页 192 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W25Q16DVSSIQ	Winbond Electronics	IC FLASH 16MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存16,860	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IDT71V547S90PFI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,384	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	-	-	9ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
M50FLW080AN5G	Micron Technology Inc.	IC FLASH 8MBIT 33MHZ 40TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: - Access Time: 250ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 40-TSOP (10x20)	封装: 40-TFSOP (0.724", 18.40mm Width)	库存4,704	FLASH	FLASH - NOR	8Mb (1M x 8)	Parallel	33MHz	-	250ns	3 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	40-TFSOP (0.724", 18.40mm Width)	40-TSOP (10x20)
IS42S16160B-6B	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-LFBGA Supplier Device Package: 54-LFBGA (8x13)	封装: 54-LFBGA	库存6,976	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-LFBGA	54-LFBGA (8x13)
CY7C136-55NXIT	Cypress Semiconductor Corp	IC SRAM 16KBIT 55NS 52QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-QFP Supplier Device Package: 52-PQFP (10x10)	封装: 52-QFP	库存3,008	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-QFP	52-PQFP (10x10)
DS3065W-100#	Maxim Integrated	IC NVSRAM 8MBIT 100NS 256BGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-BGA Supplier Device Package: 256-BGA (27x27)	封装: 256-BGA	库存5,344	NVSRAM	NVSRAM (Non-Volatile SRAM)	8Mb (1M x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	256-BGA	256-BGA (27x27)
AT24C64A-10PU-2.7	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存13,572	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT49BV040-90TI	Microchip Technology	IC FLASH 4MBIT 90NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封装: 32-TFSOP (0.724", 18.40mm Width)	库存2,496	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	50µs	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
DS2502X1	Maxim Integrated	IC OTP 1KBIT 1WIRE 4WLP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Kb (1K x 1) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15µs Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLP (1.62x0.93)	封装: 4-UFBGA, WLCSP	库存42,708	EPROM	EPROM - OTP	1Kb (1K x 1)	1-Wire?	-	-	15µs	-	-40°C ~ 85°C (TA)	Surface Mount	4-UFBGA, WLCSP	4-WLP (1.62x0.93)
CY7C1670KV18-550BZXC	Cypress Semiconductor Corp	IC SRAM 144MBIT 550MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 144Mb (4M x 36) Memory Interface: Parallel Clock Frequency: 550MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存4,320	SRAM	SRAM - Synchronous, DDR II+	144Mb (4M x 36)	Parallel	550MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
70T651S10DR	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 10NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	封装: 208-BFQFP	库存4,768	SRAM	SRAM - Dual Port, Asynchronous	9Mb (256K x 36)	Parallel	-	10ns	10ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V3319S133PRF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: 128-LQFP	库存5,664	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
70V26S55J8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封装: 84-LCC (J-Lead)	库存6,736	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
MT29F128G08CBCABH6-6:A TR	Micron Technology Inc.	IC FLASH 128GBIT 152VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 152-VFBGA Supplier Device Package: 152-VFBGA (14x14)	封装: 152-VFBGA	库存7,552	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	152-VFBGA	152-VFBGA (14x14)
71321LA55TFG	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP	封装: 64-LQFP	库存7,504	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP
MT29F4G08ABADAH4-AITX:D TR	Micron Technology Inc.	IC FLASH 4GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,896	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
S29AL016J55FFAR20	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,032	FLASH	FLASH - NOR	16Mb (2M x 8, 1M x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AS7C256A-15JCN	Alliance Memory, Inc.	IC SRAM 256KBIT 15NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封装: 28-BSOJ (0.300", 7.62mm Width)	库存5,376	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
24LC32A-E/P	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存3,008	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
24LC32AT-I/SN	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存578,484	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S29GL256P90FFSS00	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封装: 64-LBGA	库存4,320	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
W632GG6MB12I	Winbond Electronics	IC DRAM 2G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (13x7.5)	封装: 96-VFBGA	库存2,080	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	-	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (13x7.5)
S29GL064N90FFIS40	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封装: 64-LBGA	库存22,968	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
MT29TZZZ5D6DKFRL-093 W.9A6	Micron Technology Inc.	IC FLASH MEM 6G LPDDR2 MLC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,200	-	-	-	-	-	-	-	-	-	-	-	-
BY25Q20BLRIG-R	BYTe Semiconductor	2 MBIT, 1.8V (1.65V TO 2.0V), -4 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: 6-USON (1.2x1.2)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	2Mbit	SPI - Quad I/O	85 MHz	3ms	6 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	6-UFDFN	6-USON (1.2x1.2)
MT62F512M64D2CZ-020-AAT-E	Micron Technology Inc.	LPDDR5 32GBIT 64 561/570 TFBGA 2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S26HL512TFPBHB000	Infineon Technologies	IC FLASH 512MBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	HyperBus	166 MHz	1.7ms	6.5 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
CAT28LV65-25	onsemi	IC EEPROM 64KBIT Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 250 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	EEPROM	EEPROM	64Kbit	-	-	5ms	250 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
NLQ26PFS-6NET	Insignis Technology Corporation	LPDDR4 2GB X16 3200MHZ CL22 10X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-FBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	0°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-FBGA (10x14.5)
27S35FM-B	Rochester Electronics, LLC	27S35FM/B Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

