页 232 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

IPP100N06S3L-03

Infineon Technologies

MOSFET N-CH 55V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存6,612

MOSFET (Metal Oxide)

55V

100A (Tc)

5V, 10V

2.2V @ 230µA

550nC @ 10V

26240pF @ 25V

±16V

-

300W (Tc)

3 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP100N06S3-04

Infineon Technologies

MOSFET N-CH 55V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存2,240

MOSFET (Metal Oxide)

55V

100A (Tc)

10V

4V @ 150µA

314nC @ 10V

14230pF @ 25V

±20V

-

214W (Tc)

4.4 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP100N06S3-03

Infineon Technologies

MOSFET N-CH 55V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存3,984

MOSFET (Metal Oxide)

55V

100A (Tc)

10V

4V @ 230µA

480nC @ 10V

21620pF @ 25V

±20V

-

300W (Tc)

3.3 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP08CNE8N G

Infineon Technologies

MOSFET N-CH 85V 95A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存2,912

MOSFET (Metal Oxide)

85V

95A (Tc)

10V

4V @ 130µA

99nC @ 10V

6690pF @ 40V

±20V

-

167W (Tc)

6.4 mOhm @ 95A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP08CN10N G

Infineon Technologies

MOSFET N-CH 100V 95A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存6,784

MOSFET (Metal Oxide)

100V

95A (Tc)

10V

4V @ 130µA

100nC @ 10V

6660pF @ 50V

±20V

-

167W (Tc)

8.5 mOhm @ 95A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP080N06N G

Infineon Technologies

MOSFET N-CH 60V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存2,496

MOSFET (Metal Oxide)

60V

80A (Tc)

10V

4V @ 150µA

93nC @ 10V

3500pF @ 30V

±20V

-

214W (Tc)

8 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP07N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存2,240

MOSFET (Metal Oxide)

30V

50A (Tc)

4.5V, 10V

2V @ 40µA

25nC @ 5V

2782pF @ 15V

±20V

-

94W (Tc)

6.6 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP070N06N G

Infineon Technologies

MOSFET N-CH 60V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存390,000

MOSFET (Metal Oxide)

60V

80A (Tc)

10V

4V @ 180µA

118nC @ 10V

4100pF @ 30V

±20V

-

250W (Tc)

7 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP070N06L G

Infineon Technologies

MOSFET N-CH 60V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存390,000

MOSFET (Metal Oxide)

60V

80A (Tc)

4.5V, 10V

2V @ 150µA

126nC @ 10V

4300pF @ 30V

±20V

-

214W (Tc)

7 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP06CNE8N G

Infineon Technologies

MOSFET N-CH 85V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9240pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存6,224

MOSFET (Metal Oxide)

85V

100A (Tc)

10V

4V @ 180µA

138nC @ 10V

9240pF @ 40V

±20V

-

214W (Tc)

6.5 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP06CN10N G

Infineon Technologies

MOSFET N-CH 100V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存8,952

MOSFET (Metal Oxide)

100V

100A (Tc)

10V

4V @ 180µA

139nC @ 10V

9200pF @ 50V

±20V

-

214W (Tc)

6.5 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP065N06LGAKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存2,576

MOSFET (Metal Oxide)

60V

80A (Tc)

4.5V, 10V

2V @ 180µA

157nC @ 10V

5100pF @ 30V

±20V

-

250W (Tc)

6.5 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP05N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存3,328

MOSFET (Metal Oxide)

30V

80A (Tc)

4.5V, 10V

2V @ 40µA

25nC @ 5V

3209pF @ 15V

±20V

-

94W (Tc)

5.3 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP054NE8NGHKSA2

Infineon Technologies

MOSFET N-CH 85V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存5,440

MOSFET (Metal Oxide)

85V

100A (Tc)

10V

4V @ 250µA

180nC @ 10V

12100pF @ 40V

±20V

-

300W (Tc)

5.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP050N06N G

Infineon Technologies

MOSFET N-CH 60V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存12,420

MOSFET (Metal Oxide)

60V

100A (Tc)

10V

4V @ 270µA

167nC @ 10V

6100pF @ 30V

±20V

-

300W (Tc)

5 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPP04N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5203pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存4,544

MOSFET (Metal Oxide)

