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Infineon Technologies |
MOSFET N-CH 100V 18A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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封装: 8-PowerVDFN |
库存7,600 |
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Infineon Technologies |
MOSFET N-CH 60V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,880 |
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Infineon Technologies |
MOSFET N-CH 100V SAWN BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.1V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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封装: Die |
库存2,768 |
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Infineon Technologies |
MOSFET N-CH TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 66µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存8,820 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存16,560 |
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Infineon Technologies |
MOSFET N-CH 100V 58A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存16,656 |
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Infineon Technologies |
MOSFET 2N-CH 30V 3.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,248 |
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Infineon Technologies |
TRANS 2PNP PREBIAS 0.25W SOT363
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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封装: 6-VSSOP, SC-88, SOT-363 |
库存4,848 |
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Infineon Technologies |
IC REG LINEAR 2.5V 1A 8SOIC
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 12V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.65V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 3mA ~ 50mA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,032 |
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Infineon Technologies |
IC SWITCH CTRLR 10/100 40LQFP
- Protocol: Ethernet
- Function: Controller
- Interface: Parallel
- Standards: 10/100 Base-T PHY
- Voltage - Supply: 3.135 V ~ 3.465 V
- Current - Supply: -
- Operating Temperature: 0°C ~ 115°C
- Package / Case: 48-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-48-1
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封装: 48-LQFP Exposed Pad |
库存7,008 |
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Infineon Technologies |
IC MCU 8BIT 64KB FLASH 48VQFN
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 27MHz
- Connectivity: LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-VQFN (7x7)
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封装: 48-VFQFN Exposed Pad |
库存3,520 |
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Infineon Technologies |
IC MCU 32BIT 320KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 66MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存7,152 |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 24VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 18
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 13x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 24-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-24-19
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封装: 24-VFQFN Exposed Pad |
库存7,424 |
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Infineon Technologies |
IC MCU 8BIT 2KB FLASH 16TSSOP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: I2C, SSC, UART/USART
- Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
- Number of I/O: 13
- Program Memory Size: 2KB (2K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 512 x 8
- Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存7,504 |
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Infineon Technologies |
OPTOISO 3.75KV 2CH PHVOLT 8-SMT
- Number of Channels: 2
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 5ms, 250µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 8V
- Current - Output / Channel: 1µA
- Voltage - Forward (Vf) (Typ): -
- Current - DC Forward (If) (Max): -
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD (300 mil)
- Supplier Device Package: 8-SMD
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封装: 8-SMD (300 mil) |
库存8,766 |
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Infineon Technologies |
EMBEDDED POWER
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: LINbus, SSC, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
- Number of I/O: 10
- Program Memory Size: 96KB (96K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 4K x 8
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
- Data Converters: A/D 9x8b, 12x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
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封装: 48-VFQFN Exposed Pad |
库存22,122 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
OPTIREG SYST BASIS CHIPS
- Applications: System Basis Chip
- Current - Supply: 5mA
- Voltage - Supply: 4.5V ~ 28V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
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封装: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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封装: - |
库存2,940 |
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Infineon Technologies |
DIODE ARR SCHOTT 40V 120MA SOT23
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 120mA
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 30 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-3
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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封装: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 100A 515W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 515 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: - |
库存30 |
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Infineon Technologies |
IC MCU 32BIT 544KB FLASH 112BGA
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit Single-Core
- Speed: 144MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 83
- Program Memory Size: 544KB (544K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 112-LFBGA
- Supplier Device Package: 112-PFBGA (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 64MBIT PARALLEL 48VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (8.15x6.15)
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 2.0625MB FLSH 144QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 122
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 72x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (20x20)
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封装: - |
库存1,587 |
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Infineon Technologies |
IGBT TRENCH FS 650V 77A HSIP247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 77 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 138 W
- Switching Energy: 1.23mJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 20ns/127ns
- Test Condition: 400V, 50A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): 77 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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封装: - |
库存15 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 64TQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
THYR / DIODE MODULE DK
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
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封装: - |
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