页 313 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EMFP112A3PB-DV-F-R TR	Micron Technology Inc.	LPDDR3 SPECIAL/CUSTOM PLASTIC UF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,576	-	-	-	-	-	-	-	-	-	-	-	-
EDFA232A2MA-JD-F-D	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,824	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
N25Q032A13ESEC0F TR	Micron Technology Inc.	IC FLASH NOR 8MX4 SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (8M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,256	FLASH	FLASH - NOR	32Mb (8M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
M25PE40-VMC6G	Micron Technology Inc.	IC FLASH 4MBIT 75MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x3)	封装: 8-VDFN Exposed Pad	库存5,856	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x3)
IDT71V65602S150PFG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存3,200	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V25761SA183BQ	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 183MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 183MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存3,568	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	183MHz	-	5.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT6116LA35TP	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 24DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 24-DIP (0.300", 7.62mm) Supplier Device Package: 24-PDIP	封装: 24-DIP (0.300", 7.62mm)	库存6,288	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	24-DIP (0.300", 7.62mm)	24-PDIP
IS42S16800E-75EBL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: 54-TFBGA	库存7,280	DRAM	SDRAM	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
MT47H128M8HQ-3:G TR	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x11.5)	封装: 60-FBGA	库存7,184	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-FBGA	60-FBGA (8x11.5)
M95080-MN6P	STMicroelectronics	IC EEPROM 8KBIT 10MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,360	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CY7C1480V33-167AXCT	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存5,520	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71T75802S200BGI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 200MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.2ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存2,624	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	200MHz	-	3.2ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71342LA20JG	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 20NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封装: 52-LCC (J-Lead)	库存2,672	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
IS45S16160J-6CTLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存2,336	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
N25Q064A11E12A0F TR	Micron Technology Inc.	NOR FLASH 16MX4 1.8V TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,760	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	-	-	-
24LC512-E/ST	Microchip Technology	IC EEPROM 512KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存5,232	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FL064LABNFI040	Cypress Semiconductor Corp	IC FLASH NOR 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x4)	封装: 8-UDFN Exposed Pad	库存6,976	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x4)
25AA010AT-I/OT	Microchip Technology	IC EEPROM 1KBIT 10MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封装: SOT-23-6	库存62,760	EEPROM	EEPROM	1Kb (128 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
S29AL008J55BFIR10	Cypress Semiconductor Corp	IC FLASH 8M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封装: 48-VFBGA	库存5,984	FLASH	FLASH - NOR	8Mb (1M x 8, 512K x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
W25Q128FVFJP	Winbond Electronics	IC FLASH MEMORY 128MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,632	-	-	-	-	-	-	-	-	-	-	-	-
MT29F8G16ADBDAH4-AIT:D	Micron Technology Inc.	IC FLASH 8G PARALLEL FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存4,752	FLASH	FLASH - NAND	8Gb (512M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
DS28EC20Q+U	Maxim Integrated	1-W 20K EEPROM TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 20Kb (256 x 80) Memory Interface: 1-Wire® Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-TDFN-EP (3x3)	封装: 6-WDFN Exposed Pad	库存3,888	EEPROM	EEPROM	20Kb (256 x 80)	1-Wire®	-	-	-	-	-40°C ~ 85°C (TA)	Surface Mount	6-WDFN Exposed Pad	6-TDFN-EP (3x3)
CY15B104QI-20LPXC	Cypress Semiconductor Corp	IC FRAM 4MBIT 20MHZ 8GQFN Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,040	-	-	-	-	-	-	-	-	-	-	-	-
MT29F1G08ABBFAH4-AATES:F	Micron Technology Inc.	IC FLASH 1G PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存2,944	FLASH	FLASH - NAND (SLC)	1Gb (128M x 8)	Parallel	-	30ns	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
IM5116SDBBBG-6I	Intelligent Memory Ltd.	SDRAM, 512MB, 3.3V, 32MX16, 166M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-FBGA (8x8)	封装: -	Request a Quote	DRAM	SDRAM	512Mbit	LVTTL	166 MHz	15ns	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-FBGA (8x8)
W25Q16FWBYIG	Winbond Electronics	IC FLASH 16MBIT SPI/QUAD 8WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 60µs, 3ms Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, WLCSP Supplier Device Package: 8-WLCSP (1.56x2.16)	封装: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O, QPI	104 MHz	60µs, 3ms	-	1.65V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA, WLCSP	8-WLCSP (1.56x2.16)
GD25LQ80CTIG	GigaDevice Semiconductor (HK) Limited	IC FLASH 8MBIT SPI/QUAD I/O 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: - Voltage - Supply: 1.65V ~ 2.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	104 MHz	50µs, 2.4ms	-	1.65V ~ 2.1V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
54F189FLQB	National Semiconductor	STANDARD SRAM, 16X4, 32NS, CMOS Memory Type: Volatile Memory Format: RAM Technology: RAM Memory Size: 64bit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 37.5ns Access Time: 32 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-CFlatpack Supplier Device Package: 16-CFlatPack	封装: -	Request a Quote	RAM	RAM	64bit	Parallel	-	37.5ns	32 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Surface Mount	16-CFlatpack	16-CFlatPack
AT25EU0081A-SSUN-B	Renesas Electronics Operations Services Limited	8 MBIT, ULTRA LOW ENERGY, WIDE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 100 MHz Write Cycle Time - Word, Page: 3ms, 3ms Access Time: 7 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	8Mbit	SPI - Quad I/O	100 MHz	3ms, 3ms	7 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NM24C05LM8X	Fairchild Semiconductor	IC EEPROM 4KBIT I2C 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 15ms Access Time: 3.5 µs Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	100 kHz	15ms	3.5 µs	2.7V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

EMFP112A3PB-DV-F-R TR

Micron Technology Inc.

