页 1229 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL01GS-11TFV01	Cypress Semiconductor Corp	IC MEM FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,592	-	-	-	-	-	-	-	-	-	-	-	-
W25Q128FVCIF	Winbond Electronics	IC FLASH 128MBIT 104MHZ 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: 24-TBGA	库存5,616	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS66WV51216DBLL-55TLI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 8MBIT 55NS 44TSOP Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存363,900	PSRAM	PSRAM (Pseudo SRAM)	8Mb (512K x 16)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS42S32160B-7BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-LFBGA (13x11)	封装: 90-LFBGA	库存5,696	DRAM	SDRAM	512Mb (16M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-LFBGA	90-LFBGA (13x11)
CY7C1514V18-250BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存7,936	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
M27V322-100B1	STMicroelectronics	IC OTP 32MBIT 100NS 42DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 42-DIP (0.600", 15.24mm) Supplier Device Package: 42-PDIP	封装: 42-DIP (0.600", 15.24mm)	库存4,096	EPROM	EPROM - OTP	32Mb (2M x 16)	Parallel	-	-	100ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	42-DIP (0.600", 15.24mm)	42-PDIP
CY7C027V-15AXCT	Cypress Semiconductor Corp	IC SRAM 512KBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存5,792	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT25320AN-10SU-2.7	Microchip Technology	IC EEPROM 32KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存292,980	EEPROM	EEPROM	32Kb (4K x 8)	SPI	20MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
709269L15PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存2,016	SRAM	SRAM - Dual Port, Synchronous	256Kb (16K x 16)	Parallel	-	-	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V65603S133BQI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存5,200	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS64WV51216EDBLL-10CTLA3	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存5,280	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
PC28F512M29EWHF	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封装: 64-LBGA	库存6,736	FLASH	FLASH - NOR	512Mb (64M x 8, 32M x 16)	Parallel	-	100ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
EDB1332BDBH-1DIT-F-R TR	Micron Technology Inc.	IC SDRAM 1GBIT 533MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	封装: 134-VFBGA	库存5,424	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
IS42VM32200M-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: 90-TFBGA	库存7,424	DRAM	SDRAM - Mobile	64Mb (2M x 32)	Parallel	133MHz	-	6ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
SST39VF401C-70-4C-B3KE	Microchip Technology	IC FLASH 4MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: 48-TFBGA	库存4,496	FLASH	FLASH	4Mb (256K x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
93AA56B-I/MS	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存6,032	EEPROM	EEPROM	2Kb (128 x 16)	SPI	2MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
W9864G6KH-6	Winbond Electronics	IC SDRAM 64MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存316,068	DRAM	SDRAM	64Mb (4M x 16)	Parallel	166MHz	-	5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY7C1321KV18-250BZXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存7,488	SRAM	SRAM - Synchronous, DDR II	18Mb (512K x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AS4C16M16MD1-6BCN	Alliance Memory, Inc.	IC SDRAM 256MBIT 166MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FPBGA (8x9)	封装: 60-TFBGA	库存13,794	DRAM	SDRAM - Mobile DDR	256Mb (16M x 16)	Parallel	166MHz	15ns	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	Surface Mount	60-TFBGA	60-FPBGA (8x9)
24AA32ASC-I/W16K	Microchip Technology	IC EEPROM 32K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存4,640	EEPROM	EEPROM	32Kb (4K x 8)	I²C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
MX30LF1GE8AB-XKI	Macronix	IC FLASH 1GBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,880	-	-	-	-	-	-	-	-	-	-	-	-
IS25WP128F-JKLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: 8-WDFN Exposed Pad	库存4,864	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
S99-50304	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,480	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08EEHAFJ4-3RES:A TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,160	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
K6R1016C1D-TI10T00	Samsung	SRAM ASYNC FAST 1M 64KX16 5V 44- Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: - Voltage - Supply: 5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	10ns	-	5V	0°C ~ 70°C (TA)	Surface Mount	-	44-TSOP II
MT55V1MV18FT-11	Micron Technology Inc.	IC SRAM 18MBIT PAR 90MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 90 MHz Write Cycle Time - Word, Page: - Access Time: 8.5 ns Voltage - Supply: 2.375V ~ 2.625V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM - ZBT	18Mbit	Parallel	90 MHz	-	8.5 ns	2.375V ~ 2.625V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
CAT93C56SIT-FB	onsemi	IC EEPROM 2KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	2Kbit	Microwire	2 MHz	-	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT28C256F-20FM-883	Atmel	IC EEPROM 256KBIT PAR 28FLATPK Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 200 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 28-CFlatPack Supplier Device Package: 28-FlatPack, Ceramic Bottom-Brazed	封装: -	Request a Quote	EEPROM	EEPROM	256Kbit	Parallel	-	3ms	200 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TC)	Surface Mount	28-CFlatPack	28-FlatPack, Ceramic Bottom-Brazed
CDP1853CD-B	Rochester Electronics, LLC	CDP1853CD/B Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MEM3800-64U128CF-C	ProLabs	Cisco MEM3800-64U128CF Compatibl Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS29GL01GS-11TFV01

