页 716 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DS28E07+W	Maxim Integrated	IC EEPROM 1KBIT 1WIRE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (256 x 4) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 3 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,200	EEPROM	EEPROM	1Kb (256 x 4)	1-Wire?	-	-	2µs	3 V ~ 5.25 V	-40°C ~ 85°C (TA)	-	-	-
S99-50289	Cypress Semiconductor Corp	IC MEMORY 512MB PAGE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存10,248	-	-	-	-	-	-	-	-	-	-	-	-
24FC1026T-I/ST	Microchip Technology	IC EEPROM 1MBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,664	EEPROM	EEPROM	1Mb (128K x 8)	I2C	1MHz	5ms	400ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IDT71V25761SA183BQI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 183MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 183MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存5,472	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	183MHz	-	5.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
NAND512W3A2CZA6E	Micron Technology Inc.	IC FLASH 512MBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50ns Access Time: 50ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-TFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-TFBGA	库存16,032	FLASH	FLASH - NAND	512Mb (64M x 8)	Parallel	-	50ns	50ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-TFBGA	63-VFBGA (9x11)
CY14B101L-SP45XIT	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 45NS 48SSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Supplier Device Package: 48-SSOP	封装: 48-BSSOP (0.295", 7.50mm Width)	库存5,664	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-BSSOP (0.295", 7.50mm Width)	48-SSOP
IS62WV5128BLL-55HI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 55NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP I	封装: 32-LFSOP (0.465", 11.80mm Width)	库存2,128	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LFSOP (0.465", 11.80mm Width)	32-sTSOP I
7025L20FB	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 20NS 84FLATPAK Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 84-FlatPack Supplier Device Package: 84-FLATPAK	封装: 84-FlatPack	库存7,248	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	84-FlatPack	84-FLATPAK
70V631S10BCG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 10NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封装: 256-LBGA	库存7,504	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (256K x 18)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
71256L55TDB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 55NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封装: 28-CDIP (0.300", 7.62mm)	库存7,872	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
7006S55PF8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (16K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	封装: 64-LQFP	库存5,936	SRAM	SRAM - Dual Port, Asynchronous	128Kb (16K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
CY14B101LA-ZS20XIT	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 20NS 44TSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存2,512	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	20ns	20ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT45DQ321-MHF-T	Adesto Technologies	IC FLASH 32MBIT 85MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (528 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	封装: 8-UDFN Exposed Pad	库存6,864	FLASH	FLASH	32Mb (528 Bytes x 8192 pages)	SPI	104MHz	8µs, 4ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
RM24C32C-LMAI-T	Adesto Technologies	IC EEPROM 32KBIT 1MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32kb (32B Page Size) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 100µs, 1.2ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存2,496	EEPROM	EEPROM	32kb (32B Page Size)	I2C	1MHz	100µs, 1.2ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
AT24C256C-MAHL-T	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存436,632	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
S34MS04G204TFB013	Cypress Semiconductor Corp	NAND Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,904	-	-	-	-	-	-	-	-	-	-	-	-
W25Q256FVEJQ TR	Winbond Electronics	IC FLASH MEMORY 256MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,840	-	-	-	-	-	-	-	-	-	-	-	-
S99PL064J0110 P	Cypress Semiconductor Corp	IC FLASH MEM NOR 48FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,984	-	-	-	-	-	-	-	-	-	-	-	-
MT44K64M18RCT-125E:A TR	Micron Technology Inc.	IC RLDRAM 1.125GBIT TBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,424	-	-	-	-	-	-	-	-	-	-	-	-
MSP17LV164-E1-TH-001	Cypress Semiconductor Corp	IC MEMORY FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,448	-	-	-	-	-	-	-	-	-	-	-	-
MT40A4G4VA-062E:B	Micron Technology Inc.	IC DDR4 SDRAM 16GB 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (1G x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (10x11)	封装: 78-TFBGA	库存3,984	DRAM	SDRAM - DDR4	16Gb (1G x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (10x11)
AT24C16C-SSPD-T	Microchip Technology	1MHZ AUTO TMP 8-SOIC-N Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,968	EEPROM	EEPROM	16Kb (2K x 8)	I²C	1MHz	5ms	550ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C128M16D3LC-12BINTR	Alliance Memory, Inc.	IC DRAM 2GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-FBGA (7.5x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-FBGA (7.5x13)
AS6C8016B-55BIN	Alliance Memory, Inc.	IC SRAM 8MB PARALLEL 48FPBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	48-LFBGA	48-TFBGA (6x8)
AT25SF041B-DWF	Renesas Electronics Corporation	IC FLASH 4MBIT SPI/QUAD WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 5µs, 2.5ms Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	封装: -	Request a Quote	FLASH	FLASH - NOR	4Mbit	SPI - Quad I/O	85 MHz	5µs, 2.5ms	-	2.5V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	Die	Wafer
K6X0808C1D-BF70	Samsung	SRAM ASYNC SLOW 256K 32Kx8 28-S Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 28-SOP	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	70ns	-	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	-	28-SOP
TMS6787-15N	Texas Instruments	STANDARD SRAM, 64KX1, 15NS, Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
40060325-001	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
EM032LXOAB320IS1R	Everspin Technologies Inc.	IC RAM 32MBIT XSPI/OCTAL 24TBGA Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 32Mbit Memory Interface: xSPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TBGA (6x8)	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	32Mbit	xSPI - Octal I/O	200 MHz	-	-	1.65V ~ 2V	-40°C ~ 85°C	Surface Mount	24-TBGA	24-TBGA (6x8)
GD25LQ16ENIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 16MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (3x4)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2.1V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (3x4)

DS28E07+W

Maxim Integrated

IC EEPROM 1KBIT 1WIRE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (256 x 4)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 3 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,200

EEPROM

1Kb (256 x 4)

1-Wire?

