页 12 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7901D1TR	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存63,732	Logic Level Gate	30V	6.2A	38 mOhm @ 5A, 4.5V	1V @ 250µA	10.5nC @ 5V	780pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7901D1	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存274,680	Logic Level Gate	30V	6.2A	38 mOhm @ 5A, 4.5V	1V @ 250µA	10.5nC @ 5V	780pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7389TR	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存13,944	Logic Level Gate	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7379TR	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存292,884	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7530TR	Infineon Technologies	MOSFET 2N-CH 20V 5.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存15,276	Standard	20V	5.4A	30 mOhm @ 5.4A, 4.5V	1.2V @ 250µA	26nC @ 4.5V	1310pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
IRF7509TR	Infineon Technologies	MOSFET N/P-CH 30V 2.7A/2A MICRO8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存30,012	Logic Level Gate	30V	2.7A, 2A	110 mOhm @ 1.4A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
IRF7504TR	Infineon Technologies	MOSFET 2P-CH 20V 1.7A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存19,296	Logic Level Gate	20V	1.7A	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
IRF9956	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存189,156	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9953	Infineon Technologies	MOSFET 2P-CH 30V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存231,708	Logic Level Gate	30V	2.3A	250 mOhm @ 1A, 10V	1V @ 250µA	12nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9952	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存557,988	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7389	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存80,868	Logic Level Gate	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7379	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存182,868	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
94-3449	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,776	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7324	Infineon Technologies	MOSFET 2P-CH 20V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,712	Logic Level Gate	20V	9A	18 mOhm @ 9A, 4.5V	1V @ 250µA	63nC @ 5V	2940pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7316TR	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存121,584	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7311TR	Infineon Technologies	MOSFET 2N-CH 20V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存376,068	Logic Level Gate	20V	6.6A	29 mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7304TR	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存430,128	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7102	Infineon Technologies	MOSFET 2N-CH 50V 2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存39,600	Standard	50V	2A	300 mOhm @ 1.5A, 10V	3V @ 250µA	6.6nC @ 10V	120pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7106	Infineon Technologies	MOSFET N/P-CH 20V 3A/2.5A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存43,776	Standard	20V	3A, 2.5A	125 mOhm @ 1A, 10V	1V @ 250µA	25nC @ 10V	300pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFH4257DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 25A 24PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Power - Max: 25W, 28W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: Dual PQFN (5x4)	封装: 8-PowerVDFN	库存5,872	Logic Level Gate	25V	25A	3.4 mOhm @ 25A, 10V	2.1V @ 35µA	15nC @ 4.5V	1321pF @ 13V	25W, 28W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	Dual PQFN (5x4)
IRF3575DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 303A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 303A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 32-PowerWFQFN Supplier Device Package: 32-PQFN (6x6)	封装: 32-PowerWFQFN	库存146,304	Standard	25V	303A (Tc)	-	-	-	-	-	-	Surface Mount	32-PowerWFQFN	32-PQFN (6x6)
IRF9395MTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 14A DIRECTFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V Power - Max: 2.1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MC Supplier Device Package: DIRECTFET? MC	封装: DirectFET? Isometric MC	库存467,496	Logic Level Gate	30V	14A	7 mOhm @ 14A, 10V	2.4V @ 50µA	64nC @ 10V	3241pF @ 15V	2.1W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric MC	DIRECTFET? MC
IRF6802SDTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 16A SA FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V Power - Max: 1.7W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric SA Supplier Device Package: DIRECTFET? SA	封装: DirectFET? Isometric SA	库存2,208	Logic Level Gate	25V	16A	4.2 mOhm @ 16A, 10V	2.1V @ 35µA	13nC @ 4.5V	1350pF @ 13V	1.7W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric SA	DIRECTFET? SA
IRFH7911TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 13A/28A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Power - Max: 2.4W, 3.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-PowerVQFN Supplier Device Package: PQFN (5x6)	封装: 18-PowerVQFN	库存115,224	Logic Level Gate	30V	13A, 28A	8.6 mOhm @ 12A, 10V	2.35V @ 25µA	12nC @ 4.5V	1060pF @ 15V	2.4W, 3.4W	-55°C ~ 150°C (TJ)	Surface Mount	18-PowerVQFN	PQFN (5x6)
AUIRFN8459TR	Infineon Technologies	MOSFET 2N-CH 40V 50A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	封装: 8-PowerTDFN	库存6,864	Standard	40V	50A	5.9 mOhm @ 40A, 10V	3.9V @ 50µA	60nC @ 10V	2250pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
BSG0810NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/39A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 39A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封装: 8-PowerTDFN	库存6,256	Logic Level Gate, 4.5V Drive	25V	19A, 39A	3 mOhm @ 20A, 10V	2V @ 250µA	8.4nC @ 4.5V	1040pF @ 12V	2.5W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
BSG0813NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/33A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 33A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封装: 8-PowerTDFN	库存3,024	Logic Level Gate, 4.5V Drive	25V	19A, 33A	3 mOhm @ 20A, 10V	2V @ 250µA	8.4nC @ 4.5V	1100pF @ 12V	2.5W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
IRF8910PBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,376	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC0910NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 16A/31A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封装: 8-PowerTDFN	库存3,136	Logic Level Gate, 4.5V Drive	25V	11A, 31A	4.6 mOhm @ 25A, 10V	2V @ 250µA	6.6nC @ 4.5V	4500pF @ 12V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
AUIRFN8458TR	Infineon Technologies	MOSFET 2N-CH 40V 43A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	封装: 8-PowerTDFN	库存3,120	Standard	40V	43A (Tc)	10 mOhm @ 26A, 10V	3.9V @ 25µA	33nC @ 10V	1060pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)

