Infineon Technologies 产品

IKU15N60RBKMA1

Infineon Technologies

IGBT 600V 30A 250W TO251-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 900µJ
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 16ns/183ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: PG-TO251-3

封装: TO-251-3 Short Leads, IPak, TO-251AA

IRGSL30B60KPBF

Infineon Technologies

IGBT 600V 78A 370W TO262

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
• Power - Max: 370W
• Switching Energy: 350µJ (on), 825µJ (off)
• Input Type: Standard
• Gate Charge: 102nC
• Td (on/off) @ 25°C: 46ns/185ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF6645

Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SJ

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? SJ
• Package / Case: DirectFET? Isometric SJ

封装: DirectFET? Isometric SJ

BSC200P03LSGAUMA1

Infineon Technologies

MOSFET P-CH 30V 12.5A TDSON-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 48.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IRF1010ZL

Infineon Technologies

MOSFET N-CH 55V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFZ34NS

Infineon Technologies

MOSFET N-CH 55V 29A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD046N08N5ATMA1

Infineon Technologies

MOSFET N-CH TO-252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 65µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP60R250CPXKSA1

Infineon Technologies

MOSFET N-CH 650V 12A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

BDP948E6433HTMA1

Infineon Technologies

TRANS PNP 45V 3A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

TLE4470G

Infineon Technologies

IC REG LINEAR POS ADJ 20DSO

• Output Configuration: Positive
• Output Type: Adjustable (Fixed)
• Number of Regulators: 2
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V, (5V), Tracking
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
• Current - Output: 180mA, 350mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 500µA ~ 15mA
• PSRR: 60dB (20Hz ~ 20kHz)
• Control Features: Enable, Reset
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-20

封装: 20-SOIC (0.295", 7.50mm Width)

IR21064

Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 14-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: 14-DIP

封装: 14-DIP (0.300", 7.62mm)

2EDL05N06PJXUMA1

Infineon Technologies

IC DRIVER GATE HALF BRIDGE 14DSO

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 25 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 48ns, 24ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-DSO

封装: 14-SOIC (0.154", 3.90mm Width)

SAK-XC2287-56F66L AC

Infineon Technologies

IC MCU 16BIT 448KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: DMA, I2S, POR, PWM, WDT
• Number of I/O: 118
• Program Memory Size: 448KB (448K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

封装: 144-LQFP Exposed Pad

SAF-XC878CM-13FFI 3V3 AA

Infineon Technologies

IC MCU 8BIT 52KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: CAN, SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 52KB (52K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

TC1782F320F180HRBAKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 176LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 180MHz
• Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 86
• Program Memory Size: 2.5MB (2.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 176K x 8
• Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
• Data Converters: A/D 8x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: PG-LQFP-176-20

封装: 176-LQFP

XC2224L20F66VAAKXUMA1

Infineon Technologies

IC MCU 16BIT 160KB FLASH 48VQFN

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 66MHz
• Connectivity: CAN, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 33
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 10K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-VQFN (7x7)

封装: 48-VFQFN Exposed Pad

TLE49461LHALA1

Infineon Technologies

MAGNETIC SWITCH LATCH SSO-3

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 19mT Trip, -19mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.7 V ~ 18 V
• Current - Supply (Max): 6mA
• Current - Output (Max): 20mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 3-SIP, SSO-3-02
• Supplier Device Package: PG-SSO-3-2

封装: 3-SIP, SSO-3-02

IR3563BMMS02TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IGC10T65U8QX7SA1

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

T1190N18TOFVTXPSA1

Infineon Technologies

SCR MODULE 1800V 2800A DO200AC

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 1190 A
• Current - On State (It (RMS)) (Max): 2800 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 25500A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC

封装: -

Request a Quote

TD92N1420KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 160A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 104 A
• Current - On State (It (RMS)) (Max): 160 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 120 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 130°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

Request a Quote

IKWH40N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
• Power - Max: 208 W
• Switching Energy: 0.97mJ (on), 0.42mJ (off)
• Input Type: Standard
• Gate Charge: 81 nC
• Td (on/off) @ 25°C: 18ns/141ns
• Test Condition: 400V, 40A, 12.5Ohm, 15V
• Reverse Recovery Time (trr): 74 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-32

封装: -

BSM400GA170DLS

Infineon Technologies

IGBT MODULE

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 800 A
• Power - Max: 3120 W
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

Request a Quote

BB669E7904

Infineon Technologies

VARIABLE CAPACITANCE DIODE

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 20.9
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30 V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2-1

封装: -

Request a Quote

2EDF9275FXUMA1

Infineon Technologies

IC IGBT DVR

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, SiC MOSFET
• Voltage - Supply: 20V
• Logic Voltage - VIL, VIH: -, 1.65V
• Current - Peak Output (Source, Sink): 4A, 8A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 6.5ns, 4.5ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-16-11

封装: -

MB3775PF-G-BND-JNE1

Infineon Technologies

IC POWER SUPPLY MONITOR 16SOP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

SPP15P10PLHXKSA1

Infineon Technologies

MOSFET P-CH 100V 15A TO220-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1.54mA
• Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 128W (Tc)
• Rds On (Max) @ Id, Vgs: 200mOhm @ 11.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封装: -

Request a Quote

FF1800R17IP5PBPSA1

Infineon Technologies

IGBT MODULE 1700V 3600A

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 1800 A
• Power - Max: 1800000 W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

IAUCN04S7N009ATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 175A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-34
• Package / Case: 8-PowerTDFN

封装: -

CY15B204QN-40SXET

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 40 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 9 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: -

Request a Quote