

S80KS2563GABHA020

Infineon Technologies

IC PSRAM 256MBIT SPI/OCTL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

库存2,028

PSRAM

PSRAM (Pseudo SRAM)

256Mbit

SPI - Octal I/O

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)