页 318 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
N25Q064A13EW9D0E	Micron Technology Inc.	IC FLASH 64MBIT 108MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8)	封装: 8-WDFN Exposed Pad	库存5,488	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
IS42SM32160C-75BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-WBGA (8x13)	封装: 90-LFBGA	库存5,696	DRAM	SDRAM - Mobile	512Mb (16M x 32)	Parallel	133MHz	-	5.4ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-LFBGA	90-WBGA (8x13)
MT41K256M4JP-15E:G	Micron Technology Inc.	IC SDRAM 1GBIT 667MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x11.5)	封装: 78-TFBGA	库存7,476	DRAM	SDRAM - DDR3	1Gb (256M x 4)	Parallel	667MHz	-	13.5ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x11.5)
IDT71V2556S100BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存4,528	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
CY7C1412AV18-250BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存6,300	SRAM	SRAM - Synchronous, QDR II	36Mb (2M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
CY7C1357C-133AXI	Cypress Semiconductor Corp	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存3,056	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT28C64X-25JI	Microchip Technology	IC EEPROM 64KBIT 250NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 250ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存6,672	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	1ms	250ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT28C040-25LC	Microchip Technology	IC EEPROM 4MBIT 250NS 44CLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 250ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-CLCC Supplier Device Package: 44-CLCC (16.54x16.54)	封装: 44-CLCC	库存4,352	EEPROM	EEPROM	4Mb (512K x 8)	Parallel	-	10ms	250ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	44-CLCC	44-CLCC (16.54x16.54)
AT28HC256-90FM/883	Microchip Technology	IC EEPROM 256KBIT 90NS 28FLATPK Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 28-CFlatPack Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed	封装: 28-CFlatPack	库存4,384	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Surface Mount	28-CFlatPack	28-Flatpack, Ceramic Bottom-Brazed
MT53B384M64D4TZ-053 WT ES:C TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.8GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,872	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
IS46TR16128AL-15HBLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: 96-TFBGA	库存4,128	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S86400F-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存2,688	DRAM	SDRAM	512Mb (64M x 8)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
EDB1332BDBH-1DAUT-F-D	Micron Technology Inc.	IC SDRAM 1GBIT 533MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	封装: 134-VFBGA	库存5,040	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 125°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
CY7C1347G-133AXCT	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存4,336	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT48LC2M32B2P-6A:J TR	Micron Technology Inc.	IC SDRAM 64MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封装: 86-TFSOP (0.400", 10.16mm Width)	库存7,936	DRAM	SDRAM	64Mb (2M x 32)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MX25L3206EZUI-12G	Macronix	IC FLASH 32MBIT 86MHZ 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 86MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x4)	封装: 8-UDFN Exposed Pad	库存7,608	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	86MHz	50µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x4)
IS62WV102416FBLL-45BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封装: 48-VFBGA	库存7,616	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
IS62WV51216EFBLL-45BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封装: 48-VFBGA	库存5,376	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	55ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
S25FS128SAGNFI103	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	封装: 8-WDFN Exposed Pad	库存7,920	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
24CW1280T-I/MUY	Microchip Technology	128 KBIT I2C SERIAL EEPROM WITH Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存2,608	EEPROM	EEPROM	128Kb (16K x 8)	I²C	1MHz	5ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
MT38W1011A90YZQXZI.XB8	Micron Technology Inc.	PARALLEL/PSRAM 48M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,048	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G08ABAEAWP-AITX:E	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存23,028	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT24C02C-XPD-T	Microchip Technology	400KHZ AUTO TEMP 8-TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存2,496	EEPROM	EEPROM	2Kb (256 x 8)	I²C	1MHz	5ms	450ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NV25020MUW3VTBG	onsemi	NV25020 - EEPROM SERIAL 2-KB SPI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1G64D4EK-023-WT-C-TR	Micron Technology Inc.	LPDDR5 64GBIT 64 441/441 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	2.133 GHz	-	-	1.05V	-25°C ~ 85°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
7142LA45L48B	Renesas Electronics Corporation	IC SRAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-LCC Supplier Device Package: 48-LCC (14.22x14.22)	封装: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	16Kbit	Parallel	-	45ns	45 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Surface Mount	48-LCC	48-LCC (14.22x14.22)
JM38510-23104BFA	National Semiconductor	STATIC RAM, 1K X 1, LOW-POWER, W Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1020B-12VC	Cypress Semiconductor Corp	IC SRAM 512KBIT PARALLEL 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 512Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	512Kbit	Parallel	-	12ns	12 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
MT53E1G32D2FW-046-AIT-B-TR	Micron Technology Inc.	LPDDR4 32G 1GX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	32Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS42S16160L-5BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256MBIT PAR 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	200 MHz	-	5 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)

