页 243 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  243/567
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hot IRF7805ZGTRPBF
Infineon Technologies

MOSFET N-CH 30V 16A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存402,024
IPI530N15N3GXKSA1
Infineon Technologies

MOSFET N-CH 150V 21A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,728
BSC026N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 23A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存6,784
IRF540NLPBF
Infineon Technologies

MOSFET N-CH 100V 33A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存19,998
PTFA191001EV4XWSA1
Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 44dBm
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
封装: 2-Flatpack, Fin Leads
库存6,048
BF999E6327HTSA1
Infineon Technologies

MOSFET N-CH RF 20V 30MA SOT-23

  • Transistor Type: N-Channel
  • Frequency: 45MHz
  • Gain: 27dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 2.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,168
hot IRF7304TR
Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存430,128
BCR169E6327HTSA1
Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存2,560
BFS 360L6 E6327
Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
封装: 6-XFDFN
库存6,640
BFP405H6740XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存7,600
BAT6302VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 3V 100MA SC79

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 3V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
封装: SC-79, SOD-523
库存26,034
IR35211MTRPBF
Infineon Technologies

IC CTRLR PWM MULTIPHASE

  • Applications: Multiphase Controller
  • Current - Supply: 105mA
  • Voltage - Supply: 2.9 V ~ 3.63 V
  • Operating Temperature: 0°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
封装: 40-VFQFN Exposed Pad
库存6,112
IRS26320JTRPBF
Infineon Technologies

IC GATE DRVR HALF-BRIDGE 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 44-PLCC
封装: -
库存4,288
AUIR2085S
Infineon Technologies

IC DVR HALF-BRDG SELF OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,752
XC87816FFI5VACFXUMA1
Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 27MHz
  • Connectivity: SPI, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 40
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 3.25K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
封装: 64-LQFP
库存5,584
IRS2053MPBF
Infineon Technologies

IC DGTL AMP AUD 3CH 200V 48MLPQ

  • Function: Line Driver
  • Applications: Pre-Amplifier
  • Number of Channels: 3
  • Interface: Analog
  • Voltage - Supply: 10 V ~ 15 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Specifications: Class D
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-MLPQ (7x7)
封装: 48-VFQFN Exposed Pad
库存5,296
BGM15LA12E6327XTSA1
Infineon Technologies

IC AMP MMIC 12ATSLP

  • Frequency: 700MHz ~ 1GHz
  • P1dB: -11dBm
  • Gain: 17.5dB
  • Noise Figure: 1.1dB
  • RF Type: LTE, W-CDMA
  • Voltage - Supply: 2.2 V ~ 3.3 V
  • Current - Supply: 4.9mA
  • Test Frequency: -
  • Package / Case: 12-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-12-3
封装: 12-UFQFN Exposed Pad
库存37,560
46DN06B02ELEMPRXPSA1
Infineon Technologies

DIODE GP 600V 7740A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 7740A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封装: -
Request a Quote
IPD60R520C6BTMA1
Infineon Technologies

MOSFET N-CH 600V 8.1A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
CY8C4145PVI-PS431
Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 20
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
封装: -
Request a Quote
CYT2B78CADR0AZSGST
Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 176QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 152
  • Program Memory Size: 1.0625MB (1.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 96K x 8
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 82x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-LQFP (24x24)
封装: -
Request a Quote
ETD630N16P60TIMHPSA1
Infineon Technologies

THYR / DIODE MODULE DK

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 635 A
  • Current - On State (It (RMS)) (Max): 700 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: 135°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
Request a Quote
IPA65R190CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-111
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
S99VS064RABBHI013
Infineon Technologies

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
PEB2047-1BNMTSL
Infineon Technologies

IC MEMORY 44PLCC

  • Type: Memory
  • Applications: -
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: 44-PLCC (16.6x16.6)
封装: -
Request a Quote
F505CALMCAXP
Infineon Technologies

IC MCU 8BIT ROMLESS 44MQFP

  • Core Processor: C500
  • Core Size: 8-Bit
  • Speed: 20MHz
  • Connectivity: CANbus, EBI/EMI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 1.25K x 8
  • Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
  • Data Converters: A/D 8x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-QFP
  • Supplier Device Package: PG-MQFP-44-2
封装: -
Request a Quote
CY8C4149LDAS553XQLA1
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 40
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (7x7)
封装: -
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CY8C4245PVS-482ZT
Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 24
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 8x12b SAR; D/A 2x7/8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
封装: -
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CY8C4147LQA-S293
Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 34
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
封装: -
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IPT60R125CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 21A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封装: -
库存6,000