图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 133MHZ 90BGA
|
封装: 90-TFBGA |
库存4,160 |
|
DRAM | SDRAM - Mobile | 128Mb (4M x 32) | Parallel | 133MHz | - | 5.4ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
||
Cypress Semiconductor Corp |
IC SRAM 4MB FAST
|
封装: - |
库存3,744 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
IC FLASH 256GBIT 52MHZ 153WFBGA
|
封装: 153-WFBGA |
库存6,944 |
|
FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | 52MHz | - | - | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | Surface Mount | 153-WFBGA | 153-WFBGA (11.5x13) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44TSOP
|
封装: 44-TSOP (0.400", 10.16mm Width) |
库存3,728 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
||
Cypress Semiconductor Corp |
IC SRAM 4MBIT 55NS 32SOIC
|
封装: 32-SOIC (0.445", 11.30mm Width) |
库存4,128 |
|
SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOIC |
||
Micron Technology Inc. |
IC SDRAM 512MBIT 133MHZ 66TSOP
|
封装: 66-TSSOP (0.400", 10.16mm Width) |
库存5,712 |
|
DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 133MHz | 15ns | 750ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
||
Microchip Technology |
IC EEPROM 256KBIT 90NS 28DIP
|
封装: 28-DIP (0.600", 15.24mm) |
库存4,384 |
|
EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
||
Micron Technology Inc. |
IC FLASH 64GBIT 100MHZ VBGA
|
封装: 100-VBGA |
库存2,656 |
|
FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | 100MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-VBGA | 100-VBGA (12x18) |
||
Micron Technology Inc. |
IC FLASH 64GBIT 167MHZ 132VBGA
|
封装: - |
库存4,896 |
|
FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | 166MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
||
IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 7.5NS 100TQFP
|
封装: 100-LQFP |
库存6,480 |
|
SRAM | SRAM - Synchronous ZBT | 18Mb (1M x 18) | Parallel | - | - | 7.5ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 165CABGA
|
封装: 165-TBGA |
库存6,128 |
|
SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 119BGA
|
封装: 119-BGA |
库存5,296 |
|
SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 8.5NS 100TQFP
|
封装: 100-LQFP |
库存2,736 |
|
SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | - | - | 8.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 54BGA
|
封装: 54-TFBGA |
库存2,832 |
|
DRAM | SDRAM - Mobile | 64Mb (4M x 16) | Parallel | 166MHz | - | 5.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
||
Microchip Technology |
IC EEPROM 16KBIT 3MHZ 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,304 |
|
EEPROM | EEPROM | 16Kb (1K x 16) | SPI | 3MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC EEPROM 16KBIT 400KHZ 8DIP
|
封装: 8-DIP (0.300", 7.62mm) |
库存3,088 |
|
EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
STMicroelectronics |
IC EEPROM 128KBIT 400KHZ 8TSSOP
|
封装: 8-TSSOP (0.173", 4.40mm Width) |
库存6,800 |
|
EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 1MHz | 5ms | 450ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
Maxim Integrated |
IC OTP 1KBIT 1WIRE TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存16,800 |
|
EPROM | EPROM - OTP | 1Kb (1K x 1) | 1-Wire? | - | - | 15µs | - | -40°C ~ 85°C (TA) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
||
Micron Technology Inc. |
IC SDRAM LPDDR4 32GBIT 512MX64 F
|
封装: - |
库存4,176 |
|
DRAM | SDRAM - Mobile LPDDR4 | - | - | - | - | - | - | - | - | - | - |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ
|
封装: 134-TFBGA |
库存5,040 |
|
DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
||
Cypress Semiconductor Corp |
IC FLASH 32M PARALLEL 64BGA
|
封装: 64-LBGA |
库存4,112 |
|
FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
||
Cypress Semiconductor Corp |
IC FLASH MEM NOR 48FBGA
|
封装: - |
库存2,416 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA
|
封装: - |
库存5,776 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
IC RAM
|
封装: - |
Request a Quote |
|
SRAM | SRAM - Dual Port, Asynchronous | 1Mbit | Parallel | - | 12ns | 12 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
Winbond Electronics |
2GB LPDDR4X, X16, 1600MHZ, -40C~
|
封装: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL_06 | 1.6 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
||
Winbond Electronics |
IC DRAM 2GBIT PAR 96VFBGA
|
封装: - |
Request a Quote |
|
DRAM | SDRAM - DDR3 | 2Gbit | Parallel | 533 MHz | - | 20 ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-VFBGA (7.5x13) |
||
MoSys, Inc. |
IC MEMORY RMW 0.5GB ALU FCBGA
|
封装: - |
Request a Quote |
|
RAM | SRAM, RLDRAM | 576Mbit | Parallel | - | - | 3.2 ns | - | - | Surface Mount | 288-BGA, FCBGA | 288-FCBGA (19x19) |
||
Winbond Electronics |
IC FLASH 64MBIT SPI/QUAD 8XSON
|
封装: - |
Request a Quote |
|
FLASH | FLASH - NOR | 64Mbit | SPI - Quad I/O | 133 MHz | 3ms | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-XDFN Exposed Pad | 8-XSON (4x4) |
||
Micron Technology Inc. |
IC SRAM 8MBIT PAR 83MHZ 100TQFP
|
封装: - |
Request a Quote |
|
SRAM | SRAM - ZBT | 8Mbit | Parallel | 83 MHz | - | 9 ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20.1) |
||
Renesas Electronics Corporation |
IC SRAM
|
封装: - |
Request a Quote |
|
SRAM | SRAM - Dual Port, Asynchronous | 16Kbit | Parallel | - | - | - | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |