页 1523 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS62WV6416DBLL-45B2LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 45NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: 48-TFBGA	库存4,848	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	45ns	45ns	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS42RM16160E-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 2.3 V ~ 3 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: 54-TFBGA	库存2,384	DRAM	SDRAM - Mobile	256Mb (16M x 16)	Parallel	133MHz	-	6ns	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
M24M01-RCS6TP/A	STMicroelectronics	IC EEPROM 1MBIT 1MHZ 8WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 500ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, WLCSP Supplier Device Package: 8-WLCSP	封装: 8-UFBGA, WLCSP	库存3,792	EEPROM	EEPROM	1Mb (128K x 8)	I2C	1MHz	5ms	500ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA, WLCSP	8-WLCSP
MT47H256M4B7-37E:A	Micron Technology Inc.	IC SDRAM 1GBIT 266MHZ 92FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 92-VFBGA Supplier Device Package: 92-FBGA (11x19)	封装: 92-VFBGA	库存3,792	DRAM	SDRAM - DDR2	1Gb (256M x 4)	Parallel	267MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	92-VFBGA	92-FBGA (11x19)
AT24C164-10PU-1.8	Microchip Technology	IC EEPROM 16KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存4,752	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT28C010-25SI	Microchip Technology	IC EEPROM 1MBIT 250NS 32SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 250ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.295", 7.50mm Width) Supplier Device Package: 32-SOIC	封装: 32-SOIC (0.295", 7.50mm Width)	库存6,624	EEPROM	EEPROM	1Mb (128K x 8)	Parallel	-	10ms	250ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-SOIC (0.295", 7.50mm Width)	32-SOIC
AT27C256R-45TC	Microchip Technology	IC OTP 256KBIT 45NS 28TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封装: 28-TSSOP (0.465", 11.80mm Width)	库存7,056	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
AT45DB021B-RI	Microchip Technology	IC FLASH 2MBIT 20MHZ 28SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (264 Bytes x 1024 pages) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.342", 8.69mm Width)	库存14,664	FLASH	FLASH	2Mb (264 Bytes x 1024 pages)	SPI	20MHz	14ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
70V05L20PFI	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	封装: 64-LQFP	库存6,944	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
7015S20PF8	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 20NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封装: 80-LQFP	库存5,904	SRAM	SRAM - Dual Port, Asynchronous	72Kb (8K x 9)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
AS6C62256-55STINTR	Alliance Memory, Inc.	IC SRAM 256KBIT 55NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-sTSOP	封装: 28-TSSOP (0.465", 11.80mm Width)	库存6,512	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-sTSOP
25LC160T-I/SN	Microchip Technology	IC EEPROM 16KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存9,360	EEPROM	EEPROM	16Kb (2K x 8)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC64FT-E/MNY	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	封装: 8-WFDFN Exposed Pad	库存6,016	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
TC58CYG0S3HQAIE	Toshiba Semiconductor and Storage	1GB SERIAL NAND 24NM SOP16 1.8V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 155µs Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	封装: 16-SOIC (0.295", 7.50mm Width)	库存5,168	FLASH	FLASH - NAND	1Gb (128M x 8)	SPI	104MHz	-	155µs	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
M93C86-WBN6P	STMicroelectronics	IC EEPROM 16KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存7,712	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CY62256NLL-55ZXI	Cypress Semiconductor Corp	IC SRAM 256KBIT 55NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	封装: 28-TSSOP (0.465", 11.80mm Width)	库存7,184	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
AS4C8M32MD2A-25BCN	Alliance Memory, Inc.	134-BALL FBGA (10X11.5X1.0) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-FBGA (10x11.5)	封装: 134-TFBGA	库存8,004	DRAM	SDRAM - Mobile LPDDR2	256Mb (8M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-20°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-FBGA (10x11.5)
IS25WP032A-JLLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 32M SPI 133MHZ WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: 8-WDFN Exposed Pad	库存5,072	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
MX25R2035FZUIH0	Macronix	IC FLASH 2MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,536	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBCAGJ4-5M:A TR	Micron Technology Inc.	TLC 256G 32GX8 VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,744	-	-	-	-	-	-	-	-	-	-	-	-
S25FL129P0XXEI909	Cypress Semiconductor Corp	IC MEMORY FLASH NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,784	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT53B384M32D2NP-062 WT:B	Micron Technology Inc.	IC DRAM 12G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,648	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT29F2T08EMLEEJ4-QD-E-TR	Micron Technology Inc.	TLC 2T 256GX8 VBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q128FWPIQ	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 60µs, 5ms Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI	104 MHz	60µs, 5ms	-	1.65V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY15V108QSN-108BKXQT	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: 6.7 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	SPI - Quad I/O, QPI	108 MHz	-	6.7 ns	1.71V ~ 1.89V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-FBGA (6x8)
W956D6KBKX7I	Winbond Electronics	64MB PSRAM X16, ADM, 133MHZ, IND Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 70 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 49-WFBGA Supplier Device Package: 49-WFBGA (4x4)	封装: -	库存936	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	Parallel	133 MHz	-	70 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	49-WFBGA	49-WFBGA (4x4)
MB85RS2MTYPNF-GS-AWE2	Fujitsu Semiconductor Memory Solution	IC FRAM 2MBIT SPI 50MHZ 8SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存3,981	FRAM	FRAM (Ferroelectric RAM)	2Mbit	SPI	50 MHz	-	-	1.8V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IS26KS512S-DPBLA200	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	封装: -	Request a Quote	FLASH	HyperFlash	512Mbit	HyperBus	166 MHz	-	96 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
CG7424AF	Infineon Technologies	IC MICROPOWER SRAM 48VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NDQ48PFQ-7NET	Insignis Technology Corporation	DDR4 4GB X8 2666MHZ CL19 7.5X10. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gbit Memory Interface: POD Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x10.6)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	4Gbit	POD	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x10.6)