30V

80A (Tc)

4.5V, 10V

2V @ 70µA

40nC @ 5V

5203pF @ 15V

±20V

-

107W (Tc)

3.8 mOhm @ 55A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP048N06L G

Infineon Technologies

MOSFET N-CH 60V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存5,616

MOSFET (Metal Oxide)

60V

100A (Tc)

4.5V, 10V

2V @ 270µA

225nC @ 10V

7600pF @ 30V

±20V

-

300W (Tc)

4.7 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP03N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存4,816

MOSFET (Metal Oxide)

30V

80A (Tc)

4.5V, 10V

2V @ 100µA

59nC @ 5V

7624pF @ 15V

±20V

-

150W (Tc)

3.1 mOhm @ 55A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPI80N06S3L-08

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存7,936

MOSFET (Metal Oxide)

55V

80A (Tc)

5V, 10V

2.2V @ 55µA

134nC @ 10V

6475pF @ 25V

±16V

-

105W (Tc)

7.9 mOhm @ 43A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N06S3L06XK

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9417pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,344

MOSFET (Metal Oxide)

55V

80A (Tc)

5V, 10V

2.2V @ 80µA

196nC @ 10V

9417pF @ 25V

±16V

-

136W (Tc)

5.9 mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N06S3L-05

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13060pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 69A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,680

MOSFET (Metal Oxide)

55V

80A (Tc)

5V, 10V

2.2V @ 115µA

273nC @ 10V

13060pF @ 25V

±16V

-

165W (Tc)

4.8 mOhm @ 69A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N06S3-07

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7768pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,336

MOSFET (Metal Oxide)

55V

80A (Tc)

10V

4V @ 80µA

170nC @ 10V

7768pF @ 25V

±20V

-

135W (Tc)

6.8 mOhm @ 51A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N06S3-05

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,288

MOSFET (Metal Oxide)

55V

80A (Tc)

10V

4V @ 110µA

240nC @ 10V

10760pF @ 25V

±20V

-

165W (Tc)

5.4 mOhm @ 63A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI77N06S3-09

Infineon Technologies

MOSFET N-CH 55V 77A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5335pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 39A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,376

MOSFET (Metal Oxide)

55V

77A (Tc)

10V

4V @ 55µA

103nC @ 10V

5335pF @ 25V

±20V

-

107W (Tc)

9.1 mOhm @ 39A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI60R299CPXKSA1

Infineon Technologies

MOSFET N-CH 600V 11A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,824

MOSFET (Metal Oxide)

600V

11A (Tc)

10V

3.5V @ 440µA

29nC @ 10V

1100pF @ 100V

±20V

-

96W (Tc)

299 mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI45N06S3L-13

Infineon Technologies

MOSFET N-CH 55V 45A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,464

MOSFET (Metal Oxide)

55V

45A (Tc)

5V, 10V

2.2V @ 30µA

75nC @ 10V

3600pF @ 25V

±16V

-

65W (Tc)

13.4 mOhm @ 26A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI45N06S3-16

Infineon Technologies

MOSFET N-CH 55V 45A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存4,576

MOSFET (Metal Oxide)

55V

45A (Tc)

10V

4V @ 30µA

57nC @ 10V

2980pF @ 25V

±20V

-

65W (Tc)

15.7 mOhm @ 23A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI25N06S3L-22

Infineon Technologies

MOSFET N-CH 55V 25A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 21.6 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,064

MOSFET (Metal Oxide)

55V

25A (Tc)

5V, 10V

2.2V @ 20µA

47nC @ 10V

2260pF @ 25V

±16V

-

50W (Tc)

21.6 mOhm @ 17A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI25N06S3-25

Infineon Technologies

MOSFET N-CH 55V 25A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,184

MOSFET (Metal Oxide)

55V

25A (Tc)

10V

4V @ 20µA

41nC @ 10V

1862pF @ 25V

±20V

-

48W (Tc)

25.1 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI14N03LA

Infineon Technologies

MOSFET N-CH 25V 30A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存4,784

MOSFET (Metal Oxide)

25V

30A (Tc)

4.5V, 10V

2V @ 20µA

8.3nC @ 5V

1043pF @ 15V

±20V

-

46W (Tc)

13.9 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA