页 76 - IXYS 产品 | 深圳黑森尔电子

零件编号	制造商	描述	封装	库存
IXBR42N170	IXYS	IGBT 1700V 57A 200W ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 42A Power - Max: 200W Switching Energy: - Input Type: Standard Gate Charge: 188nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.32µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	封装: ISOPLUS247?	库存4,400
IXYT30N65C3H1HV	IXYS	IGBT 650V 60A 270W TO268HV IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 118A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 270W Switching Energy: 1mJ (on), 270µJ (off) Input Type: Standard Gate Charge: 44nC Td (on/off) @ 25°C: 21ns/75ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	库存5,824
IXYP15N65C3D1M	IXYS	IGBT 650V 16A 48W TO-220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 48W Switching Energy: 270µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 15ns/68ns Test Condition: 400V, 15A, 20 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封装: TO-220-3	库存6,640
IXXX160N65B4	IXYS	IGBT 650V 310A 940W PLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 310A Current - Collector Pulsed (Icm): 860A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Power - Max: 940W Switching Energy: 3.3mJ (on), 1.88mJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 52ns/220ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封装: TO-247-3	库存6,312
MDI100-12A3	IXYS	IGBT NPT BUCK 1200V 135A Y4-M5 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Power - Max: 560W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 5.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M5 Supplier Device Package: Y4-M5	封装: Y4-M5	库存6,304
MIXA10WB1200TML	IXYS	IGBT MODULE 1200V 12A HEX IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 17A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	封装: E1	库存3,120
MIXA20W1200TMH	IXYS	IGBT MODULE 1200V 28A HEX IGBT Type: PT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 28A Power - Max: 100W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: MiniPack2 Supplier Device Package: MiniPack2	封装: MiniPack2	库存2,208
IXFT23N80Q	IXYS	MOSFET N-CH 800V 23A TO-268(D3) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	库存5,616
IXTH24N50	IXYS	MOSFET N-CH 500V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: TO-247-3	库存7,664
IXTA5N50P	IXYS	MOSFET N-CH 500V 4.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,104
IXTY02N120P	IXYS	MOSFET N-CH 1200V 0.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,640
IXTX32P60P	IXYS	MOSFET P-CH 600V 32A PLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封装: TO-247-3	库存6,204
IXZR18N50A-00	IXYS	RF MOSFET N-CHANNEL PLUS247-3 Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 350W Voltage - Rated: 500V Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封装: TO-247-3	库存6,792
IXZR08N120	IXYS	RF MOSFET N-CHANNEL PLUS247-3 Transistor Type: N-Channel Frequency: 100MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 250W Voltage - Rated: 1200V Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封装: TO-247-3	库存6,012
HVL900-16IO1	IXYS	IC CTLR AC 900A 1600V HVL Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 900A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封装: Module	库存4,016
MCNA120P2200TA	IXYS	MOD THYRISTOR TRI 22KV TO-240 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2200V Current - On State (It (AV)) (Max): 120A Current - On State (It (RMS)) (Max): 190A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封装: TO-240AA	库存3,968
MCMA35PD1200TB	IXYS	MOD THYRISTOR DUAL 12KV TO-240 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 35A Current - On State (It (RMS)) (Max): 55A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 78mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封装: TO-240AA	库存2,592
DPF60XA400NA	IXYS	DIODE MODULE 400V 60A SOT227B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Operating Temperature - Junction: -	封装: SOT-227-4, miniBLOC	库存4,464
DSEP29-06B	IXYS	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存6,768
HTZ260G14K	IXYS	DIODE MODULE 14KV 4.7A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 14000V Current - Average Rectified (Io) (per Diode): 4.7A Voltage - Forward (Vf) (Max) @ If: 16V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 14000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存5,968
DSEP2X35-06C	IXYS	DIODE MODULE 600V 35A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 35A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 250µA @ 600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封装: SOT-227-4, miniBLOC	库存3,280
DSEI2X61-04C	IXYS	DIODE MODULE 400V 60A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 200µA @ 400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封装: SOT-227-4, miniBLOC	库存2,784
VUO80-12NO1	IXYS	RECT BRIDGE 3PH 82A 1200V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 82A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	封装: V1-A	库存2,096
IXS839S1	IXYS	IC MOSFET DRIVER SYNC BUCK 8SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 24V Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,264
IXBOD1-20R	IXYS	IC DIODE MODULE BOD 0.9A 2000V Voltage - Clamping: 2000V (2kV) Technology: Mixed Technology Number of Circuits: 3 Number of Circuits: 3 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	封装: Radial	库存7,560
N1718NC180	IXYS	SCR 1.8KV 3450A W11 Voltage - Off State: 1.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.85 V Current - On State (It (AV)) (Max): 1718 A Current - On State (It (RMS)) (Max): 3450 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 29900A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	封装: -	Request a Quote
IXTP150N15X4	IXYS	MOSFET N-CH 150V 150A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: -	Request a Quote
MIXG330PF1200TSF	IXYS	IGBT MODULE - PHASELEG SIMBUS F- IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
MCMA700P1600CA	IXYS	SCR MODULE 1.6KV 700A COMPACK Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 700 A Current - On State (It (RMS)) (Max): 1100 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: ComPack	封装: -	Request a Quote
IXFT80N65X2HV-TRL	IXYS	MOSFET N-CH 650V 80A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote

IXBR42N170

IXYS

IGBT 1700V 57A 200W ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 57A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 42A
Power - Max: 200W
Switching Energy: -
Input Type: Standard
Gate Charge: 188nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.32µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

封装: ISOPLUS247?

