页 88 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  88/567
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IRG4RC20FPBF
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,608
FS215R04A1E3DBOMA1
Infineon Technologies

IGBT MODULES

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,544
IPD110N12N3GBUMA1
Infineon Technologies

MOSFET N-CH 120V 75A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,552
IRF6715MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 34A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封装: DirectFET? Isometric MX
库存2,256
BSP316PL6327HTSA1
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存7,040
hot IRF2204LPBF
Infineon Technologies

MOSFET N-CH 40V 170A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存66,516
IPB80N04S304ATMA1
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,776
IPU135N08N3 G
Infineon Technologies

MOSFET N-CH 80V 50A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存6,816
BSP298H6327XUSA1
Infineon Technologies

MOSFET N-CH 400V 500MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存34,704
BSS126H6906XTSA1
Infineon Technologies

MOSFET N-CH 600V 0.021A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存42,042
PTFB192557SHV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS H-34288G-4/2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: H-34288G-4/2
  • Supplier Device Package: H-34288G-4/2
封装: H-34288G-4/2
库存5,872
TLE4699EXUMA1
Infineon Technologies

IC REG LINEAR 5V 200MA 14SSOP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.35V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 100µA ~ 10mA
  • PSRR: 65dB (100Hz)
  • Control Features: Enable, Reset
  • Protection Features: Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-SSOP-14-EP
封装: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
库存24,228
AUIR3316S
Infineon Technologies

IC SW LOW EMI CURR SENSE D2PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 26 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 23A
  • Rds On (Typ): 5.5 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Adjustable), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2PAK
封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
库存6,000
hot AUIPS1041LTR
Infineon Technologies

IC SW IPS 1CH LOW SIDE SOT223

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.5A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存60,000
TLD55411QVXUMA1
Infineon Technologies

IC LED DRVR DCDC CTRLR 48VQFN

  • Type: DC DC Controller
  • Topology: Half-Bridge
  • Internal Switch(s): No
  • Number of Outputs: 4
  • Voltage - Supply (Min): 4.5V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 55V
  • Current - Output / Channel: -
  • Frequency: 200kHz ~ 700kHz
  • Dimming: Analog, PWM
  • Applications: Automotive
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
封装: 48-VFQFN Exposed Pad
库存7,376
IRS2334MPBF
Infineon Technologies

IC MOSFET DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-VFQFN Exposed Pad
  • Supplier Device Package: 28-MLPQ (5x5)
封装: 28-VFQFN Exposed Pad
库存2,336
ICE1HS01GHUMA1
Infineon Technologies

IC CTRLR RESONATE MODE 8DSO

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: -
  • Topology: Half-Bridge
  • Voltage - Start Up: 12V
  • Voltage - Supply (Vcc/Vdd): 10.2 V ~ 18 V
  • Duty Cycle: 50%
  • Frequency - Switching: 50kHz ~ 609kHz
  • Power (Watts): -
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
  • Control Features: Frequency Control
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
  • Mounting Type: Surface Mount
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,200
ICE3B0365JGXUMA1
Infineon Technologies

IC OFFLINE CTRLR SMPS OTP DSO16

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
  • Duty Cycle: 75%
  • Frequency - Switching: 67kHz
  • Power (Watts): 22W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: Soft Start
  • Operating Temperature: -25°C ~ 130°C (TJ)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
  • Supplier Device Package: PG-DSO-12
  • Mounting Type: Surface Mount
封装: 16-SOIC (0.154", 3.90mm Width) 12 leads
库存2,176
BGT24MTR12E6327XUMA1
Infineon Technologies

IC MMIC 24GHZ TWIN IQ RX 32QFN

  • Function: Transceiver
  • Frequency: 24GHz ~ 24.25GHz
  • RF Type: General Purpose
  • Secondary Attributes: -
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5.5x4.5)
封装: 32-VFQFN Exposed Pad
库存7,776
hot PVT312S-TPBF
Infineon Technologies

IC RELAY PHOTOVO 250V 190MA 6SMD

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 10 Ohm
  • Load Current: 190mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 250 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SMD (0.300", 7.62mm)
  • Supplier Device Package: 6-SMT
  • Relay Type: Relay
封装: 6-SMD (0.300", 7.62mm)
库存77,040
ACCESSORY34092NOSA1
Infineon Technologies

ACCESSORY IGBT MODULEE

  • Type: -
  • Configuration: -
  • Current: -
  • Voltage: -
  • Voltage - Isolation: -
  • Package / Case: -
封装: -
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D950N22TB01XPSA1
Infineon Technologies

DIODE GEN PURP 2.2KV 1024A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1024A
  • Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, APuk
  • Supplier Device Package: -
  • Operating Temperature - Junction: 180°C
封装: -
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DD180N20SHPSA1
Infineon Technologies

DIODE MOD GP 2000V 226A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io) (per Diode): 226A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
封装: -
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CY8C4148AZES565XQLA1
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
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IM535U6DXKMA1
Infineon Technologies

IM535U6DXKMA1

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 30 A
  • Voltage: 600 V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: -
封装: -
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D931SH65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 1220A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1220A
  • Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封装: -
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D121N12BXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
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CY9AF116NAPMC-GE1
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 83
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
封装: -
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IKZA50N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 274 W
  • Switching Energy: 230µJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 19ns/140ns
  • Test Condition: 400V, 50A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存618
SPI11N60S5
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
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