IS62WV6416DBLL-45B2LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 45NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

库存4,848

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

45ns

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS42RM16160E-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 2.3 V ~ 3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

库存2,384

DRAM

SDRAM - Mobile

256Mb (16M x 16)

Parallel

133MHz

-

6ns

2.3 V ~ 3 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

M24M01-RCS6TP/A

STMicroelectronics

IC EEPROM 1MBIT 1MHZ 8WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 500ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, WLCSP
Supplier Device Package: 8-WLCSP

封装: 8-UFBGA, WLCSP

库存3,792

EEPROM

1Mb (128K x 8)

I2C

1MHz

5ms

500ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA, WLCSP

8-WLCSP

MT47H256M4B7-37E:A

Micron Technology Inc.

IC SDRAM 1GBIT 266MHZ 92FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 92-VFBGA
Supplier Device Package: 92-FBGA (11x19)

封装: 92-VFBGA

库存3,792

DRAM

SDRAM - DDR2

1Gb (256M x 4)

Parallel

267MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

92-VFBGA

92-FBGA (11x19)

AT24C164-10PU-1.8

Microchip Technology

IC EEPROM 16KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存4,752

EEPROM

16Kb (2K x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT28C010-25SI

Microchip Technology

IC EEPROM 1MBIT 250NS 32SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 250ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC

封装: 32-SOIC (0.295", 7.50mm Width)

库存6,624

EEPROM

1Mb (128K x 8)

Parallel

-

10ms

250ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-SOIC (0.295", 7.50mm Width)

32-SOIC

AT27C256R-45TC

Microchip Technology

IC OTP 256KBIT 45NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封装: 28-TSSOP (0.465", 11.80mm Width)

库存7,056

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

AT45DB021B-RI

Microchip Technology

IC FLASH 2MBIT 20MHZ 28SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (264 Bytes x 1024 pages)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.342", 8.69mm Width)

库存14,664

FLASH

2Mb (264 Bytes x 1024 pages)

SPI

20MHz

14ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

70V05L20PFI

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

库存6,944

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

7015S20PF8

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 20NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封装: 80-LQFP

库存5,904

SRAM

SRAM - Dual Port, Asynchronous

72Kb (8K x 9)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

AS6C62256-55STINTR

Alliance Memory, Inc.