LPDDR3 SPECIAL/CUSTOM PLASTIC UF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,576

-

EDFA232A2MA-JD-F-D

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,824

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

N25Q032A13ESEC0F TR

Micron Technology Inc.

IC FLASH NOR 8MX4 SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,256

FLASH

FLASH - NOR

32Mb (8M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

M25PE40-VMC6G

Micron Technology Inc.

IC FLASH 4MBIT 75MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x3)

封装: 8-VDFN Exposed Pad

库存5,856

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x3)

IDT71V65602S150PFG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存3,200

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V25761SA183BQ

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 183MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存3,568

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

183MHz

-

5.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT6116LA35TP

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 24DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.300", 7.62mm)
Supplier Device Package: 24-PDIP

封装: 24-DIP (0.300", 7.62mm)

库存6,288

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

24-DIP (0.300", 7.62mm)

24-PDIP

IS42S16800E-75EBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

库存7,280

DRAM

SDRAM

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

MT47H128M8HQ-3:G TR

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x11.5)

封装: 60-FBGA

库存7,184

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-FBGA

60-FBGA (8x11.5)

M95080-MN6P

STMicroelectronics

IC EEPROM 8KBIT 10MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,360

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CY7C1480V33-167AXCT

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存5,520

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71T75802S200BGI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存2,624

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

200MHz

-

3.2ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71342LA20JG

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封装: 52-LCC (J-Lead)

库存2,672

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

IS45S16160J-6CTLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存2,336

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

N25Q064A11E12A0F TR

Micron Technology Inc.

NOR FLASH 16MX4 1.8V TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,760

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 125°C (TA)

-

24LC512-E/ST

Microchip Technology

IC EEPROM 512KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存5,232

EEPROM

512Kb (64K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FL064LABNFI040

Cypress Semiconductor Corp

IC FLASH NOR 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x4)

封装: 8-UDFN Exposed Pad

库存6,976

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x4)

25AA010AT-I/OT

Microchip Technology

IC EEPROM 1KBIT 10MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封装: SOT-23-6

库存62,760

EEPROM

1Kb (128 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-6

S29AL008J55BFIR10

Cypress Semiconductor Corp

IC FLASH 8M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封装: 48-VFBGA

库存5,984

FLASH

FLASH - NOR

8Mb (1M x 8, 512K x 16)

Parallel

-

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

W25Q128FVFJP

Winbond Electronics

IC FLASH MEMORY 128MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,632

-

MT29F8G16ADBDAH4-AIT:D

Micron Technology Inc.

IC FLASH 8G PARALLEL FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存4,752

FLASH

FLASH - NAND

8Gb (512M x 16)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

DS28EC20Q+U

Maxim Integrated

1-W 20K EEPROM TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 20Kb (256 x 80)
Memory Interface: 1-Wire®
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-TDFN-EP (3x3)

封装: 6-WDFN Exposed Pad

库存3,888

EEPROM

20Kb (256 x 80)

1-Wire®

-

-40°C ~ 85°C (TA)

Surface Mount

6-WDFN Exposed Pad

6-TDFN-EP (3x3)

CY15B104QI-20LPXC

Cypress Semiconductor Corp

IC FRAM 4MBIT 20MHZ 8GQFN

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,040

-

MT29F1G08ABBFAH4-AATES:F

Micron Technology Inc.

IC FLASH 1G PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存2,944

FLASH

FLASH - NAND (SLC)

1Gb (128M x 8)

Parallel

-

30ns

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

IM5116SDBBBG-6I

Intelligent Memory Ltd.

SDRAM, 512MB, 3.3V, 32MX16, 166M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-FBGA (8x8)

封装: -

Request a Quote

DRAM

SDRAM

512Mbit

LVTTL

166 MHz

15ns

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-FBGA (8x8)

W25Q16FWBYIG

Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 60µs, 3ms
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, WLCSP
Supplier Device Package: 8-WLCSP (1.56x2.16)

封装: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O, QPI

104 MHz

60µs, 3ms

-

1.65V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA, WLCSP

8-WLCSP (1.56x2.16)

GD25LQ80CTIG

GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD I/O 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: -
Voltage - Supply: 1.65V ~ 2.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

104 MHz

50µs, 2.4ms

-

1.65V ~ 2.1V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

54F189FLQB

National Semiconductor

STANDARD SRAM, 16X4, 32NS, CMOS

Memory Type: Volatile
Memory Format: RAM
Technology: RAM
Memory Size: 64bit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 37.5ns
Access Time: 32 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-CFlatpack
Supplier Device Package: 16-CFlatPack

封装: -

Request a Quote

RAM

64bit

Parallel

-

37.5ns

32 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Surface Mount

16-CFlatpack

16-CFlatPack

AT25EU0081A-SSUN-B

Renesas Electronics Operations Services Limited

8 MBIT, ULTRA LOW ENERGY, WIDE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: 3ms, 3ms
Access Time: 7 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

8Mbit

SPI - Quad I/O

100 MHz

3ms, 3ms

7 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NM24C05LM8X

Fairchild Semiconductor

IC EEPROM 4KBIT I2C 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: 3.5 µs
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

EEPROM

4Kbit

I2C

100 kHz

15ms

3.5 µs

2.7V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC