页 102 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  102/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS45S16800E-7BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存2,144
DRAM
SDRAM
128Mb (8M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot IDT71V3576S150PF
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存5,744
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
709159L6PF
IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 6NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 72Kb (8K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存4,784
SRAM
SRAM - Dual Port, Synchronous
72Kb (8K x 9)
Parallel
-
-
6ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY7C1414AV18-167BZC
Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封装: 165-LBGA
库存4,992
SRAM
SRAM - Synchronous, QDR II
36Mb (1M x 36)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
M50FLW040AN5G
Micron Technology Inc.

IC FLASH 4MBIT 33MHZ 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP (10x20)
封装: 40-TFSOP (0.724", 18.40mm Width)
库存5,984
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
33MHz
-
250ns
3 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP (10x20)
hot M29F400BT90N1
Micron Technology Inc.

IC FLASH 4MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存41,352
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
90ns
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
hot CY7C1049DV33-10ZSXI
Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封装: 44-TSOP (0.400", 10.16mm Width)
库存452,736
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
AT28C64E-12TU
Microchip Technology

IC EEPROM 64KBIT 120NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
封装: 28-TSSOP (0.465", 11.80mm Width)
库存3,136
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
200µs
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
MT46V128M4TG-75E:D
Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (128M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
封装: 66-TSSOP (0.400", 10.16mm Width)
库存7,216
DRAM
SDRAM - DDR
512Mb (128M x 4)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
MT29E3T08EUHBBM4-3ES:B TR
Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 3Tb (384G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,392
FLASH
FLASH - NAND
3Tb (384G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS64LPS102436B-166TQLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
封装: 100-LQFP
库存7,248
SRAM
SRAM - Synchronous
36Mb (1M x 36)
Parallel
166MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 125°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
709089S15PF
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存6,800
SRAM
SRAM - Dual Port, Synchronous
512Kb (64K x 8)
Parallel
-
-
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
W9725G8KB25I TR
Winbond Electronics

IC SDRAM 256MBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-WBGA (8x12.5)
封装: 60-TFBGA
库存2,976
DRAM
SDRAM - DDR2
256Mb (32M x 8)
Parallel
200MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
60-TFBGA
60-WBGA (8x12.5)
93C76CT-I/MC
Microchip Technology

IC EEPROM 8KBIT 3MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8, 512 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
封装: 8-VFDFN Exposed Pad
库存4,240
EEPROM
EEPROM
8Kb (1K x 8, 512 x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
hot 25LC256-E/SN
Microchip Technology

IC EEPROM 256KBIT 10MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存139,260
EEPROM
EEPROM
256Kb (32K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NM27C010V150
ON Semiconductor

IC EPROM 1M PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (14x11.46)
封装: 32-LCC (J-Lead)
库存6,288
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (14x11.46)
CY62157H30-45BVXAT
Cypress Semiconductor Corp

CY62157H30-45BVXAT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
封装: 48-VFBGA
库存4,016
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
R1RW0416DGE-2PR#B0
Renesas Electronics America

IC SRAM 4M FAST 44-SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封装: 44-BSOJ (0.400", 10.16mm Width)
库存4,560
SRAM
SRAM
4Mb (256K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
W25Q256FVEJF
Winbond Electronics

IC FLASH MEMORY 256MB

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,720
-
-
-
-
-
-
-
-
-
-
-
-
S71PL064JA0BFW0P0G
Cypress Semiconductor Corp

IC FLASH MEMORY SMD

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,072
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4DT-053 AIT:D TR
Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,392
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 95°C (TC)
-
-
-
AT27C080-90JU-T
Microchip Technology

IC EPROM 8M PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存14,340
EPROM
EPROM - OTP
8Mb (1M x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
W63AH6NBVACI
Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 1Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 178-VFBGA
  • Supplier Device Package: 178-VFBGA (11x11.5)
封装: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR3
1Gbit
HSUL_12
933 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-VFBGA (11x11.5)
SM662GXC-BFST
Silicon Motion, Inc.

IC FLASH 512GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
封装: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)
MT60B2G8HB-56B-G-TR
Micron Technology Inc.

DDR5 16G 2GX8 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
7027S12PFI8
Renesas Electronics Corporation

IC RAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
512Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT29F2T08EELCHD4-QC-C-TR
Micron Technology Inc.

TLC 2T 256GX8 FBGA DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
HM1-6504S-9
Harris Corporation

IC SRAM 4KBIT PARALLEL 18CERDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 170ns
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-CERDIP
封装: -
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SRAM
SRAM - Asynchronous
4Kbit
Parallel
-
170ns
120 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
18-DIP (0.300", 7.62mm)
18-CERDIP
IS43TR16640B-125KBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: -
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DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MT53E2G32D4DE-046-WT-C
Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封装: -
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DRAM
SDRAM - Mobile LPDDR4X
64Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-25°C ~ 85°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)