页 575 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS45S16800E-6TLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存7,280	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MTFC32GJUEF-AIT TR	Micron Technology Inc.	IC FLASH 256GBIT 169TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-TFBGA Supplier Device Package: 169-TFBGA (14x18)	封装: 169-TFBGA	库存7,152	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	169-TFBGA	169-TFBGA (14x18)
IDT71V416VS15PHI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 15NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存3,328	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
7025S55GB	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	封装: 84-BPGA	库存2,576	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
70V659S15DR	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 15NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	封装: 208-BFQFP	库存2,176	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (128K x 36)	Parallel	-	15ns	15ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V24S35J8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 35NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封装: 84-LCC (J-Lead)	库存6,080	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
71V67703S75BQ	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 7.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存3,264	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
71V632S7PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 7NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mb (64K x 32) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: 7ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存3,632	SRAM	SRAM - Synchronous	2Mb (64K x 32)	Parallel	66MHz	-	7ns	3.135 V ~ 3.63 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V25761S166PFG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存2,672	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
S29GL128S90GHI020	Cypress Semiconductor Corp	IC FLASH 128MBIT 90NS 56BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFBGA Supplier Device Package: 56-Fortified BGA (9x7)	封装: 56-VFBGA	库存7,296	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	-	60ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-VFBGA	56-Fortified BGA (9x7)
S29GL032N11FFIV23	Cypress Semiconductor Corp	IC FLASH 32MBIT 110NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (13x11)	封装: 64-LBGA	库存4,096	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (13x11)
BR95160-RMN6TP	Rohm Semiconductor	IC EEPROM 16KBIT 2MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,776	EEPROM	EEPROM	16Kb (2K x 8)	SPI	2MHz	10ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AT25SF041-SSHD-B	Adesto Technologies	IC FLASH 4MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 2.5ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存57,696	FLASH	FLASH	4Mb (512K x 8)	SPI	104MHz	5µs, 2.5ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
JS28F128P30BF75A	Micron Technology Inc.	IC FLASH 128MBIT 75NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 75ns Access Time: 75ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封装: 56-TFSOP (0.724", 18.40mm Width)	库存6,928	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	40MHz	75ns	75ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
AS4C64M8D1-5TIN	Alliance Memory, Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	封装: 66-TSSOP (0.400", 10.16mm Width)	库存6,432	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
DS1245AB-120+	Maxim Integrated	IC NVSRAM 1MBIT 120NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	封装: 32-DIP Module (0.600", 15.24mm)	库存20,412	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	120ns	120ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
NM93CS06LN	ON Semiconductor	IC EEPROM 256 SPI 250KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256b (16 x 16) Memory Interface: SPI Clock Frequency: 250kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存5,472	EEPROM	EEPROM	256b (16 x 16)	SPI	250kHz	15ms	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
MT53D4DDSB-DC	Micron Technology Inc.	LPDDR4 0 384MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,392	-	-	-	-	-	-	-	-	-	-	-	-
SST26VF016BT-80E/MF70SVAO	Microchip Technology	16MBIT SPI/SQI FLASH 125C AUTO 2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16M (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	封装: 8-WDFN Exposed Pad	库存4,896	FLASH	FLASH	16M (2M x 8)	SPI - Quad I/O	80MHz	1.5ms	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
W979H2KBVX1E	Winbond Electronics	IC DRAM 512MBIT HSUL 12 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4B Memory Size: 512Mbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4B	512Mbit	HSUL_12	533 MHz	15ns	-	1.14V ~ 1.3V, 1.7V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
EMD3D256M08G1-150CBS1R	Everspin Technologies Inc.	LINEAR IC'S Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: 667 MHz Write Cycle Time - Word, Page: - Access Time: 14 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-BGA (10x13)	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	256Mbit	Parallel	667 MHz	-	14 ns	1.425V ~ 1.575V	0°C ~ 85°C (TC)	Surface Mount	78-TFBGA	78-BGA (10x13)
IS49RL36320-107EBL	ISSI, Integrated Silicon Solution Inc	RLDRAM3 Memory, 1.15Gbit, x36, C Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 3 Memory Size: 1.152Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 1.28V ~ 1.42V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-LBGA Supplier Device Package: 168-FBGA (13.5x13.5)	封装: -	Request a Quote	DRAM	RLDRAM 3	1.152Gbit	Parallel	933 MHz	-	8 ns	1.28V ~ 1.42V	0°C ~ 95°C (TC)	Surface Mount	168-LBGA	168-FBGA (13.5x13.5)
IS43LD32640C-25BLI-TR	ISSI, Integrated Silicon Solution Inc	2G, 1.2/1.8V, LPDDR2, 64Mx32, 40 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	2Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
GD55LB01GEY2GY	GigaDevice Semiconductor (HK) Limited	IC FLASH 1GBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 140µs, 2ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	166 MHz	140µs, 2ms	6 ns	1.65V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD25S512MDBIGY	GigaDevice Semiconductor (HK) Limited	IC FLSH 512MBIT SPI/QUAD 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O	104 MHz	50µs, 2.4ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
W25Q10RLSNJQ	Winbond Electronics	SPIFLASH, 1M-BIT, 4KB UNIFORM SE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT54W512H36BF-7-5	Micron Technology Inc.	IC SRAM 18MBIT HSTL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mbit Memory Interface: HSTL Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 500 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	18Mbit	HSTL	133 MHz	-	500 ps	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
HM1-6514-9X136	Harris Corporation	1024 X 4 CMOS STATIC RAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
THGBMHG8C4LBAU7	Kioxia America, Inc.	IC FLASH 32GBIT EMMC 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND	32Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
MT62F4G32D8DV-023-WT-C-TR	Micron Technology Inc.	LPDDR5 128GBIT 32 315/315 LFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS45S16800E-6TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存7,280

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MTFC32GJUEF-AIT TR

Micron Technology Inc.

