页 499 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
SKB02N120ATMA1	Infineon Technologies	IGBT 1200V 6.2A 62W TO263-3-2 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6.2A Current - Collector Pulsed (Icm): 9.6A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Power - Max: 62W Switching Energy: 220µJ Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 23ns/260ns Test Condition: 800V, 2A, 91 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,968
IRF6644	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-MN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	封装: DirectFET? Isometric MN	库存61,140
SPB80N03S2-03	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存37,308
IPI11N03LA	Infineon Technologies	MOSFET N-CH 25V 30A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存5,648
IRFZ48ZL	Infineon Technologies	MOSFET N-CH 55V 61A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存2,224
IRF2804STRL	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,368
IPD30N08S222ATMA1	Infineon Technologies	MOSFET N-CH 75V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,096
IPD60R460CEATMA1	Infineon Technologies	MOSFET N-CH 600V TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,072
IRFB23N15DPBF	Infineon Technologies	MOSFET N-CH 150V 23A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存5,312
BCP5316H6327XTSA1	Infineon Technologies	TRANS PNP 80V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封装: TO-261-4, TO-261AA	库存3,152
BCR 191T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封装: SC-75, SOT-416	库存7,344
IRAMY20UP60B	Infineon Technologies	IC PWR HYBRID 600V 20A SIP3 Type: IGBT Configuration: 3 Phase Current: 20A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads	封装: 22-PowerSIP Module, 18 Leads, Formed Leads	库存17,472
BAT 64-05 B5003	Infineon Technologies	DIODE ARRAY SCHOTTKY 40V SOT23 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存2,256
BAT 15-098LRH E6327	Infineon Technologies	DIODE ARRAY SCHOTTKY 4V TSLP4 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io) (per Diode): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: 4-XFDFN Supplier Device Package: PG-TSLP-4	封装: 4-XFDFN	库存2,752
TC1793F512F270EFABKXUMA2	Infineon Technologies	IC MCU 32BIT 4MB FLASH 416BGA Core Processor: TriCore? Core Size: 32-Bit Speed: 270MHz Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC Peripherals: DMA, POR, WDT Number of I/O: 221 Program Memory Size: 4MB (4M x 8) Program Memory Type: FLASH EEPROM Size: 192K x 8 RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V Data Converters: A/D 8x10b, 44x12b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 416-BGA Supplier Device Package: PG-BGA-416	封装: 416-BGA	库存3,088
KTY11-6	Infineon Technologies	IC TEMPERATURE SENSOR TO-92MINI Resistance in Ohms @ 25°C: 2k Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Power - Max: - Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Supplier Device Package: TO-92MINI	封装: TO-226-2, TO-92-2 (TO-226AC)	库存8,874
CHL8325A-42CRT	Infineon Technologies	IC REG BUCK 40VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存2,768
FF50R12RT4HOSA1	Infineon Technologies	IGBT MOD 1200V 50A 285W IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 285 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
CY9AFB41LAPMC1-G-JNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 51 Program Memory Size: 96KB (96K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 12x12b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: -	Request a Quote
PBL387821QSD	Infineon Technologies	FLEXISLIC SLIC Function: - Interface: - Number of Circuits: - Voltage - Supply: - Current - Supply: - Power (Watts): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
S6E2H14G0AGV2000M	Infineon Technologies	IC MCU 32BIT 288KB FLASH 120LQFP Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 160MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 100 Program Memory Size: 288KB (288K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 24x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 120-LQFP Supplier Device Package: 120-LQFP (16x16)	封装: -	Request a Quote
CY15B104QN-50LPXIT	Infineon Technologies	IC FRAM 4MBIT SPI 50MHZ 8GQFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UQFN Supplier Device Package: 8-GQFN (3.23x3.28)	封装: -	Request a Quote
CY8C4747LQS-S453	Infineon Technologies	IC MCU 32BIT 128KB FLASH 40QFN Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封装: -	库存7,350
DF23MR12W1M1B11BOMA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	封装: -	Request a Quote
IRFHM830DTR2PBF	Infineon Technologies	MOSFET N-CH 30V 20A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-VQFN Exposed Pad	封装: -	Request a Quote
IS26KS512S-DPBLA300-TR	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
IAUS300N08S5N012TATMA1	Infineon Technologies	MOSFET N-CH 80V 300A HDSOP-16-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	封装: -	Request a Quote
CY7C1361KVE33-100AXE	Infineon Technologies	SYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, Standard Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 6.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: -	Request a Quote
CY9AF114MAPMC-G-MNE2	Infineon Technologies	IC MM MCU 80LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 12x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封装: -	库存3,570
CY8C6347BZI-BLD54	Infineon Technologies	IC MCU 32BIT 1MB FLASH 124BGA Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, WDT Number of I/O: 84 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2, 1x12b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 124-VFBGA Supplier Device Package: 124-VFBGA (9x9)	封装: -	库存7,773