IRF7901D1TR

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存63,732

Logic Level Gate

30V

6.2A

38 mOhm @ 5A, 4.5V

1V @ 250µA

10.5nC @ 5V

780pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7901D1

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存274,680

Logic Level Gate

30V

6.2A

38 mOhm @ 5A, 4.5V

1V @ 250µA

10.5nC @ 5V

780pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7389TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存13,944

Logic Level Gate

30V

-

29 mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7379TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存292,884

Standard

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7530TR

Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存15,276

Standard

20V

5.4A

30 mOhm @ 5.4A, 4.5V

1.2V @ 250µA

26nC @ 4.5V

1310pF @ 15V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

IRF7509TR

Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存30,012

Logic Level Gate

30V

2.7A, 2A

110 mOhm @ 1.4A, 10V

1V @ 250µA

12nC @ 10V

210pF @ 25V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

IRF7504TR

Infineon Technologies

MOSFET 2P-CH 20V 1.7A MICRO8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存19,296

Logic Level Gate

20V

1.7A

270 mOhm @ 1.2A, 4.5V

700mV @ 250µA

8.2nC @ 4.5V

240pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

IRF9956

Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存189,156

Logic Level Gate

30V

3.5A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9953

Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存231,708

Logic Level Gate

30V

2.3A

250 mOhm @ 1A, 10V

1V @ 250µA

12nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9952

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存557,988

Logic Level Gate

30V

3.5A, 2.3A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7389

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存80,868

Logic Level Gate

30V

-

29 mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7379

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存182,868

Standard

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

94-3449

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,776

Logic Level Gate

55V

3.4A

105 mOhm @ 3.4A, 10V

1V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7324

Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,712

Logic Level Gate

20V

9A

18 mOhm @ 9A, 4.5V

1V @ 250µA

63nC @ 5V

2940pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7316TR

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存121,584

Logic Level Gate

30V

4.9A

58 mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7311TR

Infineon Technologies

MOSFET 2N-CH 20V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存376,068

Logic Level Gate

20V

6.6A

29 mOhm @ 6A, 4.5V

700mV @ 250µA

27nC @ 4.5V

900pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7304TR

Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存430,128

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

700mV @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7102

Infineon Technologies

MOSFET 2N-CH 50V 2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存39,600

Standard

50V

2A

300 mOhm @ 1.5A, 10V

3V @ 250µA

6.6nC @ 10V

120pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7106

Infineon Technologies

MOSFET N/P-CH 20V 3A/2.5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存43,776

