页 90 - IXYS 产品 | 深圳黑森尔电子

零件编号	制造商	描述	封装	库存
MIXA450PF1200TSF	IXYS	IGBT MODULE 1200V 450A IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 650A Power - Max: 2100W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存3,520
MUBW75-12T8	IXYS	MODULE IGBT CBI E3 IGBT Type: Trench Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 355W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.35nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	封装: E3	库存7,792
IXDN75N120	IXYS	IGBT 1200V 150A SOT-227B IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 660W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封装: SOT-227-4, miniBLOC	库存5,568
IXFN90N30	IXYS	MOSFET N-CH 300V 90A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封装: SOT-227-4, miniBLOC	库存6,448
IXFN64N50PD3	IXYS	MOSFET N-CH 500V 52A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封装: SOT-227-4, miniBLOC	库存5,136
IXTH72N30T	IXYS	MOSFET N-CH 300V 72A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: TO-247-3	库存7,904
IXFP8N50P3	IXYS	MOSFET N-CH 500V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存6,352
IXFH80N25X3	IXYS	MOSFET N-CH 250V 80A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	封装: TO-247-3	库存7,952
IXFH6N100F	IXYS	MOSFET N-CH 1KV 6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	封装: TO-247-3	库存6,592
IXTQ26N50P	IXYS	MOSFET N-CH 500V 26A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封装: TO-3P-3, SC-65-3	库存43,152
IXFP6N120P	IXYS	MOSFET N-CH 1200V 6A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存7,524
GWM220-004P3-SL	IXYS	MOSFET 6N-CH 40V 180A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	封装: 17-SMD, Flat Leads	库存3,568
MDD172-14N1	IXYS	DIODE MODULE 1.4KV 190A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 190A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	封装: Y4-M6	库存7,488
DSEE55-24N1F	IXYS	DIODE ARRAY GP 1200V 60A I4PAC Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: 1mA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: i4-Pac?-3 Supplier Device Package: i4-PAC?	封装: i4-Pac?-3	库存6,672
VUB72-16NOXT	IXYS	DIODE BRIDGE 1600V 75A Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 20µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1A-PAK Supplier Device Package: V1A-PAK	封装: V1A-PAK	库存7,216
VBO65-08NO7	IXYS	DIODE BRIDGE 800V 65A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	封装: FO-T-A	库存3,264
IXDD404SIA-16	IXYS	IC MOSFET DRVR DUAL 4A 16-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.295", 7.50mm Width)	库存70,728
IXDN404SI-16	IXYS	IC MOSFET DRVR LS 4A DUAL 16SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.295", 7.50mm Width)	库存74,592
IXCY10M35S	IXYS	IC CURRENT REGULATOR DPAK Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 10mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,872
IXBOD1-13RD	IXYS	IC DIODE MODULE BOD 0.2A 1300V Voltage - Clamping: 1300V (1.3kV) Technology: Mixed Technology Number of Circuits: 2 Number of Circuits: 2 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	封装: Radial	库存4,518
IXTH20N65X2	IXYS	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	库存717
CLA30MT1200NPZ-TUB	IXYS	TRIAC 1.2KV 33A TO263HV Triac Type: Standard Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 33 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - Gate Trigger (Igt) (Max): 40 mA Current - Hold (Ih) (Max): 50 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	封装: -	Request a Quote
ITF38IF1200HJ	IXYS	DISC IGBT XPT-GENX4 TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
MDMA210P1600YD	IXYS	DIODE MODULE GP 1600V 210A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io) (per Diode): 210A Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 210 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 1600 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	封装: -	库存30
MDMA450UB1600P-PC	IXYS	MDMA450UB1600PTED-PC Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 250 A Voltage - Forward (Vf) (Max) @ If: 1.81 V @ 450 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Operating Temperature: - Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封装: -	Request a Quote
N3165HA280	IXYS	SCR 2.8KV 6230A W79 Voltage - Off State: 2.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.3 V Current - On State (It (AV)) (Max): 3165 A Current - On State (It (RMS)) (Max): 6230 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W79	封装: -	Request a Quote
IXTA10P50P-TRL	IXYS	MOSFET P-CH 500V 10A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存652,119
IXTA200N055T2-TRL	IXYS	MOSFET N-CH 55V 200A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
R1448NC18J	IXYS	SCR 1.8KV W11 Voltage - Off State: 1.8 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 1800 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 1448A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	封装: -	Request a Quote
IXFY30N25X3	IXYS	MOSFET N-CH 250V 30A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存19,077