N25Q064A13EW9D0E

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x5)(MLP8)

封装: 8-WDFN Exposed Pad

库存5,488

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WPDFN (6x5)(MLP8)

IS42SM32160C-75BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)

封装: 90-LFBGA

库存5,696

DRAM

SDRAM - Mobile

512Mb (16M x 32)

Parallel

133MHz

-

5.4ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-LFBGA

90-WBGA (8x13)

MT41K256M4JP-15E:G

Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x11.5)

封装: 78-TFBGA

库存7,476

DRAM

SDRAM - DDR3

1Gb (256M x 4)

Parallel

667MHz

-

13.5ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x11.5)

IDT71V2556S100BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存4,528

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

CY7C1412AV18-250BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存6,300

SRAM

SRAM - Synchronous, QDR II

36Mb (2M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

CY7C1357C-133AXI

Cypress Semiconductor Corp

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存3,056

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT28C64X-25JI

Microchip Technology

IC EEPROM 64KBIT 250NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 250ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存6,672

EEPROM

64Kb (8K x 8)

Parallel

-

1ms

250ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT28C040-25LC

Microchip Technology

IC EEPROM 4MBIT 250NS 44CLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 250ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-CLCC
Supplier Device Package: 44-CLCC (16.54x16.54)

封装: 44-CLCC

库存4,352

EEPROM

4Mb (512K x 8)

Parallel

-

10ms

250ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

44-CLCC

44-CLCC (16.54x16.54)

AT28HC256-90FM/883

Microchip Technology

IC EEPROM 256KBIT 90NS 28FLATPK

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-CFlatPack
Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed

封装: 28-CFlatPack

库存4,384

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Surface Mount

28-CFlatPack

28-Flatpack, Ceramic Bottom-Brazed

MT53B384M64D4TZ-053 WT ES:C TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,872

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

IS46TR16128AL-15HBLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

库存4,128

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S86400F-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存2,688

DRAM

SDRAM

512Mb (64M x 8)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

EDB1332BDBH-1DAUT-F-D

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

封装: 134-VFBGA

库存5,040

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 125°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

CY7C1347G-133AXCT

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存4,336

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT48LC2M32B2P-6A:J TR

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

库存7,936

DRAM

SDRAM

64Mb (2M x 32)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MX25L3206EZUI-12G

Macronix

IC FLASH 32MBIT 86MHZ 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 86MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x4)

封装: 8-UDFN Exposed Pad

库存7,608

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

86MHz

50µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x4)

IS62WV102416FBLL-45BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封装: 48-VFBGA

库存7,616

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

IS62WV51216EFBLL-45BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封装: 48-VFBGA

库存5,376

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

55ns

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

S25FS128SAGNFI103

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

封装: 8-WDFN Exposed Pad

库存7,920

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

24CW1280T-I/MUY

Microchip Technology

128 KBIT I2C SERIAL EEPROM WITH

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存2,608

EEPROM

128Kb (16K x 8)

I²C

1MHz

5ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

MT38W1011A90YZQXZI.XB8

Micron Technology Inc.

PARALLEL/PSRAM 48M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,048

-

MT29F2G08ABAEAWP-AITX:E

Micron Technology Inc.

IC FLASH 2G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存23,028

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT24C02C-XPD-T

Microchip Technology

400KHZ AUTO TEMP 8-TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存2,496

EEPROM

2Kb (256 x 8)

I²C

1MHz

5ms

450ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NV25020MUW3VTBG

onsemi

NV25020 - EEPROM SERIAL 2-KB SPI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT62F1G64D4EK-023-WT-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 64 441/441 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

2.133 GHz

-

1.05V

-25°C ~ 85°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

7142LA45L48B

Renesas Electronics Corporation

IC SRAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LCC
Supplier Device Package: 48-LCC (14.22x14.22)

封装: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

16Kbit

Parallel

-

45ns

45 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Surface Mount

48-LCC

48-LCC (14.22x14.22)

JM38510-23104BFA

National Semiconductor

STATIC RAM, 1K X 1, LOW-POWER, W

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CY7C1020B-12VC

Cypress Semiconductor Corp

IC SRAM 512KBIT PARALLEL 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 512Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

512Kbit

Parallel

-

12ns

12 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

MT53E1G32D2FW-046-AIT-B-TR

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

32Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS42S16160L-5BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

200 MHz

-

5 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)