IC SRAM 256KBIT 55NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-sTSOP

封装: 28-TSSOP (0.465", 11.80mm Width)

库存6,512

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-sTSOP

25LC160T-I/SN

Microchip Technology

IC EEPROM 16KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存9,360

EEPROM

16Kb (2K x 8)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC64FT-E/MNY

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

封装: 8-WFDFN Exposed Pad

库存6,016

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

TC58CYG0S3HQAIE

Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 1.8V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: -
Access Time: 155µs
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

封装: 16-SOIC (0.295", 7.50mm Width)

库存5,168

FLASH

FLASH - NAND

1Gb (128M x 8)

SPI

104MHz

-

155µs

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP

M93C86-WBN6P

STMicroelectronics

IC EEPROM 16KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存7,712

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CY62256NLL-55ZXI

Cypress Semiconductor Corp

IC SRAM 256KBIT 55NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

封装: 28-TSSOP (0.465", 11.80mm Width)

库存7,184

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

AS4C8M32MD2A-25BCN

Alliance Memory, Inc.

134-BALL FBGA (10X11.5X1.0)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-FBGA (10x11.5)

封装: 134-TFBGA

库存8,004

DRAM

SDRAM - Mobile LPDDR2

256Mb (8M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-20°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-FBGA (10x11.5)

IS25WP032A-JLLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 133MHZ WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: 8-WDFN Exposed Pad

库存5,072

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

MX25R2035FZUIH0

Macronix

IC FLASH 2MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,536

-

MT29F256G08EBCAGJ4-5M:A TR

Micron Technology Inc.

TLC 256G 32GX8 VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,744

-

S25FL129P0XXEI909

Cypress Semiconductor Corp

IC MEMORY FLASH NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,784

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT53B384M32D2NP-062 WT:B

Micron Technology Inc.

IC DRAM 12G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,648

DRAM

SDRAM - Mobile LPDDR4

12Gb (384M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT29F2T08EMLEEJ4-QD-E-TR

Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

W25Q128FWPIQ

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 60µs, 5ms
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI

104 MHz

60µs, 5ms

-

1.65V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY15V108QSN-108BKXQT

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.7 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

SPI - Quad I/O, QPI

108 MHz

-

6.7 ns

1.71V ~ 1.89V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-FBGA (6x8)

W956D6KBKX7I

Winbond Electronics

64MB PSRAM X16, ADM, 133MHZ, IND

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 70 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 49-WFBGA
Supplier Device Package: 49-WFBGA (4x4)

封装: -

库存936

PSRAM

PSRAM (Pseudo SRAM)

64Mbit

Parallel

133 MHz

-

70 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

49-WFBGA

49-WFBGA (4x4)

MB85RS2MTYPNF-GS-AWE2

Fujitsu Semiconductor Memory Solution

IC FRAM 2MBIT SPI 50MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存3,981

FRAM

FRAM (Ferroelectric RAM)

2Mbit

SPI

50 MHz

-

1.8V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IS26KS512S-DPBLA200

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

封装: -

Request a Quote

FLASH

HyperFlash

512Mbit

HyperBus

166 MHz

-

96 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

CG7424AF

Infineon Technologies

IC MICROPOWER SRAM 48VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

NDQ48PFQ-7NET

Insignis Technology Corporation

DDR4 4GB X8 2666MHZ CL19 7.5X10.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gbit
Memory Interface: POD
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x10.6)

封装: -

Request a Quote

DRAM

SDRAM - DDR4

4Gbit

POD

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x10.6)