页 143 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W632GG8KB-12	Winbond Electronics	IC SDRAM 2GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-WBGA (10.5x8)	封装: 78-TFBGA	库存6,096	DRAM	SDRAM - DDR3	2Gb (256M x 8)	Parallel	800MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-WBGA (10.5x8)
IDT71V3577S75PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存6,688	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	-	-	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V3559SA85BQGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存7,168	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT71024S20Y8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	封装: 32-BSOJ (0.400", 10.16mm Width)	库存4,064	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
M93C76-MN6P	STMicroelectronics	IC EEPROM 8KBIT 1MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,264	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	2MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AT93C56-10PI-2.5	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存2,080	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	10ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT49F002NT-90VC	Microchip Technology	IC FLASH 2MBIT 90NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	封装: 32-TFSOP (0.488", 12.40mm Width)	库存5,744	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
AT27C4096-15JC	Microchip Technology	IC OTP 4MBIT 150NS 44PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	封装: 44-LCC (J-Lead)	库存7,440	EPROM	EPROM - OTP	4Mb (256K x 16)	Parallel	-	-	150ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
CY7C1472V33-200AXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存4,000	SRAM	SRAM - Synchronous	72Mb (4M x 18)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
S29GL01GT13TFNV13	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 130ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,040	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	60ns	130ns	1.65 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
MT46H32M16LFBF-6 AAT:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封装: 60-VFBGA	库存2,768	DRAM	SDRAM - Mobile LPDDR	512Mb (32M x 16)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
EDB1332BDBH-1DAAT-F-R TR	Micron Technology Inc.	IC SDRAM 1GBIT 533MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	封装: 134-VFBGA	库存6,544	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
MT29F1G16ABBEAHC-IT:E TR	Micron Technology Inc.	IC FLASH 1GBIT 25NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (10.5x13)	封装: 63-VFBGA	库存3,680	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (10.5x13)
MX25L12835FZ2I-10G	Macronix	IC FLASH 128MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 30µs, 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: 8-WDFN Exposed Pad	库存13,932	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	30µs, 1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
S-24CM01CI-J8T1U4	SII Semiconductor Corporation	IC EEPROM 1MBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 500ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存88,308	EEPROM	EEPROM	1Mb (128K x 8)	I2C	1MHz	5ms	500ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
W25Q128JVBIM TR	Winbond Electronics	IC FLASH 128MBIT 133MHZ 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: 24-TBGA	库存5,888	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
N25Q032A13ESCA0F TR	Micron Technology Inc.	IC FLASH 32MBIT 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (8M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP2	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,264	FLASH	FLASH - NOR	32Mb (8M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP2
AT24C512C-SSHD-T	Microchip Technology	IC EEPROM 512KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,080,440	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	550ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
93C86CT-E/SN	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,240	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7130LA100PDG	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 100NS 48DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	封装: 48-DIP (0.600", 15.24mm)	库存6,432	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
RM24C512C-LTAI-B	Adesto Technologies	IC EEPROM 512KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512kb (128B Page Size) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 100µs, 5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存57,738	EEPROM	EEPROM	512kb (128B Page Size)	I2C	1MHz	100µs, 5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
70V07L35JGI8	IDT, Integrated Device Technology Inc	IC SRAM 256K PARALLEL 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封装: 68-LCC (J-Lead)	库存4,144	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
MT61K256M32JE-12:A	Micron Technology Inc.	IC RAM 8G PARALLEL 1.5GHZ FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR6 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.5GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.31 V ~ 1.39 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: -	封装: 180-TFBGA	库存4,528	RAM	SGRAM - GDDR6	8Gb (256M x 32)	Parallel	1.5GHz	-	-	1.31 V ~ 1.39 V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	-
MT30AZZZCDBZTPEQ-031-W-16D	Micron Technology Inc.	MODULE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS64LPS12836EC-200TQLA3-TR	ISSI, Integrated Silicon Solution Inc	4Mb,Pipeline,Sync,128K x 36,200M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3.1 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封装: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	200 MHz	-	3.1 ns	3.135V ~ 3.465V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
MT62F1536M32D4DS-023-WT-B-TR	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
UPD46365184BF1-E33-EQ1-A	Renesas Electronics Corporation	QDR SRAM, 2MX18, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S29GL512N10TFI010	Infineon Technologies	IC FLASH 512MBIT PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封装: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	Parallel	-	100ns	100 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
041811CLAB-5	IBM	IC SRAM 1MBIT 119BGA Memory Type: - Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.3V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-BGA (17x7)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	1Mbit	-	-	-	-	3.3V	-	Surface Mount	119-BGA	119-BGA (17x7)
SST26VF080AT-104I-SN	Microchip Technology	IC FLASH 8MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存18,765	FLASH	FLASH	8Mbit	SPI - Quad I/O	104 MHz	1.5ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

