图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Cypress Semiconductor Corp |
IC FLASH NOR
|
封装: - |
库存3,920 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Micron Technology Inc. |
IC FLASH 128MBIT 85NS 56VFBGA
|
封装: 56-VFBGA |
库存5,328 |
|
FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | 66MHz | 85ns | 85ns | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 56-VFBGA | 56-VFBGA (7.7x9) |
||
ISSI, Integrated Silicon Solution Inc |
IC FLASH 4MBIT 100MHZ 8WSON
|
封装: 8-WDFN Exposed Pad |
库存6,480 |
|
FLASH | FLASH | 4Mb (512K x 8) | SPI | 100MHz | 5ms | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
||
Microchip Technology |
IC EEPROM 8KBIT 3MHZ 8DIP
|
封装: 8-DIP (0.300", 7.62mm) |
库存3,776 |
|
EEPROM | EEPROM | 8Kb (512 x 16) | SPI | 3MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Micron Technology Inc. |
IC FLASH 1GBIT 100NS 64EASYBGA
|
封装: 64-TBGA |
库存2,176 |
|
FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | 52MHz | 100ns | 100ns | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-EasyBGA (8x10) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 100MHZ 100TQFP
|
封装: 100-LQFP |
库存14,532 |
|
SRAM | SRAM - Synchronous ZBT | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 8NS 165CABGA
|
封装: 165-TBGA |
库存2,288 |
|
SRAM | SRAM - Synchronous ZBT | 4.5Mb (128K x 36) | Parallel | - | - | 8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
||
Microchip Technology |
IC FLASH 4MBIT 90NS 32DIP
|
封装: 32-DIP (0.600", 15.24mm) |
库存5,104 |
|
FLASH | FLASH | 4Mb (512K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-DIP |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT 1066MHZ 168BGA
|
封装: 168-LBGA |
库存3,344 |
|
DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1.066GHz | - | 8ns | 1.28 V ~ 1.42 V | 0°C ~ 70°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 20NS 100TQFP
|
封装: 100-LQFP |
库存6,288 |
|
SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 20NS 24CDIP
|
封装: 24-CDIP (0.300", 7.62mm) |
库存7,104 |
|
SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
||
Microchip Technology |
IC FLASH 32MBIT 104MHZ 24TFBGA
|
封装: 24-TBGA |
库存4,384 |
|
FLASH | FLASH | 32Mb (4M x 8) | SPI - Quad I/O | 104MHz | 1.5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 12NS 44SOJ
|
封装: 44-BSOJ (0.400", 10.16mm Width) |
库存6,272 |
|
SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
||
Microchip Technology |
IC EEPROM 1KBIT 2MHZ SOT23-6
|
封装: SOT-23-6 |
库存23,244 |
|
EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Microchip Technology |
IC EEPROM 128K I2C 400KHZ WAFER
|
封装: Die |
库存6,128 |
|
EEPROM | EEPROM | 128Kb (16K x 8) | I²C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 166MHZ
|
封装: 54-TSOP (0.400", 10.16mm Width) |
库存5,504 |
|
DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
||
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.33GHZ
|
封装: - |
库存2,016 |
|
DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.33GHz | - | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA
|
封装: - |
库存7,152 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
400KHZ AUTO GRADE 8-SOIC-N
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,304 |
|
EEPROM | EEPROM | 256Kb (32K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT PAR 168FBGA
|
封装: - |
Request a Quote |
|
DRAM | RLDRAM 3 | 576Mbit | Parallel | 800 MHz | - | 8 ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
||
Cypress Semiconductor Corp |
IC SRAM 16MBIT PARALLEL 72SIMM
|
封装: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 16Mbit | Parallel | - | 15ns | 15 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Socket | 72-SIMM | 72-SIMM |
||
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT PARALLEL 100TQFP
|
封装: - |
Request a Quote |
|
SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mbit | Parallel | 133 MHz | - | 4.2 ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
Cypress Semiconductor Corp |
DDR SRAM, 4MX18, 0.45NS PBGA165
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
IC EEPROM 256KB I2C CMOS 4WLCSP
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (1x1) |
||
ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 8G
|
封装: - |
Request a Quote |
|
DRAM | SDRAM - DDR3 | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
||
Rochester Electronics, LLC |
MD28F020-12/R
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
National Semiconductor |
ELECTRICALLY ERASABLE PAL DEVIC
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
IC SRAM 8MBIT PARALLEL 48VFBGA
|
封装: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
||
Rohm Semiconductor |
IC EEPROM 16KBIT MICROWIRE 8SOPJ
|
封装: - |
库存15,000 |
|
EEPROM | EEPROM | 16Kbit | Microwire | 2 MHz | 5ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
||
Microchip Technology |
IC EERAM 256KBIT SPI 66MHZ 8SOIC
|
封装: - |
Request a Quote |
|
EERAM | EEPROM, SRAM | 256Kbit | SPI | 66 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |