IXYS 产品 - 晶体管 - FET，MOSFET - 单

IXTT16P60P

IXYS

MOSFET P-CH 600V 16A TO-268

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTF1R4N450

IXYS

2500V TO 4500V VERY HI VOLT PWR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 4500V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 40 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC?
• Package / Case: i4-Pac?-5 (3 leads)

封装: i4-Pac?-5 (3 leads)

IXTX1R4N450HV

IXYS

2500V TO 4500V VERY HI VOLT PWR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 4500V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 40 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247HV
• Package / Case: TO-247-3 Variant

封装: TO-247-3 Variant

IXTX6N200P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2000V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247HV
• Package / Case: TO-247-3 Variant

封装: TO-247-3 Variant

IXFN32N100Q3

IXYS

MOSFET N-CH 1000V 28A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

IXFN44N80Q3

IXYS

MOSFET N-CH 800V 37A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 37A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

IXFN100N50Q3

IXYS

MOSFET N-CH 500V 82A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 82A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

IXFN62N80Q3

IXYS

MOSFET N-CH 800V 49A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

IXTT12N150HV

IXYS

MOSFET N-CH 1.5KV 12A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFN80N50Q3

IXYS

MOSFET N-CH 500V 63A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 63A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

MMIX1T132N50P3

IXYS

SMPD HIPERFETS & MOSFETS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Polar3?
• Package / Case: 24-PowerSMD, 22 Leads

封装: 24-PowerSMD, 22 Leads

IXTT2N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 3000V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT3N200P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2000V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFB40N110Q3

IXYS

MOSFET N-CH 1100V 40A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1560W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

IXFN210N30P3

IXYS

MOSFET N-CH 300V 192A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1500W (Tc)
• Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 105A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

IXTH1N450HV

IXYS

2500V TO 4500V VERY HI VOLT PWR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 4500V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247HV
• Package / Case: TO-247-3 Variant

封装: TO-247-3 Variant

IXTH2N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 3000V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247HV
• Package / Case: TO-247-3

封装: TO-247-3

IXFR32N100Q3

IXYS

MOSFET N-CH 1000V 23A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 570W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: TO-247-3

封装: TO-247-3

IXTT1N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 3000V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 195W (Tc)
• Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFR64N60Q3

IXYS

MOSFET N-CH 600V 42A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 568W (Tc)
• Rds On (Max) @ Id, Vgs: 104 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: TO-247-3

封装: TO-247-3

IXTT4N150HV

IXYS

MOSFET N-CH 1.5KV 4A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFX64N60Q3

IXYS

MOSFET N-CH 600V 64A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3

IXTX110N20L2

IXYS

MOSFET N-CH 200V 110A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3

IXTH1N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 3000V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 195W (Tc)
• Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247HV
• Package / Case: TO-247-3 Variant

封装: TO-247-3 Variant

IXFL210N30P3

IXYS

MOSFET N-CH 300V 108A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS264?
• Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

IXFR32N80Q3

IXYS

MOSFET N-CH 800V 24A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: TO-247-3

封装: TO-247-3

IXFK80N50Q3

IXYS

MOSFET N-CH 500V 80A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

IXFX80N50Q3

IXYS

MOSFET N-CH 500V 80A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3

IXTH3N200P3HV

IXYS

MOSFET N-CH 2000V 3A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2000V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: TO-247-3

IXFX32N80Q3

IXYS

MOSFET N-CH 800V 32A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3