Standard

20V

3A, 2.5A

125 mOhm @ 1A, 10V

1V @ 250µA

25nC @ 10V

300pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFH4257DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 25A 24PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Power - Max: 25W, 28W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: Dual PQFN (5x4)

封装: 8-PowerVDFN

库存5,872

Logic Level Gate

25V

25A

3.4 mOhm @ 25A, 10V

2.1V @ 35µA

15nC @ 4.5V

1321pF @ 13V

25W, 28W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

Dual PQFN (5x4)

IRF3575DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 303A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 303A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Supplier Device Package: 32-PQFN (6x6)

封装: 32-PowerWFQFN

库存146,304

Standard

25V

303A (Tc)

-

Surface Mount

32-PowerWFQFN

32-PQFN (6x6)

IRF9395MTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Power - Max: 2.1W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MC
Supplier Device Package: DIRECTFET? MC

封装: DirectFET? Isometric MC

库存467,496

Logic Level Gate

30V

14A

7 mOhm @ 14A, 10V

2.4V @ 50µA

64nC @ 10V

3241pF @ 15V

2.1W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric MC

DIRECTFET? MC

IRF6802SDTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 16A SA

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Power - Max: 1.7W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric SA
Supplier Device Package: DIRECTFET? SA

封装: DirectFET? Isometric SA

库存2,208

Logic Level Gate

25V

16A

4.2 mOhm @ 16A, 10V

2.1V @ 35µA

13nC @ 4.5V

1350pF @ 13V

1.7W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric SA

DIRECTFET? SA

IRFH7911TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-PowerVQFN
Supplier Device Package: PQFN (5x6)

封装: 18-PowerVQFN

库存115,224

Logic Level Gate

30V

13A, 28A

8.6 mOhm @ 12A, 10V

2.35V @ 25µA

12nC @ 4.5V

1060pF @ 15V

2.4W, 3.4W

-55°C ~ 150°C (TJ)

Surface Mount

18-PowerVQFN

PQFN (5x6)

AUIRFN8459TR

Infineon Technologies

MOSFET 2N-CH 40V 50A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

封装: 8-PowerTDFN

库存6,864

Standard

40V

50A

5.9 mOhm @ 40A, 10V

3.9V @ 50µA

60nC @ 10V

2250pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

BSG0810NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/39A 8TISON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封装: 8-PowerTDFN

库存6,256

Logic Level Gate, 4.5V Drive

25V

19A, 39A

3 mOhm @ 20A, 10V

2V @ 250µA

8.4nC @ 4.5V

1040pF @ 12V

2.5W

-55°C ~ 155°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

BSG0813NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/33A 8TISON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 33A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封装: 8-PowerTDFN

库存3,024

Logic Level Gate, 4.5V Drive

25V

19A, 33A

3 mOhm @ 20A, 10V

2V @ 250µA

8.4nC @ 4.5V

1100pF @ 12V

2.5W

-55°C ~ 155°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

IRF8910PBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,376

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC0910NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封装: 8-PowerTDFN

库存3,136

Logic Level Gate, 4.5V Drive

25V

11A, 31A

4.6 mOhm @ 25A, 10V

2V @ 250µA

6.6nC @ 4.5V

4500pF @ 12V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

AUIRFN8458TR

Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

封装: 8-PowerTDFN

库存3,120

Standard

40V

43A (Tc)

10 mOhm @ 26A, 10V

3.9V @ 25µA

33nC @ 10V

1060pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)