页 34 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

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IXGH17N100A
IXYS

IGBT 1000V 34A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
  • Power - Max: 150W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 17A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存3,552
IXBH20N300
IXYS

IGBT 3000V 50A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.35µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封装: TO-247-3
库存5,600
MKI50-06A7
IXYS

MOD IGBT H-BRIDGE 600V 72A E2

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 72A
  • Power - Max: 225W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封装: E2
库存3,472
IXYN120N120C3
IXYS

IGBT 1200 SOT227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Power - Max: 1200W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
  • Current - Collector Cutoff (Max): 25µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存5,776
IXFH80N06
IXYS

MOSFET N-CH 60V 80A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,240
IXFV12N120PS
IXYS

MOSFET N-CH 1200V 12A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
封装: PLUS-220SMD
库存6,768
IXFN34N100
IXYS

MOSFET N-CH 1000V 34A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存3,328
IXFR48N60P
IXYS

MOSFET N-CH 600V 32A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
封装: ISOPLUS247?
库存7,616
IXTK82N25P
IXYS

MOSFET N-CH 250V 82A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 41A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存6,832
IXTA36N30T
IXYS

MOSFET N-CH 300V 36A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,520
MCO600-20IO1
IXYS

MOD THYRISTOR SGL 2000V Y1-CU

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 2000V
  • Current - On State (It (AV)) (Max): 600A
  • Current - On State (It (RMS)) (Max): 928A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 16000A
  • Current - Hold (Ih) (Max): 300mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
封装: Y1-CU
库存5,568
hot MCC310-14IO1
IXYS

MOD THYRISTOR DUAL 1400V Y2-DCB

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 320A
  • Current - On State (It (RMS)) (Max): 500A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: Module
库存6,896
VHF125-12IO7
IXYS

RECT BRIDGE HALF 1200V PWS-E1

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
  • Number of SCRs, Diodes: 2 SCRs, 2 Diodes
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): 89A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
封装: PWS-E1
库存5,600
hot MCD132-08IO1
IXYS

MOD THYRISTOR/DIODE 800V Y4-M6

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 130A
  • Current - On State (It (RMS)) (Max): 300A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存5,376
MCD95-16IO8B
IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 116A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存7,776
DSI17-08A
IXYS

DIODE AVALANCHE 800V 25A DO203AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: DO-203AA, DO-4, Stud
库存5,216
hot DSS2X121-0045B
IXYS

DIODE MODULE 45V 120A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120mA @ 45V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存7,312
VU068-08N07
IXYS

3 PHASE BRIDGE RECTIFIER 800V 68

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 68A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 500µA @ 800V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存3,360
VUO16012NO7
IXYS

BRIDGE RECT 3 PHASE 1200V 175A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 175A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
  • Supplier Device Package: PWS-E1
封装: PWS-E1
库存3,232
VBO25-16NO2
IXYS

DIODE BRIDGE 31A 1600V AVAL FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
封装: 4-Square, FO-A
库存6,576
IXBOD1-28R
IXYS

IC DIODE MODULE BOD 0.9A 2800V

  • Voltage - Clamping: 2800V (2.8kV)
  • Technology: Mixed Technology
  • Number of Circuits: 3
  • Number of Circuits: 3
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
封装: Radial
库存8,514
IXFA72N20X3
IXYS

MOSFET N-CH 200V 72A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA (IXFA)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存456
CMA40E1600HR
IXYS

SCR 1.6KV 63A ISO247

  • Voltage - Off State: 1.6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 1.5 V
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Voltage - On State (Vtm) (Max): 1.23 V
  • Current - On State (It (AV)) (Max): 40 A
  • Current - On State (It (RMS)) (Max): 63 A
  • Current - Hold (Ih) (Max): 100 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
  • SCR Type: Standard Recovery
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
封装: -
库存30
MCC550-16IO1
IXYS

MOD SCR THYRISTOR 1600V

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 550 A
  • Current - On State (It (RMS)) (Max): 1318 A
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 19800A
  • Current - Hold (Ih) (Max): 1 A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
Request a Quote
IXTP24N65X2M
IXYS

MOSFET N-CH 650V 24A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: -
库存876
IXFA50N20X3
IXYS

MOSFET N-CH 200V 50A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MDNA300P2200PTSF
IXYS

DIODE MOD GP 2.2KV 300A SIMBUS

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SimBus F
  • Supplier Device Package: SimBus F
封装: -
Request a Quote
IXTP64N10L2
IXYS

MOSFET N-CH 100V 64A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: -
库存1,173
IXTA3N120-TRL
IXYS

MOSFET N-CH 1200V 3A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
DMA10IM1600PZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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