页 453 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S70GL02GP12FFI012	Cypress Semiconductor Corp	IC FLASH 2GBIT 120NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封装: 64-LBGA	库存3,728	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
EDFA164A2PB-JD-F-R TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,576	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
MT29F16G08ABACAWP:C	Micron Technology Inc.	IC FLASH 16GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存42,384	FLASH	FLASH - NAND	16Gb (2G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IDT71V65802S150PF	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存2,848	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
M29W200BB90N6	STMicroelectronics	IC FLASH 2MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8, 128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存5,104	FLASH	FLASH - NOR	2Mb (256K x 8, 128K x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT25080AN-10SI-1.8-T	Microchip Technology	IC EEPROM 8KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,776	EEPROM	EEPROM	8Kb (1K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT29C010A-90PC	Microchip Technology	IC FLASH 1MBIT 90NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	封装: 32-DIP (0.600", 15.24mm)	库存84,000	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
7130SA35L48B	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 48LCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-LCC Supplier Device Package: 48-LCC (14.22x14.22)	封装: 48-LCC	库存5,280	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	48-LCC	48-LCC (14.22x14.22)
EDFM432A1PH-GD-F-R TR	Micron Technology Inc.	LPDDR3 384MX32 PLASTIC VFBGA 1.2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,960	-	-	-	-	-	-	-	-	-	-	-	-
IS61NLP25618A-200TQI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存4,656	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT47H32M16U67A3WC1	Micron Technology Inc.	IC SDRAM 512MBIT WAFER Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,112	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	-	-	-	1.7 V ~ 1.9 V	-	-	-	-
IS43R32400E-5BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 200MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-LFBGA Supplier Device Package: 144-LFBGA (12x12)	封装: 144-LFBGA	库存3,696	DRAM	SDRAM - DDR	128Mb (4M x 32)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	144-LFBGA	144-LFBGA (12x12)
IS42VM16200D-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 32MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: 54-TFBGA	库存4,192	DRAM	SDRAM - Mobile	32Mb (2M x 16)	Parallel	133MHz	-	6ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
SST39VF3201C-70-4I-B3KE-T	Microchip Technology	IC FLASH 32MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: 48-TFBGA	库存4,048	FLASH	FLASH	32Mb (2M x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
W25Q80DLUXIE	Winbond Electronics	SPIFLASH, 8M-BIT, 4KB UNIFORM SE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封装: 8-UFDFN Exposed Pad	库存4,544	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	104MHz	3ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
93C66C-E/ST	Microchip Technology	IC EEPROM 4KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,000	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FL512SAGMFIR10	Cypress Semiconductor Corp	IC FLASH 512MBIT 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.295", 7.50mm Width)	库存4,640	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
CY62147G-45ZSXI	Cypress Semiconductor Corp	IC SRAM 4MB 45NS 44TSOPII Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,032	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
S27KL0641DABHI020	Cypress Semiconductor Corp	IC DRAM 64MBIT 3V 100MHZ 24BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 64Mb (8M x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 40ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: 24-VBGA	库存7,188	DRAM	DRAM	64Mb (8M x 8)	Parallel	100MHz	-	40ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
MX25R512FM1IL0	Macronix	IC FLASH 512KBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 33MHz Write Cycle Time - Word, Page: 100µs, 10ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存36,516	FLASH	FLASH - NOR	512Kb (64K x 8)	SPI	33MHz	100µs, 10ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
24AA01H-I/WF16K	Microchip Technology	IC EEPROM 1K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存3,696	EEPROM	EEPROM	1Kb (128 x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
24CW1280T-I/CS0668	Microchip Technology	128 KBIT I2C SERIAL EEPROM WITH Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-CSP	封装: 4-XFBGA, CSPBGA	库存39,600	EEPROM	EEPROM	128Kb (16K x 8)	I²C	1MHz	5ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	4-XFBGA, CSPBGA	4-CSP
S29AL008J70BFM020	Cypress Semiconductor Corp	IC FLASH 8M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封装: 48-VFBGA	库存6,064	FLASH	FLASH - NOR	8Mb (1M x 8, 512K x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
MTFC128GAPALNS-AIT ES	Micron Technology Inc.	IC FLASH 1T MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,552	FLASH	FLASH - NAND	1Tb (128G x 8)	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
MT47H512M4THN-25E:M	Micron Technology Inc.	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,400	DRAM	SDRAM - DDR2	2Gb (512M x 4)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	-	-	-
CY7C106B-25VCT	Cypress Semiconductor Corp	IC SRAM 1MBIT PARALLEL 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	25ns	25 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
W25Q256JWFIM	Winbond Electronics	IC FLASH 256MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 5ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	5ms	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
W25Q256JVEIN	Winbond Electronics	SPIFLASH, 3V, 256M-BIT, 4KB UNIF Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
SM662PAE-BDSS	Silicon Motion, Inc.	IC FLASH 640GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 640Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	640Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
CY7C1325F-100AIT	Cypress Semiconductor Corp	IC SRAM 4.5MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4.5Mbit	Parallel	100 MHz	-	8 ns	3.15V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)