W632GG8KB-12

Winbond Electronics

IC SDRAM 2GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-WBGA (10.5x8)

封装: 78-TFBGA

库存6,096

DRAM

SDRAM - DDR3

2Gb (256M x 8)

Parallel

800MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-WBGA (10.5x8)

IDT71V3577S75PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存6,688

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

-

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V3559SA85BQGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存7,168

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT71024S20Y8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

封装: 32-BSOJ (0.400", 10.16mm Width)

库存4,064

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

M93C76-MN6P

STMicroelectronics

IC EEPROM 8KBIT 1MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,264

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

2MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AT93C56-10PI-2.5

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存2,080

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

10ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT49F002NT-90VC

Microchip Technology

IC FLASH 2MBIT 90NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

封装: 32-TFSOP (0.488", 12.40mm Width)

库存5,744

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

AT27C4096-15JC

Microchip Technology

IC OTP 4MBIT 150NS 44PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

封装: 44-LCC (J-Lead)

库存7,440

EPROM

EPROM - OTP

4Mb (256K x 16)

Parallel

-

150ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

CY7C1472V33-200AXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存4,000

SRAM

SRAM - Synchronous

72Mb (4M x 18)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

S29GL01GT13TFNV13

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 130ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,040

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

60ns

130ns

1.65 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

MT46H32M16LFBF-6 AAT:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封装: 60-VFBGA

库存2,768

DRAM

SDRAM - Mobile LPDDR

512Mb (32M x 16)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

EDB1332BDBH-1DAAT-F-R TR

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

封装: 134-VFBGA

库存6,544

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

MT29F1G16ABBEAHC-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (10.5x13)

封装: 63-VFBGA

库存3,680

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (10.5x13)

MX25L12835FZ2I-10G

Macronix

IC FLASH 128MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 30µs, 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: 8-WDFN Exposed Pad

库存13,932

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

30µs, 1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

S-24CM01CI-J8T1U4

SII Semiconductor Corporation

IC EEPROM 1MBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 500ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存88,308

EEPROM

1Mb (128K x 8)

I2C

1MHz

5ms

500ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

W25Q128JVBIM TR

Winbond Electronics

IC FLASH 128MBIT 133MHZ 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: 24-TBGA

库存5,888

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

N25Q032A13ESCA0F TR

Micron Technology Inc.

IC FLASH 32MBIT 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP2

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,264

FLASH

FLASH - NOR

32Mb (8M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP2

AT24C512C-SSHD-T

Microchip Technology

IC EEPROM 512KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,080,440

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

550ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

93C86CT-E/SN

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,240

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7130LA100PDG

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 100NS 48DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

封装: 48-DIP (0.600", 15.24mm)

库存6,432

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

RM24C512C-LTAI-B

Adesto Technologies

IC EEPROM 512KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512kb (128B Page Size)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 100µs, 5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存57,738

EEPROM

512kb (128B Page Size)

I2C

1MHz

100µs, 5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

70V07L35JGI8

IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

库存4,144

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

MT61K256M32JE-12:A

Micron Technology Inc.

IC RAM 8G PARALLEL 1.5GHZ FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR6
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.5GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.31 V ~ 1.39 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: -

封装: 180-TFBGA

库存4,528

RAM

SGRAM - GDDR6

8Gb (256M x 32)

Parallel

1.5GHz

-

1.31 V ~ 1.39 V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

-

MT30AZZZCDBZTPEQ-031-W-16D

Micron Technology Inc.

MODULE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IS64LPS12836EC-200TQLA3-TR

ISSI, Integrated Silicon Solution Inc

4Mb,Pipeline,Sync,128K x 36,200M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封装: -

Request a Quote

SRAM

SRAM - Standard

4Mbit

Parallel

200 MHz

-

3.1 ns

3.135V ~ 3.465V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

MT62F1536M32D4DS-023-WT-B-TR

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

UPD46365184BF1-E33-EQ1-A

Renesas Electronics Corporation

QDR SRAM, 2MX18, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S29GL512N10TFI010

Infineon Technologies

IC FLASH 512MBIT PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封装: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

Parallel

-

100ns

100 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

041811CLAB-5

IBM

IC SRAM 1MBIT 119BGA

Memory Type: -
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.3V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-BGA (17x7)

封装: -

Request a Quote

SRAM

SRAM - Synchronous

1Mbit

-

3.3V

-

Surface Mount

119-BGA

119-BGA (17x7)

SST26VF080AT-104I-SN

Microchip Technology

IC FLASH 8MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存18,765

FLASH

8Mbit

SPI - Quad I/O

104 MHz

1.5ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC