页 188 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  188/567
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BUZ31HXKSA1
Infineon Technologies

MOSFET N-CH 200V 14.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存4,832
hot BSO119N03S
Infineon Technologies

MOSFET N-CH 30V 9A 8DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存960,960
IPAW60R380CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存2,768
hot IRFS7440TRLPBF
Infineon Technologies

MOSFET N CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,928
BSP300H6327XUSA1
Infineon Technologies

MOSFET N-CH 800V 190MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存5,824
BSR315PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 620MA SC-59-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 176pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存45,456
hot IRF7452TRPBF
Infineon Technologies

MOSFET N-CH 100V 4.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存36,000
IRFB7546PBF
Infineon Technologies

MOSFET N-CH 60V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存35,046
hot IRFI4020H-117P
Infineon Technologies

MOSFET 2N-CH 200V 9.1A TO-220FP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Power - Max: 21W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack
  • Supplier Device Package: TO-220-5 Full-Pak
封装: TO-220-5 Full Pack
库存15,504
BC857BE6433HTMA1
Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存4,816
IRU1117CY
Infineon Technologies

IC REG LIN POS ADJ 800MA SOT223

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): 3.6V
  • Voltage Dropout (Max): 1.3V @ 1A
  • Current - Output: 800mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存2,736
IR3622MPBF
Infineon Technologies

IC REG CTRLR BUCK 32MLPQ

  • Output Type: Transistor Driver
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 2
  • Output Phases: 2
  • Voltage - Supply (Vcc/Vdd): 7.5 V ~ 14.5 V
  • Frequency - Switching: 200kHz ~ 600kHz
  • Duty Cycle (Max): 84%
  • Synchronous Rectifier: Yes
  • Clock Sync: Yes
  • Serial Interfaces: -
  • Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-MLPQ (5x5)
封装: 32-VFQFN Exposed Pad
库存7,552
BTS410F2E3062ABUMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH T0263-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.7 V ~ 42 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.6A
  • Rds On (Typ): 190 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: PG-TO263-5-2
封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
库存7,296
AUXDI2117STR
Infineon Technologies

IC DRIVER HIGH SIDE SGL 8SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,144
hot IR2122
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8-DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 13 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 130mA, 130mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 250ns, 250ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封装: 8-DIP (0.300", 7.62mm)
库存127,536
1EDI20H12AHXUMA1
Infineon Technologies

IC IGBT DVR 1200V 8DSO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 13 V ~ 35 V
  • Logic Voltage - VIL, VIH: 1.5V, 3.5V
  • Current - Peak Output (Source, Sink): 4A, 3.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 10ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 8-DSO
封装: 8-SOIC (0.295", 7.50mm Width)
库存7,440
IRSM505-055DA2
Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 1.3 Ohm
  • Current - Output / Channel: 2.4A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 400V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Through Hole
  • Package / Case: 32-PowerDIP Module, 23 Leads
  • Supplier Device Package: 23-DIP
封装: 32-PowerDIP Module, 23 Leads
库存2,032
PEF 22504 E V2.1-G
Infineon Technologies

IC LIU E1/T1/J1 160LBGA

  • Function: Line Interface Unit (LIU)
  • Interface: E1, J1, T1
  • Number of Circuits: 4
  • Voltage - Supply: 1.8V, 3.3V
  • Current - Supply: 230mA
  • Power (Watts): 140mW
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 160-LBGA
  • Supplier Device Package: P-LBGA-160
封装: 160-LBGA
库存2,864
XMC1402F064X0064AAXUMA1
Infineon Technologies

IC MCU 32BIT 64KB FLASH 64LQFP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 48
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,784
TLV49645TAXBXA1
Infineon Technologies

IC HALL EFFECT SWITCH 3TO92

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,518
RTN7730X1SA1
Infineon Technologies

RF TXRX MODULE

  • RF Family/Standard: -
  • Protocol: -
  • Modulation: -
  • Frequency: -
  • Data Rate: -
  • Power - Output: -
  • Sensitivity: -
  • Serial Interfaces: -
  • Antenna Type: -
  • Memory Size: -
  • Voltage - Supply: -
  • Current - Receiving: -
  • Current - Transmitting: -
  • Mounting Type: -
  • Operating Temperature: -
  • Package / Case: -
封装: -
库存8,532
IMW120R090M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 26A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封装: -
库存1,302
S29GL01GS11DHB023
Infineon Technologies

PNOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
封装: -
Request a Quote
FS35R12KE3GBOSA1
Infineon Technologies

IGBT MOD 1200V 55A 200W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 55 A
  • Power - Max: 200 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
28382564B
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
TLD5191ESXUMA1
Infineon Technologies

SYNCHRONOUS MOSFET H-BRIDGE DC-D

  • Type: DC DC Controller
  • Topology: Step-Down (Buck), Step-Up (Boost)
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 4.5V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 55V
  • Current - Output / Channel: -
  • Frequency: 200kHz ~ 700kHz
  • Dimming: Analog, PWM
  • Applications: Lighting
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-24
封装: -
库存8,970
IKZA40N65RH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 17ns/165ns
  • Test Condition: 400V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存51
CYT2B97BACQ0AZEGS
Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 144QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 122
  • Program Memory Size: 2.0625MB (2.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 256K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 72x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-LQFP (20x20)
封装: -
库存1,800
ISC750P10LMATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 27.3A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
封装: -
库存10,863
CY8C4147AZE-S255
Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
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