Infineon Technologies 产品

IRF8252PBF

Infineon Technologies

MOSFET N-CH 25V 25A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFZ46ZL

Infineon Technologies

MOSFET N-CH 55V 51A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 82W (Tc)
• Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR13N15DTR

Infineon Technologies

MOSFET N-CH 150V 14A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFS4115-7TRL

Infineon Technologies

MOSFET N-CH 150V 105A AUTO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

IRF5851TR

Infineon Technologies

MOSFET N/P-CH 20V 6-TSOP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

IRF9952TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BC818K16WE6327HTSA1

Infineon Technologies

TRANS NPN 25V 0.5A SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

BFP 420F E6327

Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
• Gain: 19.5dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

封装: 4-SMD, Flat Leads

BAL99E6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 70V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3
• Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

BAS16SH6327XTSA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT363

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

IR3564AMTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (5x5)

封装: 40-VFQFN Exposed Pad

IR21592PBF

Infineon Technologies

IC CTLR BALLAST DIMMING 16-DIP

• Type: Ballast Controller
• Frequency: 18kHz ~ 95kHz
• Voltage - Supply: 12 V ~ 16.5 V
• Current - Supply: 10mA
• Current - Output Source/Sink: -
• Dimming: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

封装: 16-DIP (0.300", 7.62mm)

IR44272LTRPBF

Infineon Technologies

IC GATE DRVR LOW SIDE SOT23-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 5 V ~ 18 V
• Logic Voltage - VIL, VIH: 0.6V, 2.7V
• Current - Peak Output (Source, Sink): 1.5A, 1.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 10ns, 10ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

封装: SC-74A, SOT-753

V23818-K305-L57

Infineon Technologies

TXRX ETHRNET MULT-MODE 1.25GBIT

• Data Rate: 1.25Gbps
• Wavelength: 850nm
• Applications: Ethernet
• Voltage - Supply: 3.1 V ~ 3.5 V
• Connector Type: LC Duplex
• Mounting Type: Through Hole

封装: -

ESD307U102NE6327XTSA1

Infineon Technologies

TVS DIODE 10VWM 29VC PG-TSNP-2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V (Max)
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 29V
• Current - Peak Pulse (10/1000µs): 34A (8/20µs)
• Power - Peak Pulse: 800W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 270pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: TSNP-2-2

封装: 2-XDFN

PMA7105XUMA1

Infineon Technologies

IC MCU/TX/ADC/LF RCVR 38-TSSOP

• Frequency: 315MHz, 434MHz, 868MHz, 915MHz
• Applications: Remote Control, Remote Metering
• Modulation or Protocol: ASK, FSK
• Data Rate (Max): 20 kbps
• Power - Output: 10dBm
• Current - Transmitting: 17.1mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
• Features: -
• Voltage - Supply: 1.9 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)

封装: 38-TFSOP (0.173", 4.40mm Width)

BGS16GA14E6327XTSA1

Infineon Technologies

CMOS SWITCH

• Frequency - Lower: 100MHz
• Frequency - Upper: 3.8GHz
• Isolation @ Frequency: 33dB @ 3GHz (typ)
• Insertion Loss @ Frequency: 0.5dB @ 3GHz
• IIP3: -
• Topology: -
• Circuit: SP6T
• P1dB: -
• Features: -
• Impedance: -
• Operating Temperature: -30°C ~ 85°C
• Voltage - Supply: 3V
• RF Type: LTE, W-CDMA
• Package / Case: -
• Supplier Device Package: -

封装: -

PVA2352NPBF

Infineon Technologies

IC RELAY PHOTOVO 200V 150MA 8DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 24 Ohm
• Load Current: 150mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 200 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
• Supplier Device Package: 8-DIP Modified
• Relay Type: Relay

封装: 8-DIP (0.300", 7.62mm), 4 Leads

ICE5AR4780BZSXKLA1

Infineon Technologies

100KHZ OFFLINE 800V 4.7 DIP-7

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm), 7 Leads

TLE8102SGXT

Infineon Technologies

IC SWITCH LOSIDE 2CH DSO-12

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CHL8104-09CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

99326-E1270

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IPT009N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 220µA
• Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8
• Package / Case: 8-PowerSFN

封装: -

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S6J3428FVBSV20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 74K x 8
• Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
• Data Converters: A/D 35x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封装: -

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IKB30N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 55A TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 55 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 188 W
• Switching Energy: 870µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 70 nC
• Td (on/off) @ 25°C: 24ns/159ns
• Test Condition: 400V, 30A, 22Ohm, 15V
• Reverse Recovery Time (trr): 75 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

封装: -

IPB60R180P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 18A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 72W (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

IPA028N04NM3SXKSA1

Infineon Technologies

TRENCH <= 40V PG-TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 95µA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封装: -

IRFB3077PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-904
• Package / Case: TO-220-3

封装: -

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IPP65R190CFD7AAKSA1

Infineon Technologies

MOSFET N-CH 650V 14A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 77W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封装: -

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S29GL064S90TFI033

Infineon Technologies

IC FLASH 64MBIT PARALLEL 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: -

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