页 177 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  177/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL256S-10DHV013
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,984
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CG8233AA
Cypress Semiconductor Corp

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,424
-
-
-
-
-
-
-
-
-
-
-
-
N25Q064A13ESF41F TR
Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
封装: 16-SOIC (0.295", 7.50mm Width)
库存5,984
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
M58LT128KST8ZA6F TR
Micron Technology Inc.

IC FLASH 128MBIT 85NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
封装: 64-TBGA
库存7,392
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
52MHz
85ns
85ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
IDT71P73804S200BQ
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - DDR2
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.88ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
封装: 165-TBGA
库存5,056
SRAM
SRAM - DDR2
18Mb (1M x 18)
Parallel
200MHz
-
7.88ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
CY7C1021BN-12VXIT
Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封装: 44-BSOJ (0.400", 10.16mm Width)
库存2,576
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
MT48H8M32LFF5-10 TR
Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,224
DRAM
SDRAM - Mobile LPSDR
256Mb (8M x 32)
Parallel
100MHz
15ns
7ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
7005S35GB
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 68PGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 68-BPGA
  • Supplier Device Package: 68-PGA (29.46x29.46)
封装: 68-BPGA
库存5,696
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
68-BPGA
68-PGA (29.46x29.46)
CY14B101Q3-SFXI
Cypress Semiconductor Corp

NON VOLATILE SRAMS

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,064
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
AT88SC0104CA-MPTG
Microchip Technology

IC EEPROM 1KBIT 4MHZ M2P

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 P, Smart Card Module (TWI)
  • Supplier Device Package: M2 - P Module (TWI)
封装: M2 P, Smart Card Module (TWI)
库存6,080
EEPROM
EEPROM
1Kb (128 x 8)
I2C
4MHz
5ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
M2 P, Smart Card Module (TWI)
M2 - P Module (TWI)
hot 71V016SA12PHG8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封装: 44-TSOP (0.400", 10.16mm Width)
库存15,024
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS64WV25616EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 48TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封装: 48-TFBGA
库存12,612
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
M24M02-DRCS6TP/K
STMicroelectronics

IC EEPROM 2MBIT 1MHZ 8WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 450ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UBGA, WLCSP
  • Supplier Device Package: 8-WLCSP (3.56x2.01)
封装: 8-UBGA, WLCSP
库存285,708
EEPROM
EEPROM
2Mb (256K x 8)
I2C
1MHz
10ms
450ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UBGA, WLCSP
8-WLCSP (3.56x2.01)
hot AT45DB081E-SSHN-T
Adesto Technologies

IC FLASH 8MBIT 85MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (264 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存895,056
FLASH
FLASH
8Mb (264 Bytes x 4096 pages)
SPI
85MHz
8µs, 4ms
-
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT29F128G08AMCDBJ5-6ITR:D
Micron Technology Inc.

IC FLASH 128G PARALLEL 167MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,800
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MB85RS128TYPNF-GS-BCERE1
Fujitsu Electronics America, Inc.

IC FRAM 128K SPI 33MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,760
FRAM
FRAM (Ferroelectric RAM)
128Kb (16K x 8)
SPI
33MHz
-
-
1.8 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BR25G320FJ-3GE2
Rohm Semiconductor

SPI BUS EEPROM

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,048
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
IS43QR16256A-083RBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: 96-TFBGA
库存6,672
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.2GHz
15ns
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MT61M256M32JE-12 N:A TR
Micron Technology Inc.

IC RAM 8G PARALLEL 1.5GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: RAM
  • Technology: SGRAM - GDDR6
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 1.5GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.21 V ~ 1.29 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 180-TFBGA
  • Supplier Device Package: -
封装: 180-TFBGA
库存6,768
RAM
SGRAM - GDDR6
8Gb (256M x 32)
Parallel
1.5GHz
-
-
1.21 V ~ 1.29 V
0°C ~ 95°C (TC)
Surface Mount
180-TFBGA
-
70V9359L9PFI8
IDT, Integrated Device Technology Inc

IC SRAM 144K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存6,000
SRAM
SRAM - Dual Port, Synchronous
144Kb (8K x 18)
Parallel
-
-
9ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT52L1G32D4PG-093 WT:B TR
Micron Technology Inc.

IC DRAM LPDDR3 32G FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 1.066GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 178-VFBGA
  • Supplier Device Package: 178-FBGA (12x11.5)
封装: 178-VFBGA
库存4,768
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
1.066GHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-FBGA (12x11.5)
MT53E384M32D2DS-053 WT:E TR
Micron Technology Inc.

IC DRAM LPDDR4 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: -
  • Clock Frequency: 1.866GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,632
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C (TC)
Surface Mount
-
-
25LC320AT-H/SN16KVAO
Microchip Technology

32K 4KX8 2.5V SER EE HIGH TEMP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,472
EEPROM
EEPROM
32Kb (4K x 8)
SPI
10MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 150°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT29F1T08EEHBFJ4-R-B-TR
Micron Technology Inc.

IC FLASH 1TBIT PARALLEL 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
封装: -
Request a Quote
FLASH
FLASH - NAND (TLC)
1Tbit
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
S29PL064J60BFID20E
Infineon Technologies

IC FLASH NOR 48FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
GD25WD05CK6IGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/DUAL 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Kbit
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: 55µs, 6ms
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (1.5x1.5)
封装: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Kbit
SPI - Dual I/O
100 MHz
55µs, 6ms
12 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (1.5x1.5)
IS42S81600J-7TL
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
W631GG6NB15J
Winbond Electronics

IC DRAM 1GBIT SSTL 15 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
封装: -
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DRAM
SDRAM - DDR3
1Gbit
SSTL_15
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
MT29F2T08ELLEEG7-QB-E
Micron Technology Inc.

TLC 2T 256GX8 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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S70KS1283GABHA020
Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
封装: -
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PSRAM
PSRAM (Pseudo SRAM)
128Mbit
SPI - Octal I/O
200 MHz
35ns
35 ns
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)