W25Q16DVSSIQ

Winbond Electronics

IC FLASH 16MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存16,860

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IDT71V547S90PFI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,384

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

-

9ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

M50FLW080AN5G

Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 40TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: -
Access Time: 250ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP (10x20)

封装: 40-TFSOP (0.724", 18.40mm Width)

库存4,704

FLASH

FLASH - NOR

8Mb (1M x 8)

Parallel

33MHz

-

250ns

3 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

40-TFSOP (0.724", 18.40mm Width)

40-TSOP (10x20)

IS42S16160B-6B

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-LFBGA
Supplier Device Package: 54-LFBGA (8x13)

封装: 54-LFBGA

库存6,976

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-LFBGA

54-LFBGA (8x13)

CY7C136-55NXIT

Cypress Semiconductor Corp

IC SRAM 16KBIT 55NS 52QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-QFP
Supplier Device Package: 52-PQFP (10x10)

封装: 52-QFP

库存3,008

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-QFP

52-PQFP (10x10)

DS3065W-100#

Maxim Integrated

IC NVSRAM 8MBIT 100NS 256BGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)

封装: 256-BGA

库存5,344

NVSRAM

NVSRAM (Non-Volatile SRAM)

8Mb (1M x 8)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

256-BGA

256-BGA (27x27)

AT24C64A-10PU-2.7

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存13,572

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT49BV040-90TI

Microchip Technology

IC FLASH 4MBIT 90NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

库存2,496

FLASH

4Mb (512K x 8)

Parallel

-

50µs

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

DS2502X1

Maxim Integrated

IC OTP 1KBIT 1WIRE 4WLP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Kb (1K x 1)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15µs
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLP (1.62x0.93)

封装: 4-UFBGA, WLCSP

库存42,708

EPROM

EPROM - OTP

1Kb (1K x 1)

1-Wire?

-

15µs

-

-40°C ~ 85°C (TA)

Surface Mount

4-UFBGA, WLCSP

4-WLP (1.62x0.93)

CY7C1670KV18-550BZXC

Cypress Semiconductor Corp

IC SRAM 144MBIT 550MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 144Mb (4M x 36)
Memory Interface: Parallel
Clock Frequency: 550MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存4,320

SRAM

SRAM - Synchronous, DDR II+

144Mb (4M x 36)

Parallel

550MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

70T651S10DR

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 10NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

库存4,768

SRAM

SRAM - Dual Port, Asynchronous

9Mb (256K x 36)

Parallel

-

10ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V3319S133PRF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: 128-LQFP

库存5,664

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

70V26S55J8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封装: 84-LCC (J-Lead)

库存6,736

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

MT29F128G08CBCABH6-6:A TR

Micron Technology Inc.

IC FLASH 128GBIT 152VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 152-VFBGA
Supplier Device Package: 152-VFBGA (14x14)

封装: 152-VFBGA

库存7,552

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

152-VFBGA

152-VFBGA (14x14)

71321LA55TFG

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP

封装: 64-LQFP

库存7,504

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP

MT29F4G08ABADAH4-AITX:D TR

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,896

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

S29AL016J55FFAR20

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,032

FLASH

FLASH - NOR

16Mb (2M x 8, 1M x 16)

Parallel

-

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AS7C256A-15JCN

Alliance Memory, Inc.

IC SRAM 256KBIT 15NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封装: 28-BSOJ (0.300", 7.62mm Width)

库存5,376

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

24LC32A-E/P

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存3,008

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

24LC32AT-I/SN

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存578,484

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S29GL256P90FFSS00

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封装: 64-LBGA

库存4,320

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

W632GG6MB12I

Winbond Electronics

IC DRAM 2G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (13x7.5)

封装: 96-VFBGA

库存2,080

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

-

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (13x7.5)

S29GL064N90FFIS40

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封装: 64-LBGA

库存22,968

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

MT29TZZZ5D6DKFRL-093 W.9A6

Micron Technology Inc.

IC FLASH MEM 6G LPDDR2 MLC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,200

-

BY25Q20BLRIG-R

BYTe Semiconductor

2 MBIT, 1.8V (1.65V TO 2.0V), -4

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Supplier Device Package: 6-USON (1.2x1.2)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

2Mbit

SPI - Quad I/O

85 MHz

3ms

6 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

6-UFDFN

6-USON (1.2x1.2)

MT62F512M64D2CZ-020-AAT-E

Micron Technology Inc.

LPDDR5 32GBIT 64 561/570 TFBGA 2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S26HL512TFPBHB000

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

HyperBus

166 MHz

1.7ms

6.5 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

CAT28LV65-25

onsemi

IC EEPROM 64KBIT

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 250 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

EEPROM

64Kbit

-

5ms

250 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

-

NLQ26PFS-6NET

Insignis Technology Corporation

LPDDR4 2GB X16 3200MHZ CL22 10X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-FBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

0°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-FBGA (10x14.5)

27S35FM-B

Rochester Electronics, LLC

27S35FM/B

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-