SKB02N120ATMA1

Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3-2

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 6.2A
Current - Collector Pulsed (Icm): 9.6A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Power - Max: 62W
Switching Energy: 220µJ
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 23ns/260ns
Test Condition: 800V, 2A, 91 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,968

IRF6644

Infineon Technologies

MOSFET N-CH 100V DIRECTFET-MN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MN
Package / Case: DirectFET? Isometric MN

封装: DirectFET? Isometric MN

库存61,140

SPB80N03S2-03

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存37,308

IPI11N03LA

Infineon Technologies

MOSFET N-CH 25V 30A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,648

IRFZ48ZL

Infineon Technologies

MOSFET N-CH 55V 61A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,224

IRF2804STRL

Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,368

IPD30N08S222ATMA1

Infineon Technologies

MOSFET N-CH 75V 30A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,096

IPD60R460CEATMA1

Infineon Technologies

MOSFET N-CH 600V TO-252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,072

IRFB23N15DPBF

Infineon Technologies

MOSFET N-CH 150V 23A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存5,312

BCP5316H6327XTSA1

Infineon Technologies

TRANS PNP 80V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

库存3,152

BCR 191T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

库存7,344

IRAMY20UP60B

Infineon Technologies

IC PWR HYBRID 600V 20A SIP3

Type: IGBT
Configuration: 3 Phase
Current: 20A
Voltage: 600V
Voltage - Isolation: 2000Vrms
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads

封装: 22-PowerSIP Module, 18 Leads, Formed Leads

库存17,472

BAT 64-05 B5003

Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT23

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 120mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存2,256

BAT 15-098LRH E6327

Infineon Technologies

DIODE ARRAY SCHOTTKY 4V TSLP4

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io) (per Diode): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN
Supplier Device Package: PG-TSLP-4

封装: 4-XFDFN

库存2,752

TC1793F512F270EFABKXUMA2

Infineon Technologies

IC MCU 32BIT 4MB FLASH 416BGA

Core Processor: TriCore?
Core Size: 32-Bit
Speed: 270MHz
Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Number of I/O: 221
Program Memory Size: 4MB (4M x 8)
Program Memory Type: FLASH
EEPROM Size: 192K x 8
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
Data Converters: A/D 8x10b, 44x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 416-BGA
Supplier Device Package: PG-BGA-416

封装: 416-BGA

库存3,088

KTY11-6

Infineon Technologies

IC TEMPERATURE SENSOR TO-92MINI

Resistance in Ohms @ 25°C: 2k
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Power - Max: -
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Supplier Device Package: TO-92MINI

封装: TO-226-2, TO-92-2 (TO-226AC)

库存8,874

CHL8325A-42CRT

Infineon Technologies

IC REG BUCK 40VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,768

FF50R12RT4HOSA1

Infineon Technologies

IGBT MOD 1200V 50A 285W

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 285 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

Request a Quote

CY9AFB41LAPMC1-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 51
Program Memory Size: 96KB (96K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 12x12b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: -

Request a Quote

PBL387821QSD

Infineon Technologies

FLEXISLIC SLIC

Function: -
Interface: -
Number of Circuits: -
Voltage - Supply: -
Current - Supply: -
Power (Watts): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

S6E2H14G0AGV2000M

Infineon Technologies

IC MCU 32BIT 288KB FLASH 120LQFP

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 160MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 100
Program Memory Size: 288KB (288K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 24x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Supplier Device Package: 120-LQFP (16x16)

封装: -

Request a Quote

CY15B104QN-50LPXIT

Infineon Technologies

IC FRAM 4MBIT SPI 50MHZ 8GQFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Supplier Device Package: 8-GQFN (3.23x3.28)

封装: -

Request a Quote

CY8C4747LQS-S453

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封装: -

库存7,350

DF23MR12W1M1B11BOMA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

封装: -

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IRFHM830DTR2PBF

Infineon Technologies

MOSFET N-CH 30V 20A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (3x3)
Package / Case: 8-VQFN Exposed Pad

封装: -

Request a Quote

IS26KS512S-DPBLA300-TR

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

IAUS300N08S5N012TATMA1

Infineon Technologies

MOSFET N-CH 80V 300A HDSOP-16-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

封装: -

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CY7C1361KVE33-100AXE

Infineon Technologies

SYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, Standard
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: -

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CY9AF114MAPMC-G-MNE2

Infineon Technologies

IC MM MCU 80LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 12x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封装: -

库存3,570

CY8C6347BZI-BLD54

Infineon Technologies

IC MCU 32BIT 1MB FLASH 124BGA

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, WDT
Number of I/O: 84
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2, 1x12b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Supplier Device Package: 124-VFBGA (9x9)

封装: -

库存7,773