图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存119,760 |
|
MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | ±20V | - | 200W (Tc) | 5.3 mOhm @ 101A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 87A TO-220AB
|
封装: TO-220-3 |
库存63,012 |
|
MOSFET (Metal Oxide) | 40V | 87A (Tc) | 10V | 4V @ 100µA | 54nC @ 10V | 2150pF @ 25V | ±20V | - | 143W (Tc) | 9.2 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 61A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,192 |
|
MOSFET (Metal Oxide) | 100V | 61A (Tc) | 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | ±20V | - | 140W (Tc) | 13.9 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存15,900 |
|
MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 6 mOhm @ 71A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,712 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | - | 80W (Tc) | 13.9 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 42A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存105,300 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
LOW POWER_LEGACY
|
封装: - |
库存4,864 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 500V 10A TO220-3
|
封装: TO-220-3 |
库存2,112 |
|
MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | ±20V | - | 89W (Tc) | 350 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 550V 10A TO220-3
|
封装: TO-220-3 |
库存5,056 |
|
MOSFET (Metal Oxide) | 550V | 10A (Tc) | 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | ±20V | - | 89W (Tc) | 350 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 47A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存6,320 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | ±20V | - | 175W (Tc) | 26 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 47A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,104 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | ±20V | - | 175W (Tc) | 33 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,800 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 253µA | 130nC @ 10V | 10300pF @ 25V | ±20V | - | 137W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,432 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 2.2V @ 340µA | 234nC @ 10V | 15000pF @ 25V | ±16V | - | 136W (Tc) | 3.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,056 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 340µA | 205nC @ 10V | 14790pF @ 25V | ±20V | - | 136W (Tc) | 3.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 4VSON
|
封装: 4-PowerTSFN |
库存2,416 |
|
MOSFET (Metal Oxide) | 650V | 10.9A (Tc) | 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | ±20V | - | 104.2W (Tc) | 340 mOhm @ 4.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,816 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 64nC @ 10V | 4910pF @ 50V | ±20V | - | 150W (Tc) | 6.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 179A DIRECTFET
|
封装: DirectFET? Isometric M4 |
库存6,752 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta), 68A (Tc) | 10V | 4.9V @ 150µA | 53nC @ 10V | 2170pF @ 25V | ±20V | - | 2.5W (Ta), 63W (Tc) | 7 mOhm @ 41A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET? M4 | DirectFET? Isometric M4 |
||
Infineon Technologies |
MOSFET N CH 100V 35A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存3,072 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | ±20V | - | 91W (Tc) | 28.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-262
|
封装: TO-220-3 |
库存6,832 |
|
- | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO220AB
|
封装: TO-220-3 |
库存3,664 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | - | 80W (Tc) | 13.9 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存4,992 |
|
MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 2.2V @ 140µA | 239nC @ 10V | 17600pF @ 25V | ±16V | - | 188W (Tc) | 1.05 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存105,708 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3830pF @ 25V | ±20V | - | 260W (Tc) | 15 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 61A TO220AB
|
封装: TO-220-3 |
库存4,336 |
|
MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB
|
封装: TO-220-3 |
库存393,408 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3270pF @ 25V | ±20V | - | 200W (Tc) | 12.6 mOhm @ 48A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,256 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | ±20V | - | 150W (Tc) | 5.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 9A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存519,888 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | - | 83W (Tc) | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET NCH 100V 58A PQFN
|
封装: 8-PowerTDFN |
库存7,808 |
|
MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 4V @ 100µA | 74nC @ 10V | 3050pF @ 25V | ±20V | - | 4.3W (Ta), 125W (Tc) | 14.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,872 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 345µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存7,968 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 10A DIRECTFET
|
封装: DirectFET? Isometric M4 |
库存4,432 |
|
MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4.5V, 10V | 2.5V @ 150µA | 66nC @ 4.5V | 5305pF @ 25V | ±16V | - | 2.5W (Ta), 62.5W (Tc) | 10 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET? M4 | DirectFET? Isometric M4 |