库存4,400

IXYT30N65C3H1HV

IXYS

IGBT 650V 60A 270W TO268HV

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 118A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 270W
Switching Energy: 1mJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 44nC
Td (on/off) @ 25°C: 21ns/75ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 120ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

库存5,824

IXYP15N65C3D1M

IXYS

IGBT 650V 16A 48W TO-220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 48W
Switching Energy: 270µJ (on), 230µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 15ns/68ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封装: TO-220-3

库存6,640

IXXX160N65B4

IXYS

IGBT 650V 310A 940W PLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 310A
Current - Collector Pulsed (Icm): 860A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Power - Max: 940W
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 52ns/220ns
Test Condition: 400V, 80A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封装: TO-247-3

库存6,312

MDI100-12A3

IXYS

IGBT NPT BUCK 1200V 135A Y4-M5

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 560W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Supplier Device Package: Y4-M5

封装: Y4-M5

库存6,304

MIXA10WB1200TML

IXYS

IGBT MODULE 1200V 12A HEX

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 17A
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

封装: E1

库存3,120

MIXA20W1200TMH

IXYS

IGBT MODULE 1200V 28A HEX

IGBT Type: PT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 28A
Power - Max: 100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MiniPack2
Supplier Device Package: MiniPack2

封装: MiniPack2

库存2,208

IXFT23N80Q

IXYS

MOSFET N-CH 800V 23A TO-268(D3)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

库存5,616

IXTH24N50

IXYS

MOSFET N-CH 500V 24A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: TO-247-3

库存7,664

IXTA5N50P

IXYS

MOSFET N-CH 500V 4.8A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,104

IXTY02N120P

IXYS

MOSFET N-CH 1200V 0.2A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 75 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,640

IXTX32P60P

IXYS

MOSFET P-CH 600V 32A PLUS247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封装: TO-247-3

库存6,204

IXZR18N50A-00

IXYS

RF MOSFET N-CHANNEL PLUS247-3

Transistor Type: N-Channel
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 350W
Voltage - Rated: 500V
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封装: TO-247-3

库存6,792

IXZR08N120

IXYS

RF MOSFET N-CHANNEL PLUS247-3

Transistor Type: N-Channel
Frequency: 100MHz
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 250W
Voltage - Rated: 1200V
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封装: TO-247-3

库存6,012

HVL900-16IO1

IXYS

IC CTLR AC 900A 1600V HVL

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): 900A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封装: Module

库存4,016

MCNA120P2200TA

IXYS

MOD THYRISTOR TRI 22KV TO-240

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 2200V
Current - On State (It (AV)) (Max): 120A
Current - On State (It (RMS)) (Max): 190A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封装: TO-240AA

库存3,968

MCMA35PD1200TB

IXYS

MOD THYRISTOR DUAL 12KV TO-240

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 35A
Current - On State (It (RMS)) (Max): 55A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 78mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封装: TO-240AA

库存2,592

DPF60XA400NA

IXYS

DIODE MODULE 400V 60A SOT227B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -

封装: SOT-227-4, miniBLOC

库存4,464

DSEP29-06B

IXYS

DIODE GEN PURP 600V 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存6,768

HTZ260G14K

IXYS

DIODE MODULE 14KV 4.7A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 14000V
Current - Average Rectified (Io) (per Diode): 4.7A
Voltage - Forward (Vf) (Max) @ If: 16V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 14000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存5,968

DSEP2X35-06C

IXYS

DIODE MODULE 600V 35A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 35A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封装: SOT-227-4, miniBLOC

库存3,280

DSEI2X61-04C

IXYS

DIODE MODULE 400V 60A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 200µA @ 400V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封装: SOT-227-4, miniBLOC

库存2,784

VUO80-12NO1

IXYS

RECT BRIDGE 3PH 82A 1200V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 82A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

封装: V1-A

库存2,096

IXS839S1

IXYS

IC MOSFET DRIVER SYNC BUCK 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 24V
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,264

IXBOD1-20R

IXYS

IC DIODE MODULE BOD 0.9A 2000V

Voltage - Clamping: 2000V (2kV)
Technology: Mixed Technology
Number of Circuits: 3
Number of Circuits: 3
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

封装: Radial

库存7,560

N1718NC180

IXYS

SCR 1.8KV 3450A W11

Voltage - Off State: 1.8 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.85 V
Current - On State (It (AV)) (Max): 1718 A
Current - On State (It (RMS)) (Max): 3450 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 29900A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W11

封装: -

Request a Quote

IXTP150N15X4

IXYS

MOSFET N-CH 150V 150A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: -

Request a Quote

MIXG330PF1200TSF

IXYS

IGBT MODULE - PHASELEG SIMBUS F-

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

MCMA700P1600CA

IXYS

SCR MODULE 1.6KV 700A COMPACK

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 700 A
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ComPack

封装: -

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IXFT80N65X2HV-TRL

IXYS

MOSFET N-CH 650V 80A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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