页 65 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  65/567
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hot IRG4PC30KD
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存6,552
IRFH7194TRPBF
Infineon Technologies

MOSFET N-CH 100V 11A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存2,944
IRL3715ZSTRL
Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,136
IRFR4105Z
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,944
IRF7805ATR
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,928
hot IRF7240TRPBF
Infineon Technologies

MOSFET P-CH 40V 10.5A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存52,464
AUIRF540Z
Infineon Technologies

MOSFET N-CH 100V 36A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存21,060
BSC100N10NSFGATMA1
Infineon Technologies

MOSFET N-CH 100V 90A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存2,944
IPD320N20N3GATMA1
Infineon Technologies

MOSFET N-CH 200V 34A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存54,792
BC848AE6327HTSA1
Infineon Technologies

TRANS NPN 30V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,664
BF776H6327XTSA1
Infineon Technologies

TRANS RF NPN 1.8GHZ 4.0V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 46GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 24dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存97,206
BA89502VH6327XTSA1
Infineon Technologies

DIODE GEN PURP SC79-2

  • Diode Type: -
  • Voltage - Peak Reverse (Max): -
  • Current - Max: -
  • Capacitance @ Vr, F: -
  • Resistance @ If, F: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,792
SAK-XE164GM-48F80L AA
Infineon Technologies

IC MCU 16BIT 384KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 34K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 11x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
封装: 100-LQFP Exposed Pad
库存7,280
XC2734X40F80LAAKXUMA1
Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 38
  • Program Memory Size: 320KB (320K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 34K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 9x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-64-6
封装: 64-LQFP Exposed Pad
库存5,072
ADM5120PX-AB-R-2
Infineon Technologies

IC PROCESSOR NTWRK SOC 208-LQFP

  • Applications: Network Processor
  • Core Processor: 4Kc
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: 16K x 8
  • Interface: Ethernet, UART, USB
  • Number of I/O: -
  • Voltage - Supply: 1.8V, 3.3V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 208-LQFP
  • Supplier Device Package: PG-LQFP-208
封装: 208-LQFP
库存6,160
TLE9877QXA40XUMA1
Infineon Technologies

IC MOTOR DRIVER 48VQFN

  • Applications: Automotive
  • Core Processor: ARM? Cortex?-M3
  • Program Memory Type: FLASH (64 kB)
  • Controller Series: -
  • RAM Size: 6K x 8
  • Interface: LIN, SSI, UART
  • Number of I/O: 10
  • Voltage - Supply: 5.5 V ~ 28 V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: VQFN-48-31
封装: 48-VFQFN Exposed Pad
库存2,560
IR3570AMGB01TRP
Infineon Technologies

IC REGULATOR PG-VQFN-40-901

  • Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-VQFN (5x5)
封装: 40-VFQFN Exposed Pad
库存3,056
BSP742RINT
Infineon Technologies

IC HIGH SIDE SWITCH SMART 8DSO

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,712
TLE94613ESV33XUMA1
Infineon Technologies

IC TXRX CAN LITE SBC 2MBPS

  • Type: System Basis Chip (SBC)
  • Applications: CAN Automotive
  • Mounting Type: Surface Mount
  • Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-24-1
封装: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
库存21,660
BSM300GA120DN2S2HDLA1
Infineon Technologies

POWER MODULE IGBT 1200V AG-62MM

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CY8C4149AZES555XQLA1
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
Request a Quote
CY95F636HNPMC-G-UNERE2
Infineon Technologies

IC MM MCU 32LQFP

  • Core Processor: F²MC-8FX
  • Core Size: 8-Bit
  • Speed: 16.25MHz
  • Connectivity: I2C, LINbus, SIO, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 28
  • Program Memory Size: 36KB (36K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1K x 8
  • Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
  • Data Converters: A/D 8x8/10b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LQFP
  • Supplier Device Package: 32-LQFP (7x7)
封装: -
库存4,500
S29GL512N10TFI010
Infineon Technologies

IC FLASH 512MBIT PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封装: -
Request a Quote
FZ1200R17HP4HOSA2
Infineon Technologies

IGBT MOD 1700V 1200A 7800W

  • IGBT Type: Trench
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1200 A
  • Power - Max: 7800 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存6
CYT2B94BACQ0AZEGST
Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 80LQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 63
  • Program Memory Size: 2.0625MB (2.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 256K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 52x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-LQFP (12x12)
封装: -
Request a Quote
IM323M6G2XKMA1
Infineon Technologies

CIPOS TINY

  • Type: IGBT
  • Configuration: 3 Phase Inverter
  • Current: 10 A
  • Voltage: 600 V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
封装: -
Request a Quote
CYT3BB5CEBQ0AEEGS
Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 100QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 250MHz
  • Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 72
  • Program Memory Size: 4.0625MB (4.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256K x 8
  • RAM Size: 768K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 55x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: 100-TEQFP (14x14)
封装: -
库存2,700
IPP040N08NF2SAKMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
库存2,442
DF16MR12W1M1HFB67BPSA1
Infineon Technologies

MOSFET 2N-CH 1200V 25A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存72
S99FL128SAGNFI000
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
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