MIXA450PF1200TSF

IXYS

IGBT MODULE 1200V 450A

IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 650A
Power - Max: 2100W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存3,520

MUBW75-12T8

IXYS

MODULE IGBT CBI E3

IGBT Type: Trench
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 355W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

封装: E3

库存7,792

IXDN75N120

IXYS

IGBT 1200V 150A SOT-227B

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 660W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封装: SOT-227-4, miniBLOC

库存5,568

IXFN90N30

IXYS

MOSFET N-CH 300V 90A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 90A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

库存6,448

IXFN64N50PD3

IXYS

MOSFET N-CH 500V 52A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 52A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

库存5,136

IXTH72N30T

IXYS

MOSFET N-CH 300V 72A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: TO-247-3

库存7,904

IXFP8N50P3

IXYS

MOSFET N-CH 500V 8A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存6,352

IXFH80N25X3

IXYS

MOSFET N-CH 250V 80A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封装: TO-247-3

库存7,952

IXFH6N100F

IXYS

MOSFET N-CH 1KV 6A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封装: TO-247-3

库存6,592

IXTQ26N50P

IXYS

MOSFET N-CH 500V 26A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

库存43,152

IXFP6N120P

IXYS

MOSFET N-CH 1200V 6A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存7,524

GWM220-004P3-SL

IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

封装: 17-SMD, Flat Leads

库存3,568

MDD172-14N1

IXYS

DIODE MODULE 1.4KV 190A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 190A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1400V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

封装: Y4-M6

库存7,488

DSEE55-24N1F

IXYS

DIODE ARRAY GP 1200V 60A I4PAC

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: i4-Pac?-3
Supplier Device Package: i4-PAC?

封装: i4-Pac?-3

库存6,672

VUB72-16NOXT

IXYS

DIODE BRIDGE 1600V 75A

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 20µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1A-PAK
Supplier Device Package: V1A-PAK

封装: V1A-PAK

库存7,216

VBO65-08NO7

IXYS

DIODE BRIDGE 800V 65A FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 65A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

封装: FO-T-A

库存3,264

IXDD404SIA-16

IXYS

IC MOSFET DRVR DUAL 4A 16-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

库存70,728

IXDN404SI-16

IXYS

IC MOSFET DRVR LS 4A DUAL 16SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

库存74,592

IXCY10M35S

IXYS

IC CURRENT REGULATOR DPAK

Function: Current Regulator
Sensing Method: -
Accuracy: -
Voltage - Input: -
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,872

IXBOD1-13RD

IXYS

IC DIODE MODULE BOD 0.2A 1300V

Voltage - Clamping: 1300V (1.3kV)
Technology: Mixed Technology
Number of Circuits: 2
Number of Circuits: 2
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

封装: Radial

库存4,518

IXTH20N65X2

IXYS

MOSFET N-CH 650V 20A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

库存717

CLA30MT1200NPZ-TUB

IXYS

TRIAC 1.2KV 33A TO263HV

Triac Type: Standard
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Hold (Ih) (Max): 50 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

封装: -

Request a Quote

ITF38IF1200HJ

IXYS

DISC IGBT XPT-GENX4 TO-247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

MDMA210P1600YD

IXYS

DIODE MODULE GP 1600V 210A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io) (per Diode): 210A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 210 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

封装: -

库存30

MDMA450UB1600P-PC

IXYS

MDMA450UB1600PTED-PC

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 250 A
Voltage - Forward (Vf) (Max) @ If: 1.81 V @ 450 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封装: -

Request a Quote

N3165HA280

IXYS

SCR 2.8KV 6230A W79

Voltage - Off State: 2.8 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.3 V
Current - On State (It (AV)) (Max): 3165 A
Current - On State (It (RMS)) (Max): 6230 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W79

封装: -

Request a Quote

IXTA10P50P-TRL

IXYS

MOSFET P-CH 500V 10A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存652,119

IXTA200N055T2-TRL

IXYS

MOSFET N-CH 55V 200A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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R1448NC18J

IXYS

SCR 1.8KV W11

Voltage - Off State: 1.8 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 1800 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 1448A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W11

封装: -

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IXFY30N25X3

IXYS

MOSFET N-CH 250V 30A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存19,077