-

2µs

3 V ~ 5.25 V

-40°C ~ 85°C (TA)

-

S99-50289

Cypress Semiconductor Corp

IC MEMORY 512MB PAGE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存10,248

-

24FC1026T-I/ST

Microchip Technology

IC EEPROM 1MBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,664

EEPROM

1Mb (128K x 8)

I2C

1MHz

5ms

400ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IDT71V25761SA183BQI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 183MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存5,472

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

183MHz

-

5.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

NAND512W3A2CZA6E

Micron Technology Inc.

IC FLASH 512MBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-TFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-TFBGA

库存16,032

FLASH

FLASH - NAND

512Mb (64M x 8)

Parallel

-

50ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-TFBGA

63-VFBGA (9x11)

CY14B101L-SP45XIT

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 48SSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: 48-SSOP

封装: 48-BSSOP (0.295", 7.50mm Width)

库存5,664

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-BSSOP (0.295", 7.50mm Width)

48-SSOP

IS62WV5128BLL-55HI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I

封装: 32-LFSOP (0.465", 11.80mm Width)

库存2,128

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LFSOP (0.465", 11.80mm Width)

32-sTSOP I

7025L20FB

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 84FLATPAK

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-FlatPack
Supplier Device Package: 84-FLATPAK

封装: 84-FlatPack

库存7,248

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

84-FlatPack

84-FLATPAK

70V631S10BCG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 10NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封装: 256-LBGA

库存7,504

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (256K x 18)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

71256L55TDB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封装: 28-CDIP (0.300", 7.62mm)

库存7,872

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

7006S55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

库存5,936

SRAM

SRAM - Dual Port, Asynchronous

128Kb (16K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

CY14B101LA-ZS20XIT

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 20NS 44TSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存2,512

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

20ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT45DQ321-MHF-T

Adesto Technologies

IC FLASH 32MBIT 85MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (528 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

封装: 8-UDFN Exposed Pad

库存6,864

FLASH

32Mb (528 Bytes x 8192 pages)

SPI

104MHz

8µs, 4ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

RM24C32C-LMAI-T

Adesto Technologies

IC EEPROM 32KBIT 1MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32kb (32B Page Size)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 100µs, 1.2ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存2,496

EEPROM

32kb (32B Page Size)

I2C

1MHz

100µs, 1.2ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

AT24C256C-MAHL-T

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存436,632

EEPROM

256Kb (32K x 8)

I2C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

S34MS04G204TFB013

Cypress Semiconductor Corp

NAND

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,904

-

W25Q256FVEJQ TR

Winbond Electronics

IC FLASH MEMORY 256MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,840

-

S99PL064J0110 P

Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,984

-

MT44K64M18RCT-125E:A TR

Micron Technology Inc.

IC RLDRAM 1.125GBIT TBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,424

-

MSP17LV164-E1-TH-001

Cypress Semiconductor Corp

IC MEMORY FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,448

-

MT40A4G4VA-062E:B

Micron Technology Inc.

IC DDR4 SDRAM 16GB 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (1G x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (10x11)

封装: 78-TFBGA

库存3,984

DRAM

SDRAM - DDR4

16Gb (1G x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (10x11)

AT24C16C-SSPD-T

Microchip Technology

1MHZ AUTO TMP 8-SOIC-N

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,968

EEPROM

16Kb (2K x 8)

I²C

1MHz

5ms

550ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C128M16D3LC-12BINTR

Alliance Memory, Inc.

IC DRAM 2GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-FBGA (7.5x13)

封装: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-FBGA (7.5x13)

AS6C8016B-55BIN

Alliance Memory, Inc.

IC SRAM 8MB PARALLEL 48FPBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: -

Request a Quote

-

Surface Mount

48-LFBGA

48-TFBGA (6x8)

AT25SF041B-DWF

Renesas Electronics Corporation

IC FLASH 4MBIT SPI/QUAD WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 5µs, 2.5ms
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

封装: -

Request a Quote

FLASH

FLASH - NOR

4Mbit

SPI - Quad I/O

85 MHz

5µs, 2.5ms

-

2.5V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

Die

Wafer

K6X0808C1D-BF70

Samsung

SRAM ASYNC SLOW 256K 32Kx8 28-S

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 28-SOP

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

70ns

-

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

-

28-SOP

TMS6787-15N

Texas Instruments

STANDARD SRAM, 64KX1, 15NS,

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

40060325-001

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

EM032LXOAB320IS1R

Everspin Technologies Inc.

IC RAM 32MBIT XSPI/OCTAL 24TBGA

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 32Mbit
Memory Interface: xSPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TBGA (6x8)

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

32Mbit

xSPI - Octal I/O

200 MHz

-

1.65V ~ 2V

-40°C ~ 85°C

Surface Mount

24-TBGA

24-TBGA (6x8)

GD25LQ16ENIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (3x4)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2.1V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (3x4)