Cypress Semiconductor Corp

IC MEM FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,592

-

W25Q128FVCIF

Winbond Electronics

IC FLASH 128MBIT 104MHZ 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: 24-TBGA

库存5,616

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS66WV51216DBLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 8MBIT 55NS 44TSOP

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存363,900

PSRAM

PSRAM (Pseudo SRAM)

8Mb (512K x 16)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS42S32160B-7BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-LFBGA (13x11)

封装: 90-LFBGA

库存5,696

DRAM

SDRAM

512Mb (16M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-LFBGA

90-LFBGA (13x11)

CY7C1514V18-250BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存7,936

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

M27V322-100B1

STMicroelectronics

IC OTP 32MBIT 100NS 42DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 42-DIP (0.600", 15.24mm)
Supplier Device Package: 42-PDIP

封装: 42-DIP (0.600", 15.24mm)

库存4,096

EPROM

EPROM - OTP

32Mb (2M x 16)

Parallel

-

100ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

42-DIP (0.600", 15.24mm)

42-PDIP

CY7C027V-15AXCT

Cypress Semiconductor Corp

IC SRAM 512KBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存5,792

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT25320AN-10SU-2.7

Microchip Technology

IC EEPROM 32KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存292,980

EEPROM

32Kb (4K x 8)

SPI

20MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

709269L15PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存2,016

SRAM

SRAM - Dual Port, Synchronous

256Kb (16K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V65603S133BQI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存5,200

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS64WV51216EDBLL-10CTLA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存5,280

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

PC28F512M29EWHF

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

库存6,736

FLASH

FLASH - NOR

512Mb (64M x 8, 32M x 16)

Parallel

-

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

EDB1332BDBH-1DIT-F-R TR

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

封装: 134-VFBGA

库存5,424

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

IS42VM32200M-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

库存7,424

DRAM

SDRAM - Mobile

64Mb (2M x 32)

Parallel

133MHz

-

6ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

SST39VF401C-70-4C-B3KE

Microchip Technology

IC FLASH 4MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

库存4,496

FLASH

4Mb (256K x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

93AA56B-I/MS

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存6,032

EEPROM

2Kb (128 x 16)

SPI

2MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

W9864G6KH-6

Winbond Electronics

IC SDRAM 64MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存316,068

DRAM

SDRAM

64Mb (4M x 16)

Parallel

166MHz

-

5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY7C1321KV18-250BZXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存7,488

SRAM

SRAM - Synchronous, DDR II

18Mb (512K x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AS4C16M16MD1-6BCN

Alliance Memory, Inc.

IC SDRAM 256MBIT 166MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FPBGA (8x9)

封装: 60-TFBGA

库存13,794

DRAM

SDRAM - Mobile DDR

256Mb (16M x 16)

Parallel

166MHz

15ns

-

1.7 V ~ 1.95 V

-25°C ~ 85°C (TJ)

Surface Mount

60-TFBGA

60-FPBGA (8x9)

24AA32ASC-I/W16K

Microchip Technology

IC EEPROM 32K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存4,640

EEPROM

32Kb (4K x 8)

I²C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

MX30LF1GE8AB-XKI

Macronix

IC FLASH 1GBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,880

-

IS25WP128F-JKLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: 8-WDFN Exposed Pad

库存4,864

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

S99-50304

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,480

-

MT29F512G08EEHAFJ4-3RES:A TR

Micron Technology Inc.

IC FLASH 512G PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,160

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

K6R1016C1D-TI10T00

Samsung

SRAM ASYNC FAST 1M 64KX16 5V 44-

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: -
Voltage - Supply: 5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 44-TSOP II

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

10ns

-

5V

0°C ~ 70°C (TA)

Surface Mount

-

44-TSOP II

MT55V1MV18FT-11

Micron Technology Inc.

IC SRAM 18MBIT PAR 90MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 90 MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5 ns
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

Request a Quote

SRAM

SRAM - ZBT

18Mbit

Parallel

90 MHz

-

8.5 ns

2.375V ~ 2.625V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

CAT93C56SIT-FB

onsemi

IC EEPROM 2KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

EEPROM

2Kbit

Microwire

2 MHz

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT28C256F-20FM-883

Atmel

IC EEPROM 256KBIT PAR 28FLATPK

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 200 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-CFlatPack
Supplier Device Package: 28-FlatPack, Ceramic Bottom-Brazed

封装: -

Request a Quote

EEPROM

256Kbit

Parallel

-

3ms

200 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TC)

Surface Mount

28-CFlatPack

28-FlatPack, Ceramic Bottom-Brazed

CDP1853CD-B

Rochester Electronics, LLC

CDP1853CD/B

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MEM3800-64U128CF-C

ProLabs

Cisco MEM3800-64U128CF Compatibl

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-