页 17 - IXYS 产品 - 晶体管 - FET，MOSFET - 单

IXTQ60N10T

IXYS

MOSFET N-CH 100V 60A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: -

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MOSFET (Metal Oxide)

100 V

60A (Tc)

10V

4.5V @ 50µA

49 nC @ 10 V

2650 pF @ 25 V

±30V

-

176W (Tc)

18mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXTA6N100D2-TRL

IXYS

MOSFET N-CH 1000V 6A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1000 V

6A (Tj)

0V

4.5V @ 250µA

95 nC @ 5 V

2650 pF @ 25 V

±20V

Depletion Mode

300W (Tc)

2.2Ohm @ 3A, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTV230N85TS

IXYS

MOSFET N-CH PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTA60N10T-TRL

IXYS

MOSFET N-CH 100V 60A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存9,597

MOSFET (Metal Oxide)

100 V

60A (Tc)

10V

4.5V @ 50µA

49 nC @ 10 V

2650 pF @ 25 V

±20V

-

176W (Tc)

18mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH26N65X2

IXYS

IXFH26N65X2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封装: -

库存864

MOSFET (Metal Oxide)

650 V

26A (Tc)

10V

5V @ 2.5mA

45 nC @ 10 V

2450 pF @ 25 V

±30V

-

460W (Tc)

130mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXFH26N65X3

IXYS

DISCRETE MOSFET 26A 650V X3 TO24

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTA08N100D2-TRL

IXYS

MOSFET N-CH 1000V 800MA TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1000 V

800mA (Tj)

0V

4V @ 25µA

14.6 nC @ 5 V

325 pF @ 25 V

±20V

Depletion Mode

60W (Tc)

21Ohm @ 400mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH140N20X3

IXYS

MOSFET N-CH 200V 140A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

库存78

MOSFET (Metal Oxide)

200 V

140A (Tc)

10V

4.5V @ 4mA

127 nC @ 10 V

7660 pF @ 25 V

±20V

-

520W (Tc)

9.6mOhm @ 70A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFA10N60P-TRL

IXYS

MOSFET N-CH 600V 10A D2-PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,100

-

IXTA4N80P-TRL

IXYS

MOSFET N-CH 800V 3.6A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

800 V

3.6A (Tc)

10V

5.5V @ 100µA

14.2 nC @ 10 V

750 pF @ 25 V

±30V

-

100W (Tc)

3.4Ohm @ 1.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH34N60X2A

IXYS

MOSFET N-CH 22A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

600 V

34A (Tc)

10V

5V @ 2.5mA

56 nC @ 10 V

3230 pF @ 25 V

±30V

-

540W (Tc)

100mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXTP130N15X4

IXYS

MOSFET N-CH 150V 130A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: -

库存123

MOSFET (Metal Oxide)

150 V

130A (Tc)

10V

4.5V @ 250µA

87 nC @ 10 V

4770 pF @ 25 V

±20V

-

400W (Tc)

8.5mOhm @ 70A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IXFN75N120SK

IXYS

SIC AND MULTICHIP DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
Vgs (Max): +15V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

75A (Tc)

15V

3.6V @ 18mA

158 nC @ 15 V

4820 pF @ 1000 V

+15V, -4V

-

27mOhm @ 50A, 15V

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTP60N020T

IXYS

MOSFET N-CH TO220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

MKE38P600LB-TUB

IXYS

MOSFET N-CH 600V 50A SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: ISOPLUS-SMPD™.B
Package / Case: 9-SMD Module

封装: -

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MOSFET (Metal Oxide)

600 V

50A (Tc)

-

Surface Mount

ISOPLUS-SMPD™.B

9-SMD Module

IXFH240N15X3

IXYS

MOSFET N-CH 150V 240A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

150 V

240A (Tc)

10V

4.5V @ 4mA

150 nC @ 10 V

9580 pF @ 25 V

±20V

-

780W (Tc)

5.4mOhm @ 120A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTP16N50PM

IXYS

MOSFET N-CH TO220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTH20N65X2

IXYS

MOSFET N-CH 650V 20A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

库存717

MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4.5V @ 250µA

27 nC @ 10 V

1450 pF @ 25 V

±30V

-

290W (Tc)

185mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTA1N120P-TRL

IXYS

MOSFET N-CH 1200V 1A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1200 V

1A (Tc)

10V

4.5V @ 50µA

17.6 nC @ 10 V

550 pF @ 25 V

±20V

-

63W (Tc)

20Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTU4N60P

IXYS

MOSFET N-CH TO251

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTP60N10TM

IXYS

MOSFET N-CH TO220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTY01N100-TRL

IXYS

MOSFET N-CH 1000V 100MA TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

1000 V

100mA (Tc)

10V

4.5V @ 25µA

6.9 nC @ 10 V

54 pF @ 25 V

±20V

-

25W (Tc)

80Ohm @ 50mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

LSIC1MO120T0160-TU

IXYS

1200V/160MOHM SIC MOSFET TO-263-

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

22A (Tc)

-

Surface Mount

TO-263-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IXFK52N100X

IXYS

MOSFET N-CH 1000V 52A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

1000 V

52A (Tc)

10V

6V @ 4mA

245 nC @ 10 V

6725 pF @ 25 V

±30V

-

1250W (Tc)

125mOhm @ 26A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXFT60N20F

IXYS

MOSFET N-CH 60A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IXTY1N120PTRL

IXYS

MOSFET N-CH 1200V 1A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

1200 V

1A (Tc)

10V

4.5V @ 50µA

17.6 nC @ 10 V

445 pF @ 25 V

±30V

-

63W (Tc)

20Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXTA05N100HV-TRL

IXYS

MOSFET N-CH 1000V 750MA TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1000 V

750mA (Tc)

10V

4.5V @ 250µA

7.8 nC @ 10 V

260 pF @ 25 V

±30V

-

40W (Tc)

17Ohm @ 375mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTH05N250P3HV

IXYS

MOSFET N-CH 2200V 600MA TO247HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 110Ohm @ 250mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

2500 V

500mA (Tc)

10V

4V @ 250µA

10.5 nC @ 10 V

303 pF @ 25 V

±20V

-

104W (Tc)

110Ohm @ 250mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTY32P05T-TRL

IXYS

MOSFET P-CH 50V 32A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

MOSFET (Metal Oxide)

50 V

32A (Tc)

10V

4.5V @ 250µA

46 nC @ 10 V

1975 pF @ 25 V

±15V

-

83W (Tc)

39mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFH46N30T

IXYS

MOSFET N-CH 300V 46A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

300 V

46A (Tc)

10V

5V @ 4mA

86 nC @ 10 V

4770 pF @ 25 V

±20V

-

460W (Tc)