IC FLASH 256GBIT 169TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-TFBGA
Supplier Device Package: 169-TFBGA (14x18)

封装: 169-TFBGA

库存7,152

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

169-TFBGA

169-TFBGA (14x18)

IDT71V416VS15PHI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存3,328

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

7025S55GB

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

封装: 84-BPGA

库存2,576

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

70V659S15DR

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 15NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

库存2,176

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (128K x 36)

Parallel

-

15ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V24S35J8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封装: 84-LCC (J-Lead)

库存6,080

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

71V67703S75BQ

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存3,264

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

71V632S7PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 7NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mb (64K x 32)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: 7ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存3,632

SRAM

SRAM - Synchronous

2Mb (64K x 32)

Parallel

66MHz

-

7ns

3.135 V ~ 3.63 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V25761S166PFG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存2,672

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

S29GL128S90GHI020

Cypress Semiconductor Corp

IC FLASH 128MBIT 90NS 56BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-Fortified BGA (9x7)

封装: 56-VFBGA

库存7,296

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

-

60ns

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-VFBGA

56-Fortified BGA (9x7)

S29GL032N11FFIV23

Cypress Semiconductor Corp

IC FLASH 32MBIT 110NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)

封装: 64-LBGA

库存4,096

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (13x11)

BR95160-RMN6TP

Rohm Semiconductor

IC EEPROM 16KBIT 2MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,776

EEPROM

16Kb (2K x 8)

SPI

2MHz

10ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AT25SF041-SSHD-B

Adesto Technologies

IC FLASH 4MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 2.5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存57,696

FLASH

4Mb (512K x 8)

SPI

104MHz

5µs, 2.5ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

JS28F128P30BF75A

Micron Technology Inc.

IC FLASH 128MBIT 75NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

库存6,928

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

40MHz

75ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

AS4C64M8D1-5TIN

Alliance Memory, Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

封装: 66-TSSOP (0.400", 10.16mm Width)

库存6,432

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

DS1245AB-120+

Maxim Integrated

IC NVSRAM 1MBIT 120NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

库存20,412

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

120ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

NM93CS06LN

ON Semiconductor

IC EEPROM 256 SPI 250KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256b (16 x 16)
Memory Interface: SPI
Clock Frequency: 250kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存5,472

EEPROM

256b (16 x 16)

SPI

250kHz

15ms

-

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

MT53D4DDSB-DC

Micron Technology Inc.

LPDDR4 0 384MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,392

-

SST26VF016BT-80E/MF70SVAO

Microchip Technology

16MBIT SPI/SQI FLASH 125C AUTO 2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16M (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

封装: 8-WDFN Exposed Pad

库存4,896

FLASH

16M (2M x 8)

SPI - Quad I/O

80MHz

1.5ms

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

W979H2KBVX1E

Winbond Electronics

IC DRAM 512MBIT HSUL 12 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4B
Memory Size: 512Mbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4B

512Mbit

HSUL_12

533 MHz

15ns

-

1.14V ~ 1.3V, 1.7V ~ 1.95V

-25°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

EMD3D256M08G1-150CBS1R

Everspin Technologies Inc.

LINEAR IC'S

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: -
Access Time: 14 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-BGA (10x13)

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

256Mbit

Parallel

667 MHz

-

14 ns

1.425V ~ 1.575V

0°C ~ 85°C (TC)

Surface Mount

78-TFBGA

78-BGA (10x13)

IS49RL36320-107EBL

ISSI, Integrated Silicon Solution Inc

RLDRAM3 Memory, 1.15Gbit, x36, C

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 3
Memory Size: 1.152Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 1.28V ~ 1.42V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-LBGA
Supplier Device Package: 168-FBGA (13.5x13.5)

封装: -

Request a Quote

DRAM

RLDRAM 3

1.152Gbit

Parallel

933 MHz

-

8 ns

1.28V ~ 1.42V

0°C ~ 95°C (TC)

Surface Mount

168-LBGA

168-FBGA (13.5x13.5)

IS43LD32640C-25BLI-TR

ISSI, Integrated Silicon Solution Inc

2G, 1.2/1.8V, LPDDR2, 64Mx32, 40

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

2Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

GD55LB01GEY2GY

GigaDevice Semiconductor (HK) Limited

IC FLASH 1GBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 140µs, 2ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

166 MHz

140µs, 2ms

6 ns

1.65V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

GD25S512MDBIGY

GigaDevice Semiconductor (HK) Limited

IC FLSH 512MBIT SPI/QUAD 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O

104 MHz

50µs, 2.4ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

W25Q10RLSNJQ

Winbond Electronics

SPIFLASH, 1M-BIT, 4KB UNIFORM SE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT54W512H36BF-7-5

Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mbit
Memory Interface: HSTL
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 500 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

Request a Quote

SRAM

SRAM - Synchronous

18Mbit

HSTL

133 MHz

-

500 ps

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

HM1-6514-9X136

Harris Corporation

1024 X 4 CMOS STATIC RAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

THGBMHG8C4LBAU7

Kioxia America, Inc.

IC FLASH 32GBIT EMMC 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND

32Gbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

MT62F4G32D8DV-023-WT-C-TR

Micron Technology Inc.

LPDDR5 128GBIT 32 315/315 LFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-