S70GL02GP12FFI012

Cypress Semiconductor Corp

IC FLASH 2GBIT 120NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

库存3,728

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

EDFA164A2PB-JD-F-R TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,576

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

MT29F16G08ABACAWP:C

Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存42,384

FLASH

FLASH - NAND

16Gb (2G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IDT71V65802S150PF

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存2,848

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

M29W200BB90N6

STMicroelectronics

IC FLASH 2MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8, 128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存5,104

FLASH

FLASH - NOR

2Mb (256K x 8, 128K x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT25080AN-10SI-1.8-T

Microchip Technology

IC EEPROM 8KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,776

EEPROM

8Kb (1K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT29C010A-90PC

Microchip Technology

IC FLASH 1MBIT 90NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

封装: 32-DIP (0.600", 15.24mm)

库存84,000

FLASH

1Mb (128K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

7130SA35L48B

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 48LCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LCC
Supplier Device Package: 48-LCC (14.22x14.22)

封装: 48-LCC

库存5,280

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

48-LCC

48-LCC (14.22x14.22)

EDFM432A1PH-GD-F-R TR

Micron Technology Inc.

LPDDR3 384MX32 PLASTIC VFBGA 1.2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,960

-

IS61NLP25618A-200TQI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存4,656

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT47H32M16U67A3WC1

Micron Technology Inc.

IC SDRAM 512MBIT WAFER

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,112

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

-

1.7 V ~ 1.9 V

-

IS43R32400E-5BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 200MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Supplier Device Package: 144-LFBGA (12x12)

封装: 144-LFBGA

库存3,696

DRAM

SDRAM - DDR

128Mb (4M x 32)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

144-LFBGA

144-LFBGA (12x12)

IS42VM16200D-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 32MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

库存4,192

DRAM

SDRAM - Mobile

32Mb (2M x 16)

Parallel

133MHz

-

6ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

库存4,048

FLASH

32Mb (2M x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

W25Q80DLUXIE

Winbond Electronics

SPIFLASH, 8M-BIT, 4KB UNIFORM SE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封装: 8-UFDFN Exposed Pad

库存4,544

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

104MHz

3ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

93C66C-E/ST

Microchip Technology

IC EEPROM 4KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,000

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FL512SAGMFIR10

Cypress Semiconductor Corp

IC FLASH 512MBIT 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

库存4,640

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

CY62147G-45ZSXI

Cypress Semiconductor Corp

IC SRAM 4MB 45NS 44TSOPII

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,032

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

S27KL0641DABHI020

Cypress Semiconductor Corp

IC DRAM 64MBIT 3V 100MHZ 24BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 64Mb (8M x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 40ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: 24-VBGA

库存7,188

DRAM

64Mb (8M x 8)

Parallel

100MHz

-

40ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

MX25R512FM1IL0

Macronix

IC FLASH 512KBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 100µs, 10ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存36,516

FLASH

FLASH - NOR

512Kb (64K x 8)

SPI

33MHz

100µs, 10ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

24AA01H-I/WF16K

Microchip Technology

IC EEPROM 1K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存3,696

EEPROM

1Kb (128 x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

24CW1280T-I/CS0668

Microchip Technology

128 KBIT I2C SERIAL EEPROM WITH

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-CSP

封装: 4-XFBGA, CSPBGA

库存39,600

EEPROM

128Kb (16K x 8)

I²C

1MHz

5ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

4-XFBGA, CSPBGA

4-CSP

S29AL008J70BFM020

Cypress Semiconductor Corp

IC FLASH 8M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封装: 48-VFBGA

库存6,064

FLASH

FLASH - NOR

8Mb (1M x 8, 512K x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

MTFC128GAPALNS-AIT ES

Micron Technology Inc.

IC FLASH 1T MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,552

FLASH

FLASH - NAND

1Tb (128G x 8)

MMC

-

-40°C ~ 85°C (TA)

-

MT47H512M4THN-25E:M

Micron Technology Inc.

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,400

DRAM

SDRAM - DDR2

2Gb (512M x 4)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

-

CY7C106B-25VCT

Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

25ns

25 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

W25Q256JWFIM

Winbond Electronics

IC FLASH 256MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR

256Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

5ms

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

W25Q256JVEIN

Winbond Electronics

SPIFLASH, 3V, 256M-BIT, 4KB UNIF

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

SM662PAE-BDSS

Silicon Motion, Inc.

IC FLASH 640GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 640Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

640Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

CY7C1325F-100AIT

Cypress Semiconductor Corp

IC SRAM 4.5MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

4.5Mbit

Parallel

100 MHz

-

8 ns

3.15V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)