页 208 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG4RC10KPBF	Infineon Technologies	IGBT 600V 9A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,872
IRGP35B60PDPBF	Infineon Technologies	IGBT 600V 60A 308W TO247AC IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A Power - Max: 308W Switching Energy: 220µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 26ns/110ns Test Condition: 390V, 22A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封装: TO-247-3	库存170,688
IRLR9343-701PBF	Infineon Technologies	MOSFET P-CH 55V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,216
IRF6215L-103PBF	Infineon Technologies	MOSFET P-CH 150V 13A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存2,192
IRFI2807	Infineon Technologies	MOSFET N-CH 75V 40A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存5,824
IRF7321D2	Infineon Technologies	MOSFET P-CH 30V 4.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,032
IRFP044N	Infineon Technologies	MOSFET N-CH 55V 53A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: TO-247-3	库存19,284
SPA12N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 11.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存5,760
IRFP250MPBF	Infineon Technologies	MOSFET N-CH 200V 30A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: TO-247-3	库存96,792
IPB80N06S2L06ATMA2	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,992
BCR10PNH6327XTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存140,508
BBY5103WE6327HTSA1	Infineon Technologies	DIODE TUNING 7V 20MA SOD-323 Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz Capacitance Ratio: 2.2 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 7V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2	封装: SC-76, SOD-323	库存2,448
HFA15PB60PBF	Infineon Technologies	DIODE GEN PURP 600V 15A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-247-2	库存136,920
BAW 56W H6327	Infineon Technologies	DIODE ARRAY GP 80V 200MA SOT323 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封装: SC-70, SOT-323	库存5,952
TLS202B1MBV50HTSA1	Infineon Technologies	LINEAR VOLTAGE REGULATOR Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 18V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.57V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 50µA PSRR: 63dB (10kHz) Control Features: Current Limit, Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,464
IP2034TRPBF	Infineon Technologies	IC REG BUCK ADJ 40A SYNC LGA Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 13.2V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 3.3V Current - Output: 40A Frequency - Switching: 300kHz ~ 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: Power Block (LGA) Supplier Device Package: -	封装: Power Block (LGA)	库存157,080
BTS50090-1TMB	Infineon Technologies	IC SWITCH PWR HISIDE TO220-7 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5.5 V ~ 38 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Rds On (Typ): 8 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-220-7 Supplier Device Package: PG-TO220-7	封装: TO-220-7	库存5,472
IPS1011RTRRPBF	Infineon Technologies	IC SWITCH IPS 1CH LOW SIDE DPAK Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Rds On (Typ): 10 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Fixed), Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,136
BTS500601TEAAUMA2	Infineon Technologies	IC PWR SW HI-SIDE 1CH TO252-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 6 V ~ 19 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16.5A Rds On (Typ): 6.8 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-11	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存4,048
ICE3B5565I	Infineon Technologies	IC OFFLINE CTRLR SMPS OTP TO220 Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback Voltage - Start Up: 15V Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V Duty Cycle: 72% Frequency - Switching: 67kHz Power (Watts): 240W Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Control Features: Soft Start Operating Temperature: -25°C ~ 130°C (TJ) Package / Case: TO-220-6 Formed Leads Supplier Device Package: PG-TO220-6 Mounting Type: Through Hole	封装: TO-220-6 Formed Leads	库存6,352
KT130	Infineon Technologies	IC TEMPERATURE SENSOR SOT-23 Resistance in Ohms @ 25°C: 1k Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Power - Max: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存1,658,100
TLE4976-1H	Infineon Technologies	MAGNETIC SWITCH UNIPOLAR SC59 Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 11mT Trip, 5mT Release Test Condition: -40°C ~ 150°C Voltage - Supply: 3 V ~ 18 V Current - Supply (Max): 17mA Current - Output (Max): - Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	封装: TO-236-3, SC-59, SOT-23-3	库存8,478
CY8C4147AZA-S285T	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: -	Request a Quote
BSB044N08NN3GXUMA1	Infineon Technologies	MOSFET N-CH 80V 18A/90A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 97µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	封装: -	库存17,175
BTH500301LUAAUMA1	Infineon Technologies	MULTICHIP PROFET & GD Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY9BF322LPMC1-G-MNE2	Infineon Technologies	IC MCU 32BIT 160KB FLASH 64LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 72MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 50 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 23x12b; D/A 2x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: -	库存4,800
FF225R65T3E3P5BPMA1	Infineon Technologies	IHV IHM T XHP 3 3-6 5K AG-XHP3K6 IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 5900 V Current - Collector (Ic) (Max): 225 A Power - Max: 1000 W Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-XHP3K65	封装: -	Request a Quote
TT104N14KOFHPSA1	Infineon Technologies	THYR / DIODE MODULE DK Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.4 kV Current - On State (It (AV)) (Max): 104 A Current - On State (It (RMS)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Hold (Ih) (Max): 200 mA Operating Temperature: 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
TDA38813XUMA1	Infineon Technologies	IFX POL Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 0.9V Voltage - Output (Max): 6V Current - Output: 12A Frequency - Switching: 600kHz, 800kHz, 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 21-PowerUFQFN Supplier Device Package: PG-TSNP-21-1	封装: -	库存9,000
D2520N22TVFXPSA1	Infineon Technologies	DIODE GEN PURP 2520A D7526K0-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 2520A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: BG-D7526K0-1 Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote

IRG4RC10KPBF

Infineon Technologies

IGBT 600V 9A 38W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 9A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Power - Max: 38W
Switching Energy: 160µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 11ns/51ns
Test Condition: 480V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,872

IRGP35B60PDPBF

Infineon Technologies

IGBT 600V 60A 308W TO247AC

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
Power - Max: 308W
Switching Energy: 220µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 26ns/110ns
Test Condition: 390V, 22A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封装: TO-247-3

库存170,688

IRLR9343-701PBF

Infineon Technologies

MOSFET P-CH 55V 20A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,216

IRF6215L-103PBF

Infineon Technologies

MOSFET P-CH 150V 13A TO-262

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,192

IRFI2807

Infineon Technologies

MOSFET N-CH 75V 40A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存5,824

IRF7321D2

Infineon Technologies

MOSFET P-CH 30V 4.7A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,032

IRFP044N

Infineon Technologies

MOSFET N-CH 55V 53A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: TO-247-3

库存19,284

SPA12N50C3XKSA1

Infineon Technologies

MOSFET N-CH 560V 11.6A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存5,760

IRFP250MPBF

Infineon Technologies

MOSFET N-CH 200V 30A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: TO-247-3

库存96,792

IPB80N06S2L06ATMA2

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 69A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,992

BCR10PNH6327XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 130MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存140,508

BBY5103WE6327HTSA1

Infineon Technologies

DIODE TUNING 7V 20MA SOD-323

Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio: 2.2
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 7V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2

封装: SC-76, SOD-323

库存2,448

HFA15PB60PBF

Infineon Technologies

DIODE GEN PURP 600V 15A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-2

库存136,920

BAW 56W H6327

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT323

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 150nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

库存5,952

TLS202B1MBV50HTSA1

Infineon Technologies

LINEAR VOLTAGE REGULATOR

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.57V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 50µA
PSRR: 63dB (10kHz)
Control Features: Current Limit, Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,464

IP2034TRPBF

Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 13.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 3.3V
Current - Output: 40A
Frequency - Switching: 300kHz ~ 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: Power Block (LGA)
Supplier Device Package: -

封装: Power Block (LGA)

库存157,080

BTS50090-1TMB

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5.5 V ~ 38 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Rds On (Typ): 8 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-220-7
Supplier Device Package: PG-TO220-7

封装: TO-220-7

库存5,472

IPS1011RTRRPBF

Infineon Technologies

IC SWITCH IPS 1CH LOW SIDE DPAK

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Rds On (Typ): 10 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Fixed), Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,136

BTS500601TEAAUMA2

Infineon Technologies

IC PWR SW HI-SIDE 1CH TO252-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 19 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16.5A
Rds On (Typ): 6.8 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-11

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存4,048

ICE3B5565I

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback
Voltage - Start Up: 15V
Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
Duty Cycle: 72%
Frequency - Switching: 67kHz
Power (Watts): 240W
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Operating Temperature: -25°C ~ 130°C (TJ)
Package / Case: TO-220-6 Formed Leads
Supplier Device Package: PG-TO220-6
Mounting Type: Through Hole

封装: TO-220-6 Formed Leads

库存6,352

KT130

Infineon Technologies

IC TEMPERATURE SENSOR SOT-23

Resistance in Ohms @ 25°C: 1k
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Power - Max: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存1,658,100

TLE4976-1H

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

Function: Unipolar Switch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 11mT Trip, 5mT Release
Test Condition: -40°C ~ 150°C
Voltage - Supply: 3 V ~ 18 V
Current - Supply (Max): 17mA
Current - Output (Max): -
Output Type: Open Collector
Features: Temperature Compensated
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

封装: TO-236-3, SC-59, SOT-23-3

库存8,478

CY8C4147AZA-S285T

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: -

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BSB044N08NN3GXUMA1

Infineon Technologies

MOSFET N-CH 80V 18A/90A 2WDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M™
Package / Case: 3-WDSON

封装: -

库存17,175

BTH500301LUAAUMA1

Infineon Technologies

MULTICHIP PROFET & GD

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

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CY9BF322LPMC1-G-MNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 72MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 50
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 23x12b; D/A 2x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: -

库存4,800

FF225R65T3E3P5BPMA1

Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-XHP3K6

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 5900 V
Current - Collector (Ic) (Max): 225 A
Power - Max: 1000 W
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-XHP3K65

封装: -

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TT104N14KOFHPSA1

Infineon Technologies

THYR / DIODE MODULE DK

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.4 kV
Current - On State (It (AV)) (Max): 104 A
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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TDA38813XUMA1

Infineon Technologies

IFX POL

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 0.9V
Voltage - Output (Max): 6V
Current - Output: 12A
Frequency - Switching: 600kHz, 800kHz, 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 21-PowerUFQFN
Supplier Device Package: PG-TSNP-21-1

封装: -

库存9,000

D2520N22TVFXPSA1

Infineon Technologies

DIODE GEN PURP 2520A D7526K0-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 2520A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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