页 211 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  211/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
28153735
Micron Technology Inc.

IC FLASH PAR NOR SLC 2MX8 PQFP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,120
-
-
-
-
-
-
-
-
-
-
-
-
IS49NLS18160-33BLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 300MHZ 144BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 288Mb (16M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-FCBGA (11x18.5)
封装: 144-TFBGA
库存5,904
DRAM
DRAM
288Mb (16M x 18)
Parallel
300MHz
-
20ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-FCBGA (11x18.5)
M29F800FB5AM6F2 TR
Micron Technology Inc.

IC FLASH 8MBIT 55NS 44SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.496", 12.60mm Width)
  • Supplier Device Package: 44-SO
封装: 44-SOIC (0.496", 12.60mm Width)
库存4,304
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-SOIC (0.496", 12.60mm Width)
44-SO
CAT28C512HI12
ON Semiconductor

IC EEPROM 512KBIT 120NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
封装: 32-TFSOP (0.724", 18.40mm Width)
库存3,504
EEPROM
EEPROM
512Kb (64K x 8)
Parallel
-
5ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
IS42S32800B-6B-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存7,200
DRAM
SDRAM
256Mb (8M x 32)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MT47H32M16CC-5E:B TR
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 600ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (12x12.5)
封装: 84-TFBGA
库存6,560
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
200MHz
15ns
600ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-FBGA (12x12.5)
MT28F800B3SG-9 TET TR
Micron Technology Inc.

IC FLASH 8MBIT 90NS 44SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.496", 12.60mm Width)
  • Supplier Device Package: 44-SOP
封装: 44-SOIC (0.496", 12.60mm Width)
库存5,376
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-SOIC (0.496", 12.60mm Width)
44-SOP
AT24C1024W-10SI-2.7-T
Microchip Technology

IC EEPROM 1MBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 550ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.209", 5.30mm Width)
库存4,432
EEPROM
EEPROM
1Mb (128K x 8)
I2C
1MHz
10ms
550ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AT24C04Y1-10YI-2.7
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8MAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-MAP (3x4.9)
封装: 8-UDFN Exposed Pad
库存6,960
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
900ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-MAP (3x4.9)
AT49LV002T-12VC
Microchip Technology

IC FLASH 2MBIT 120NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
封装: 32-TFSOP (0.488", 12.40mm Width)
库存6,416
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
120ns
3 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
AT49BV4096A-15TI
Microchip Technology

IC FLASH 4MBIT 150NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30µs
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存5,776
FLASH
FLASH
4Mb (512K x 8, 256K x 16)
Parallel
-
30µs
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT49BV4096A-12TC
Microchip Technology

IC FLASH 4MBIT 120NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30µs
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存5,440
FLASH
FLASH
4Mb (512K x 8, 256K x 16)
Parallel
-
30µs
120ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT29F1HT08EMHBBJ4-3R:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,344
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
DS1250W-100IND+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
封装: 32-DIP Module (0.600", 15.24mm)
库存2,176
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
7026S25J8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
封装: 84-LCC (J-Lead)
库存3,488
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
W9412G6KH-5 TR
Winbond Electronics

IC SDRAM 128MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 50ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
封装: 66-TSSOP (0.400", 10.16mm Width)
库存7,888
DRAM
SDRAM - DDR
128Mb (8M x 16)
Parallel
200MHz
15ns
50ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
S-25C080A0I-T8T1U
SII Semiconductor Corporation

IC EEPROM 8KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存2,592
EEPROM
EEPROM
8Kb (1K x 8)
SPI
5MHz
4ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot S29GL512P10FFIR10
Cypress Semiconductor Corp

IC FLASH 512MBIT 100NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
封装: 64-LBGA
库存7,752
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
S34MS04G200TFI000
Cypress Semiconductor Corp

IC FLASH

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存16,320
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
IS61LPD51236A-250B3I
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.6ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-PBGA (13x15)
封装: 165-TBGA
库存6,768
SRAM
SRAM - Quad Port, Synchronous
18Mb (512K x 36)
Parallel
250MHz
-
2.6ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-PBGA (13x15)
28076665 A
Cypress Semiconductor Corp

IC FLASH

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,320
-
-
-
-
-
-
-
-
-
-
-
-
BR93A66RFVT-WME2
Rohm Semiconductor

MEMORY EEPROM

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
封装: 8-TSSOP (0.173", 4.40mm Width)
库存28,104
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B
MT61K512M32KPA-16:B TR
Micron Technology Inc.

IC SDRAM GDDR6 180FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SGRAM - GDDR6
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 8GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.31V ~ 1.391V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 180-TFBGA
  • Supplier Device Package: 180-FBGA (12x14)
封装: 180-TFBGA
库存3,488
DRAM
SGRAM - GDDR6
16Gb (512M x 32)
Parallel
8GHz
-
-
1.31V ~ 1.391V
0°C ~ 95°C (TC)
Surface Mount
180-TFBGA
180-FBGA (12x14)
THGBMGG9U4LBAIR
Kioxia America, Inc.

IC FLASH 512G MMC 153FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 153-VFBGA (11.5x13)
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
-
153-VFBGA (11.5x13)
CY15B108QN-40BFXIT
Infineon Technologies

FRAM

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFLGA
  • Supplier Device Package: 8-UFLGA (3.28x3.23)
封装: -
Request a Quote
FRAM
FRAM (Ferroelectric RAM)
8Mbit
SPI
40 MHz
-
9 ns
1.8V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-UFLGA
8-UFLGA (3.28x3.23)
AF032GEC5X-2001EX
ATP Electronics, Inc.

IC FLASH 256GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 256Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-FBGA
  • Supplier Device Package: 153-BGA (11.5x13)
封装: -
库存39
FLASH
FLASH - NAND (MLC)
256Gbit
eMMC
-
-
-
-
-40°C ~ 105°C
Surface Mount
153-FBGA
153-BGA (11.5x13)
W948V6KBHX5E-TR
Winbond Electronics

IC DRAM 256MBIT LVCMOS 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 256Mbit
  • Memory Interface: LVCMOS
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
封装: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR
256Mbit
LVCMOS
200 MHz
15ns
5 ns
1.7V ~ 1.9V
-25°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-VFBGA (8x9)
W948V6KBHX5I-TR
Winbond Electronics

IC DRAM 256MBIT LVCMOS 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 256Mbit
  • Memory Interface: LVCMOS
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
封装: -
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DRAM
SDRAM - Mobile LPDDR
256Mbit
LVCMOS
200 MHz
15ns
5 ns
1.7V ~ 1.9V
-40°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-VFBGA (8x9)
CY7C15631KV18-450BZC
Cypress Semiconductor Corp

IC 165FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封装: -
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Surface Mount
165-LBGA
165-FBGA (13x15)
MT53E256M16D1FW-046-WT-B
Micron Technology Inc.

LPDDR4 4G 256MX16 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封装: -
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-30°C ~ 85°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)