80mOhm @ 23A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTQ60N10T	IXYS	MOSFET N-CH 100V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	4.5V @ 50µA	49 nC @ 10 V	2650 pF @ 25 V	±30V	-	176W (Tc)	18mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA6N100D2-TRL	IXYS	MOSFET N-CH 1000V 6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	6A (Tj)	0V	4.5V @ 250µA	95 nC @ 5 V	2650 pF @ 25 V	±20V	Depletion Mode	300W (Tc)	2.2Ohm @ 3A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTV230N85TS	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA60N10T-TRL	IXYS	MOSFET N-CH 100V 60A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存9,597	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	4.5V @ 50µA	49 nC @ 10 V	2650 pF @ 25 V	±20V	-	176W (Tc)	18mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH26N65X2	IXYS	IXFH26N65X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	封装: -	库存864	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	5V @ 2.5mA	45 nC @ 10 V	2450 pF @ 25 V	±30V	-	460W (Tc)	130mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH26N65X3	IXYS	DISCRETE MOSFET 26A 650V X3 TO24 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA08N100D2-TRL	IXYS	MOSFET N-CH 1000V 800MA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	800mA (Tj)	0V	4V @ 25µA	14.6 nC @ 5 V	325 pF @ 25 V	±20V	Depletion Mode	60W (Tc)	21Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH140N20X3	IXYS	MOSFET N-CH 200V 140A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	库存78	MOSFET (Metal Oxide)	200 V	140A (Tc)	10V	4.5V @ 4mA	127 nC @ 10 V	7660 pF @ 25 V	±20V	-	520W (Tc)	9.6mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA10N60P-TRL	IXYS	MOSFET N-CH 600V 10A D2-PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,100	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA4N80P-TRL	IXYS	MOSFET N-CH 800V 3.6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	800 V	3.6A (Tc)	10V	5.5V @ 100µA	14.2 nC @ 10 V	750 pF @ 25 V	±30V	-	100W (Tc)	3.4Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH34N60X2A	IXYS	MOSFET N-CH 22A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	5V @ 2.5mA	56 nC @ 10 V	3230 pF @ 25 V	±30V	-	540W (Tc)	100mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXTP130N15X4	IXYS	MOSFET N-CH 150V 130A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: -	库存123	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 250µA	87 nC @ 10 V	4770 pF @ 25 V	±20V	-	400W (Tc)	8.5mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFN75N120SK	IXYS	SIC AND MULTICHIP DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	75A (Tc)	15V	3.6V @ 18mA	158 nC @ 15 V	4820 pF @ 1000 V	+15V, -4V	-	-	27mOhm @ 50A, 15V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTP60N020T	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MKE38P600LB-TUB	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD™.B Package / Case: 9-SMD Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	ISOPLUS-SMPD™.B	9-SMD Module
IXFH240N15X3	IXYS	MOSFET N-CH 150V 240A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	150 V	240A (Tc)	10V	4.5V @ 4mA	150 nC @ 10 V	9580 pF @ 25 V	±20V	-	780W (Tc)	5.4mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTP16N50PM	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH20N65X2	IXYS	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	库存717	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4.5V @ 250µA	27 nC @ 10 V	1450 pF @ 25 V	±30V	-	290W (Tc)	185mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA1N120P-TRL	IXYS	MOSFET N-CH 1200V 1A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	1A (Tc)	10V	4.5V @ 50µA	17.6 nC @ 10 V	550 pF @ 25 V	±20V	-	63W (Tc)	20Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTU4N60P	IXYS	MOSFET N-CH TO251 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP60N10TM	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY01N100-TRL	IXYS	MOSFET N-CH 1000V 100MA TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	100mA (Tc)	10V	4.5V @ 25µA	6.9 nC @ 10 V	54 pF @ 25 V	±20V	-	25W (Tc)	80Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
LSIC1MO120T0160-TU	IXYS	1200V/160MOHM SIC MOSFET TO-263- FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封装: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	22A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IXFK52N100X	IXYS	MOSFET N-CH 1000V 52A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	52A (Tc)	10V	6V @ 4mA	245 nC @ 10 V	6725 pF @ 25 V	±30V	-	1250W (Tc)	125mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFT60N20F	IXYS	MOSFET N-CH 60A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY1N120PTRL	IXYS	MOSFET N-CH 1200V 1A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	1A (Tc)	10V	4.5V @ 50µA	17.6 nC @ 10 V	445 pF @ 25 V	±30V	-	63W (Tc)	20Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTA05N100HV-TRL	IXYS	MOSFET N-CH 1000V 750MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	750mA (Tc)	10V	4.5V @ 250µA	7.8 nC @ 10 V	260 pF @ 25 V	±30V	-	40W (Tc)	17Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTH05N250P3HV	IXYS	MOSFET N-CH 2200V 600MA TO247HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 110Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	500mA (Tc)	10V	4V @ 250µA	10.5 nC @ 10 V	303 pF @ 25 V	±20V	-	104W (Tc)	110Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTY32P05T-TRL	IXYS	MOSFET P-CH 50V 32A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	50 V	32A (Tc)	10V	4.5V @ 250µA	46 nC @ 10 V	1975 pF @ 25 V	±15V	-	83W (Tc)	39mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFH46N30T	IXYS	MOSFET N-CH 300V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	300 V	46A (Tc)	10V	5V @ 4mA	86 nC @ 10 V	4770 pF @ 25 V	±20V	-	460W (Tc)	80mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3