Infineon Technologies 产品

IRF7809PBF

Infineon Technologies

MOSFET N-CH 28V 14.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 28V
• Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRF7834PBF

Infineon Technologies

MOSFET N-CH 30V 19A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFZ24NSTRL

Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL3302S

Infineon Technologies

MOSFET N-CH 20V 39A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPA11N80C3XKSA2

Infineon Technologies

MOSFET N-CH 800V 11A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 680µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3 Isolated Tab

封装: TO-220-3 Isolated Tab

IRF1404ZSPBF

Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLS4030-7PPBF

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IRL1404ZSTRLPBF

Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BC 807-25 E6327

Infineon Technologies

TRANS PNP 45V 0.5A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

TLE4299GNTMA1

Infineon Technologies

IC REG LINEAR 5V 150MA 8DSO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 105µA ~ 2mA
• PSRR: 66dB (100Hz)
• Control Features: Reset
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

TLE4254EJAXUMA1

Infineon Technologies

IC REG LINEAR POS ADJ 70MA 8DSO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): Tracking
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 70mA
• Current - Output: 70mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA ~ 15mA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-8, e-Pad

封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

BTS500801TMAATMA1

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 38 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 9.5A
• Rds On (Typ): 7 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO220-7

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

IFX1050G

Infineon Technologies

IC TXRX CAN 5V HS 8DSO

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: 150mV
• Data Rate: 1MBd
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

TDA6192TDRYPACKFUMA1

Infineon Technologies

IC AMP IF 5V GAIN CTRL TSSOP-16

• Frequency: 30MHz ~ 65MHz
• P1dB: -
• Gain: -
• Noise Figure: -
• RF Type: General Purpose
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

封装: 16-TSSOP (0.173", 4.40mm Width)

ASP1107-A42T

Infineon Technologies

IC REGULATOR PG-VQFN-56-900

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BTS5014SDAAUMA1

Infineon Technologies

IC PWR SW SMART HISIDE TO252-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 20 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 6A
• Rds On (Typ): 14 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5-11

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

CHL8318-20-04CRT

Infineon Technologies

IC REG BUCK 56VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CYPM132197BZXIXQMA1

Infineon Technologies

POWER DELIVERY MICROCONTROLLER

• Applications: USB Power Delivery (PD) Controller
• Core Processor: ARM® Cortex®-M0+
• Program Memory Type: FLASH (256kB)
• Controller Series: -
• RAM Size: 32K x 8
• Interface: GPIO, I2C, SPI, UART, USB Type C
• Number of I/O: 50
• Voltage - Supply: 2.8V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 97-VFBGA
• Supplier Device Package: 97-BGA (6x6)

封装: -

CY62187G30-55BAXI

Infineon Technologies

IC SRAM 64MBIT PARALLEL 48FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LFBGA
• Supplier Device Package: 48-FBGA (8x9.5)

封装: -

CY8C4247AZQ-M485T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
• Number of I/O: 51
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR; D/A 2x7b, 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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TT250N12KOFKHPSA1

Infineon Technologies

SCR MODULE 1800V 410A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 250 A
• Current - On State (It (RMS)) (Max): 410 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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PEB3320HLV1-4

Infineon Technologies

VINETIC VOICE AND INTERNET ENHAN

• Type: -
• Data Interface: -
• Resolution (Bits): -
• Number of ADCs / DACs: -
• Sigma Delta: -
• S/N Ratio, ADCs / DACs (db) Typ: -
• Dynamic Range, ADCs / DACs (db) Typ: -
• Voltage - Supply, Analog: -
• Voltage - Supply, Digital: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IPW65R190CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 17.5A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

封装: -

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CY27410LTXI-021T

Infineon Technologies

INFINEON

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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AUXHKGP4062D-E

Infineon Technologies

IC DISCRETE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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FF650R17IE4VBOSA1

Infineon Technologies

IGBT MODULE 1700V 4150W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): -
• Power - Max: 4150 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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TLE9180D21QKXUMA1

Infineon Technologies

DRIVER_IC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 5.5V ~ 60V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 1A, 1A
• Input Type: TTL
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-27

封装: -

BTG70013A1ESWXUMA1

Infineon Technologies

PROFET

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 4.1V ~ 28V
• Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
• Current - Output (Max): 26.6A
• Rds On (Typ): 1.5mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24-32

封装: -

IPW65R041CFDFKSA2

Infineon Technologies

MOSFET N-CH 650V 68.5A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 3.3mA
• Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: -

CG8866AFT

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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